Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Configuración del diodo | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) (por diodo) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Temperatura de funcionamiento - Unión | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
MUR40060CTRDIODE MODULE GP 600V 200A 2TOWER GeneSiC Semiconductor |
0 |
|
![]() Tabla de datos |
- | Twin Tower | Bulk | Active | 1 Pair Common Anode | Standard | 600 V | 200A | 1.3 V @ 125 A | Fast Recovery =< 500ns, > 200mA (Io) | 180 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower |
![]() |
MURT40010DIODE MODULE GP 100V 200A 3TOWER GeneSiC Semiconductor |
0 |
|
![]() Tabla de datos |
- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 100 V | 200A | 1.3 V @ 200 A | Fast Recovery =< 500ns, > 200mA (Io) | 125 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
![]() |
MURT40010RDIODE MODULE GP 100V 200A 3TOWER GeneSiC Semiconductor |
0 |
|
![]() Tabla de datos |
- | Three Tower | Bulk | Active | 1 Pair Common Anode | Standard | 100 V | 200A | 1.3 V @ 200 A | Fast Recovery =< 500ns, > 200mA (Io) | 125 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
![]() |
MURT40020DIODE MODULE GP 200V 200A 3TOWER GeneSiC Semiconductor |
0 |
|
![]() Tabla de datos |
- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 200 V | 200A | 1.3 V @ 200 A | Fast Recovery =< 500ns, > 200mA (Io) | 125 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
![]() |
MURT40020RDIODE MODULE GP 200V 200A 3TOWER GeneSiC Semiconductor |
0 |
|
![]() Tabla de datos |
- | Three Tower | Bulk | Active | 1 Pair Common Anode | Standard | 200 V | 200A | 1.3 V @ 200 A | Fast Recovery =< 500ns, > 200mA (Io) | 125 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
![]() |
GB2X100MPS12-227DIODE MOD SIC 1200V 185A SOT-227 GeneSiC Semiconductor |
0 |
|
![]() Tabla de datos |
SiC Schottky MPS™ | SOT-227-4, miniBLOC | Tube | Obsolete | 2 Independent | SiC (Silicon Carbide) Schottky | 1200 V | 185A (DC) | 1.8 V @ 100 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 1200 V | -55°C ~ 175°C | - | - | Chassis Mount | SOT-227 |
![]() |
MBRT600100DIODE MOD SCHOT 100V 300A 3TOWER GeneSiC Semiconductor |
0 |
|
![]() Tabla de datos |
- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Schottky | 100 V | 300A | 880 mV @ 300 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 20 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
![]() |
MBRT600100RDIODE MOD SCHOT 100V 300A 3TOWER GeneSiC Semiconductor |
0 |
|
![]() Tabla de datos |
- | Three Tower | Bulk | Active | 1 Pair Common Anode | Schottky | 100 V | 300A | 880 mV @ 300 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 20 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
![]() |
MBRT60020DIODE MOD SCHOTT 20V 300A 3TOWER GeneSiC Semiconductor |
0 |
|
![]() Tabla de datos |
- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Schottky | 20 V | 300A | 750 mV @ 300 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 20 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
![]() |
MBRT60020RDIODE MOD SCHOTT 20V 300A 3TOWER GeneSiC Semiconductor |
0 |
|
![]() Tabla de datos |
- | Three Tower | Bulk | Active | 1 Pair Common Anode | Schottky | 20 V | 300A | 750 mV @ 300 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 20 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |