Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
1N5820US/TRDIODE SCHOTTKY 20V 3A B SQ-MELF Microchip Technology |
2,813 |
|
- |
- | SQ-MELF, B | Tape & Reel (TR) | Active | Schottky | 20 V | 3A | 500 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 20 V | - | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 125°C |
![]() |
JANTX1N6621/TRDIODE GEN PURP 440V 2A Microchip Technology |
4,660 |
|
- |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 440 V | 2A | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 500 nA @ 440 V | 10pF @ 10V, 1MHz | Military | MIL-PRF-19500/585 | Through Hole | A, Axial | -65°C ~ 150°C |
![]() |
JANTXV1N5550USDIODE GEN PURP 200V 5A D-5B Microchip Technology |
3,860 |
|
![]() Tabla de datos |
- | SQ-MELF, E | Bulk | Active | Standard | 200 V | 5A | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 200 V | - | Military | MIL-PRF-19500/420 | Surface Mount | D-5B | -65°C ~ 175°C |
![]() |
JANTXV1N5419USDIODE GEN PURP 500V 3A D-5B Microchip Technology |
3,321 |
|
![]() Tabla de datos |
- | SQ-MELF, E | Bulk | Active | Standard | 500 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 1 µA @ 500 V | - | Military | MIL-PRF-19500/411 | Surface Mount | D-5B | -65°C ~ 175°C |
![]() |
JANTXV1N5551USDIODE GEN PURP 400V 3A D-5B Microchip Technology |
3,025 |
|
![]() Tabla de datos |
- | SQ-MELF, E | Bulk | Active | Standard | 400 V | 3A | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 400 V | - | Military | MIL-PRF-19500/420 | Surface Mount | D-5B | -65°C ~ 175°C |
![]() |
UES1103E3/TRDIODE GEN PURP 150V 2.5A A AXIAL Microchip Technology |
3,163 |
|
- |
- | Axial | Tape & Reel (TR) | Active | Standard | 150 V | 2.5A | 975 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 2 µA @ 150 V | - | - | - | Through Hole | A, Axial | 175°C |
![]() |
1N6662USRECTIFIER DIODE Microchip Technology |
3,216 |
|
![]() Tabla de datos |
- | SQ-MELF, A | Bulk | Active | Standard | 400 V | 500mA | 1 V @ 400 mA | Standard Recovery >500ns, > 200mA (Io) | - | 50 nA @ 400 V | - | - | - | Surface Mount | A, SQ-MELF | -65°C ~ 175°C |
![]() |
JANHCE1N5804DIODE GEN PURP 100V 1A DIE Microchip Technology |
2,854 |
|
- |
- | Die | Bulk | Active | Standard | 100 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 100 V | 25pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Surface Mount | Die | -65°C ~ 175°C |
![]() |
JANHCE1N5802DIODE GEN PURP 50V 1A DIE Microchip Technology |
2,626 |
|
- |
- | Die | Bulk | Active | Standard | 50 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 50 V | 25pF @ 10V, 1MHz | Military | MIL-PRF-19500/561 | Surface Mount | Die | -65°C ~ 175°C |
![]() |
JANTX1N6621US/TRDIODE GEN PURP 440V 2A D-5A Microchip Technology |
2,568 |
|
- |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 440 V | 2A | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 500 nA @ 440 V | 10pF @ 10V, 1MHz | Military | MIL-PRF-19500/585 | Surface Mount | D-5A | -65°C ~ 150°C |