Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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JANTX1N6622UDIODE GEN PURP 600V 1.2A D-5A Microchip Technology |
2,888 |
|
- |
- | SQ-MELF, A | Bulk | Active | Standard | 600 V | 1.2A | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 500 nA @ 600 V | - | Military | MIL-PRF-19500/585 | Surface Mount | D-5A | -65°C ~ 150°C |
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JANTXV1N3595UR-1/TRDIODE GP 125V 150MA DO213AA Microchip Technology |
2,830 |
|
- |
- | DO-213AA | Tape & Reel (TR) | Active | Standard | 125 V | 150mA | 920 mV @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 3 µs | 2 nA @ 125 V | - | Military | MIL-PRF-19500/241 | Surface Mount | DO-213AA | -65°C ~ 175°C |
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UES1105E3DIODE GEN PURP 300V 1A A AXIAL Microchip Technology |
3,778 |
|
- |
- | Axial | Bulk | Active | Standard | 300 V | 1A | 1.25 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 300 V | - | - | - | Through Hole | A, Axial | -55°C ~ 150°C |
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UES1105E3/TRDIODE GEN PURP 300V 1A A AXIAL Microchip Technology |
2,327 |
|
- |
- | Axial | Tape & Reel (TR) | Active | Standard | 300 V | 1A | 1.25 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 300 V | - | - | - | Through Hole | A, Axial | -55°C ~ 150°C |
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1N6540DIODE RECT ULT FAST REC A-PKG Microchip Technology |
4,302 |
|
- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
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1N6625E3/TRDIODE GEN PURP 1.1KV 1A A AXIAL Microchip Technology |
3,530 |
|
- |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 1100 V | 1A | 1.95 V @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 80 ns | 1 µA @ 1100 V | - | - | - | Through Hole | A, Axial | -65°C ~ 150°C |
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JANTX1N6622US/TRDIODE GEN PURP 660V 2A D-5A Microchip Technology |
2,743 |
|
- |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 660 V | 2A | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 500 nA @ 660 V | 10pF @ 10V, 1MHz | Military | MIL-PRF-19500/585 | Surface Mount | D-5A | -65°C ~ 150°C |
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JANTX1N6622U/TRDIODE GP 660V 1.2A A SQ-MELF Microchip Technology |
4,125 |
|
- |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 660 V | 1.2A | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 500 nA @ 660 V | - | Military | MIL-PRF-19500/585 | Surface Mount | A, SQ-MELF | -65°C ~ 150°C |
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1N5821USDIODE SCHOTTKY 30V 3A B SQ-MELF Microchip Technology |
4,605 |
|
![]() Tabla de datos |
- | SQ-MELF, B | Bulk | Discontinued at Digi-Key | Schottky | 30 V | 3A | 500 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 30 V | - | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 125°C |
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JANTXV1N5622USDIODE GEN PURP 1KV 1A D-5A Microchip Technology |
4,318 |
|
![]() Tabla de datos |
- | SQ-MELF, A | Bulk | Active | Standard | 1000 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 1000 V | - | Military | MIL-PRF-19500/427 | Surface Mount | D-5A | -65°C ~ 200°C |