Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Configuración del diodo | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) (por diodo) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Temperatura de funcionamiento - Unión | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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MURTA40060DIODE MODULE GP 600V 200A 3TOWER GeneSiC Semiconductor |
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- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 600 V | 200A | 1.7 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | 25 µA @ 600 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURTA40060RDIODE MODULE GP 600V 200A 3TOWER GeneSiC Semiconductor |
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![]() Tabla de datos |
- | Three Tower | Bulk | Active | 1 Pair Common Anode | Standard | 600 V | 200A | 1.7 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | 25 µA @ 600 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURTA50020DIODE MODULE GP 200V 250A 3TOWER GeneSiC Semiconductor |
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- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 200 V | 250A | 1.3 V @ 250 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURTA50020RDIODE MODULE GP 200V 250A 3TOWER GeneSiC Semiconductor |
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![]() Tabla de datos |
- | Three Tower | Bulk | Active | 1 Pair Common Anode | Standard | 200 V | 250A | 1.3 V @ 250 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURTA50040DIODE MODULE GP 400V 250A 3TOWER GeneSiC Semiconductor |
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![]() Tabla de datos |
- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 400 V | 250A | 1.5 V @ 250 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURTA50040RDIODE MODULE GP 400V 250A 3TOWER GeneSiC Semiconductor |
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![]() Tabla de datos |
- | Three Tower | Bulk | Active | 1 Pair Common Anode | Standard | 400 V | 250A | 1.5 V @ 250 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURTA50060DIODE MODULE GP 600V 250A 3TOWER GeneSiC Semiconductor |
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![]() Tabla de datos |
- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 600 V | 250A | 1.7 V @ 250 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURTA50060RDIODE MODULE GP 600V 250A 3TOWER GeneSiC Semiconductor |
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![]() Tabla de datos |
- | Three Tower | Bulk | Active | 1 Pair Common Anode | Standard | 600 V | 250A | 1.7 V @ 250 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURTA400120DIODE MOD GP 1200V 200A 3TOWER GeneSiC Semiconductor |
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![]() Tabla de datos |
- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 1200 V | 200A | 2.6 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | 25 µA @ 1200 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
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MURTA400120RDIODE MOD GP 1200V 200A 3TOWER GeneSiC Semiconductor |
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![]() Tabla de datos |
- | Three Tower | Bulk | Active | 1 Pair Common Anode | Standard | 1200 V | 200A | 2.6 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | 25 µA @ 1200 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |