Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1N6074USDIODE GEN PURP 100V 3A D-5A Microchip Technology |
3,855 |
|
![]() Tabla de datos |
- | SQ-MELF, A | Bulk | Active | Standard | 100 V | 3A | 2.04 V @ 9.4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 1 µA @ 100 V | - | - | - | Surface Mount | D-5A | -65°C ~ 155°C |
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JAN1N5807URSDIODE GEN PURP 50V 3A B SQ-MELF Microchip Technology |
3,848 |
|
![]() Tabla de datos |
- | SQ-MELF, B | Bulk | Active | Standard | 50 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 50 V | 60pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
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JAN1N5809URSDIODE GEN PURP 100V 3A B SQ-MELF Microchip Technology |
2,676 |
|
![]() Tabla de datos |
- | SQ-MELF, B | Bulk | Active | Standard | 100 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | 60pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
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JAN1N5811URSDIODE GEN PURP 150V 3A B SQ-MELF Microchip Technology |
2,836 |
|
![]() Tabla de datos |
- | SQ-MELF, B | Bulk | Active | Standard | 150 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | 60pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
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JANTX1N5802US/TRDIODE GEN PURP 50V 1A D-5A Microchip Technology |
4,153 |
|
![]() Tabla de datos |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 50 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 50 V | 25pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Surface Mount | D-5A | -65°C ~ 175°C |
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1N6642UBDIODE GEN PURP UB Microchip Technology |
3,816 |
|
- |
- | 4-SMD, No Lead | Bulk | Active | Standard | - | - | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 5 ns | - | 5pF @ 0V, 1MHz | - | - | Surface Mount | UB | - |
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JANTX1N6628/TRDIODE GEN PURP 660V 1.75A Microchip Technology |
4,316 |
|
- |
- | E, Axial | Tape & Reel (TR) | Active | Standard | 660 V | 1.75A | 1.35 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 2 µA @ 660 V | 40pF @ 10V, 1MHz | Military | MIL-PRF-19500/590 | Through Hole | - | -65°C ~ 150°C |
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JANTX1N6628DIODE GEN PURP 660V 1.75A AXIAL Microchip Technology |
2,129 |
|
![]() Tabla de datos |
- | E, Axial | Bulk | Active | Standard | 660 V | 1.75A | 1.35 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 2 µA @ 660 V | 40pF @ 10V, 1MHz | Military | MIL-PRF-19500/590 | Through Hole | - | -65°C ~ 150°C |
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JANTXV1N5554US/TRDIODE GEN PURP 1KV 3A D-5B Microchip Technology |
4,703 |
|
- |
- | SQ-MELF, E | Tape & Reel (TR) | Active | Standard | 1000 V | 3A | 1.3 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 1 V | - | Military | MIL-PRF-19500/420 | Surface Mount | D-5B | -65°C ~ 175°C |
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JANTXV1N5553US/TRDIODE GEN PURP 800V 3A B SQ-MELF Microchip Technology |
3,122 |
|
- |
- | SQ-MELF, B | Tape & Reel (TR) | Active | Standard | 800 V | 3A | 1.3 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | - | - | Military | MIL-PRF-19500/420 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |