Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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JANTXV1N5807DIODE GEN PURP 50V 3A AXIAL Microchip Technology |
4,805 |
|
![]() Tabla de datos |
- | B, Axial | Bulk | Active | Standard | 50 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 50 V | 65pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Through Hole | B, Axial | -65°C ~ 175°C |
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JANTXV1N5809DIODE GEN PURP 100V 3A AXIAL Microchip Technology |
4,178 |
|
![]() Tabla de datos |
- | B, Axial | Bulk | Active | Standard | 100 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | 65pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Through Hole | B, Axial | -65°C ~ 175°C |
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JANTXV1N5811DIODE GEN PURP 150V 3A AXIAL Microchip Technology |
4,477 |
|
![]() Tabla de datos |
- | B, Axial | Bulk | Active | Standard | 150 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | 65pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Through Hole | B, Axial | -65°C ~ 175°C |
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JANTXV1N5620USDIODE GEN PURP 800V 1A A SQ-MELF Microchip Technology |
4,847 |
|
- |
- | SQ-MELF, A | Bulk | Active | Standard | 800 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | - | - | Military | MIL-PRF-19500/427 | Surface Mount | A, SQ-MELF | -65°C ~ 200°C |
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JANTXV1N5621USDIODE GEN PURP 800V 1A D-5A Microchip Technology |
2,804 |
|
![]() Tabla de datos |
- | SQ-MELF, A | Bulk | Discontinued at Digi-Key | Standard | 800 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 500 nA @ 800 V | 20pF @ 12V, 1MHz | Military | MIL-PRF-19500/429 | Surface Mount | D-5A | -65°C ~ 175°C |
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JANTXV1N5620US/TRDIODE GEN PURP 800V 1A A SQ-MELF Microchip Technology |
3,481 |
|
- |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 800 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | - | - | Military | MIL-PRF-19500/427 | Surface Mount | A, SQ-MELF | -65°C ~ 200°C |
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JANTX1N6626/TRDIODE GEN PURP 220V 1.75A Microchip Technology |
3,992 |
|
- |
- | E, Axial | Tape & Reel (TR) | Active | Standard | 220 V | 1.75A | 1.35 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 2 µA @ 220 V | 40pF @ 10V, 1MHz | Military | MIL-PRF-19500/590 | Through Hole | - | -65°C ~ 150°C |
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JANTXV1N5811/TRDIODE GEN PURP 150V 3A Microchip Technology |
2,613 |
|
![]() Tabla de datos |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 150 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | 65pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Through Hole | B, Axial | -65°C ~ 175°C |
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JANTXV1N5809/TRDIODE GEN PURP 100V 3A Microchip Technology |
3,512 |
|
![]() Tabla de datos |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 100 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | 65pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Through Hole | B, Axial | -65°C ~ 175°C |
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JANTXV1N5807/TRDIODE GEN PURP 50V 3A Microchip Technology |
4,721 |
|
![]() Tabla de datos |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 50 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 50 V | 65pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Through Hole | B, Axial | -65°C ~ 175°C |