Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Configuración del diodo | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) (por diodo) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Temperatura de funcionamiento - Unión | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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MSRTA200160DDIODE MODULE GEN PURP 1600V 200A GeneSiC Semiconductor |
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- | Module | Bulk | Active | 1 Pair Series Connection | Standard | 1600 V | 200A | 1.1 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1600 V | -55°C ~ 150°C | - | - | Chassis Mount | - |
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MSRTA200140DDIODE MODULE GEN PURP 1400V 200A GeneSiC Semiconductor |
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- | Module | Bulk | Active | 1 Pair Series Connection | Standard | 1400 V | 200A | 1.1 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1400 V | -55°C ~ 150°C | - | - | Chassis Mount | - |
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MSRTA200160ADDIODE MOD GP 1600V 200A 3TOWER GeneSiC Semiconductor |
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- | Three Tower | Bulk | Active | 1 Pair Series Connection | Standard | 1600 V | 200A | 1.1 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1600 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURTA200120DIODE MOD GP 1200V 100A 3TOWER GeneSiC Semiconductor |
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- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 1200 V | 100A | 2.6 V @ 100 A | Standard Recovery >500ns, > 200mA (Io) | - | 25 µA @ 1200 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURTA200120RDIODE MOD GP 1200V 100A 3TOWER GeneSiC Semiconductor |
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- | Three Tower | Bulk | Active | 1 Pair Common Anode | Standard | 1200 V | 100A | 2.6 V @ 100 A | Standard Recovery >500ns, > 200mA (Io) | - | 25 µA @ 1200 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURTA20020DIODE MODULE GP 200V 100A 3TOWER GeneSiC Semiconductor |
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- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 200 V | 100A | 1.3 V @ 100 A | Standard Recovery >500ns, > 200mA (Io) | - | 25 µA @ 200 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURTA20020RDIODE MODULE GP 200V 100A 3TOWER GeneSiC Semiconductor |
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- | Three Tower | Bulk | Active | 1 Pair Common Anode | Standard | 200 V | 100A | 1.3 V @ 100 A | Standard Recovery >500ns, > 200mA (Io) | - | 25 µA @ 200 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURTA20040DIODE MODULE GP 400V 100A 3TOWER GeneSiC Semiconductor |
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- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 400 V | 100A | 1.3 V @ 100 A | Standard Recovery >500ns, > 200mA (Io) | - | 25 µA @ 400 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURTA20040RDIODE MODULE GP 400V 100A 3TOWER GeneSiC Semiconductor |
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- | Three Tower | Bulk | Active | 1 Pair Common Anode | Standard | 400 V | 100A | 1.3 V @ 100 A | Standard Recovery >500ns, > 200mA (Io) | - | 25 µA @ 400 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURTA20060DIODE MODULE GP 600V 100A 3TOWER GeneSiC Semiconductor |
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- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 600 V | 100A | 1.7 V @ 100 A | Standard Recovery >500ns, > 200mA (Io) | - | 25 µA @ 600 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |