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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SQS166ELNW-T1_GE3AUTOMOTIVE N-CHANNEL 60V (D-S) |
2,202 |
|
Tabla de datos |
TrenchFET® Gen IV | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 71A (Tc) | 4.5V, 10V | 8.9mOhm @ 10A, 10V | 2.5V @ 250µA | 32 nC @ 10 V | ±20V | 1790 pF @ 25 V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount, Wettable Flank | PowerPAK® 1212-8SLW |
|
|
SQ2361CEES-T1_GE3MOSFET P-CH 60V 2.8A SOT23-3 |
4,322 |
|
Tabla de datos |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 2.8A (Tc) | 4.5V, 10V | 170mOhm @ 2.4A, 10V | 2.5V @ 250µA | 15 nC @ 10 V | ±20V | 620 pF @ 30 V | - | 2W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | SOT-23-3 (TO-236) |
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|
IRFR420PBF-BE3N-CHANNEL 500V |
4,002 |
|
Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 2.4A (Tc) | 10V | 3Ohm @ 1.4A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±20V | 360 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
|
MCAC30P03-TPMOSFET P-CH 30 30A DFN5060 |
2,042 |
|
- |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 16mOhm @ 20A, 10V | 2V @ 250µA | 28 nC @ 10 V | ±20V | 1385 pF @ 15 V | - | 41.7W (Tj) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DFN5060 |
|
|
SQ2310CES-T1_GE3MOSFET N-CH 20V 6A TO236 |
2,206 |
|
- |
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 6A (Tc) | 1.8V, 4.5V | 30mOhm @ 5A, 4.5V | 1V @ 250µA | 8.5 nC @ 4.5 V | ±8V | 590 pF @ 10 V | - | 2W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | SOT-23-3 (TO-236) |
|
|
PJQ44611AP-AU_R2_002A160V P-Channel Enhance Mode MSFT |
2,907 |
|
- |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
PJD13N10A_L2_00001100V N-CHANNEL MOSFET |
2,913 |
|
Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 2.9A (Ta), 13A (Tc) | 4.5V, 10V | 115mOhm @ 6.5A, 10V | 2.5V @ 250µA | 20 nC @ 10 V | ±20V | 1413 pF @ 25 V | - | 2W (Ta), 41W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
PJL9433A_R2_0000160V P-CHANNEL ENHANCEMENT MODE M |
3,848 |
|
Tabla de datos |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 3.2A (Ta) | 4.5V, 10V | 110mOhm @ 3.2A, 10V | 2.5V @ 250µA | 10 nC @ 10 V | ±20V | 785 pF @ 30 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
|
|
SQJ118EP-T1_GE3AUTOMOTIVE N-CHANNEL 100V (D-S) |
2,497 |
|
Tabla de datos |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 38A (Tc) | 10V | 19.7mOhm @ 15A, 10V | 3.5V @ 250µA | 47 nC @ 10 V | ±20V | 2930 pF @ 25 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
IRF820ALPBFMOSFET N-CH 500V 2.5A I2PAK |
4,943 |
|
Tabla de datos |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 2.5A (Tc) | 10V | 3Ohm @ 1.5A, 10V | 4.5V @ 250µA | 17 nC @ 10 V | ±30V | 340 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | I2PAK |
|
|
SIR5810DP-T1-RE3N-CHANNEL 80 V (D-S) MOSFET 150C |
3,223 |
|
Tabla de datos |
TrenchFET® Gen V | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 15.5A (Ta), 53.3A (Tc) | 7.5V, 10V | 10mOhm @ 10A, 10V | 4V @ 250µA | 18.5 nC @ 10 V | ±20V | 900 pF @ 40 V | - | 3W (Ta), 56.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
|
SQS110ENW-T1_GE3AUTOMOTIVE N-CHANNEL 100V (D-S) |
2,287 |
|
Tabla de datos |
TrenchFET® Gen IV | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 57A (Tc) | 10V | 13.2mOhm @ 10A, 10V | 4V @ 250µA | 51 nC @ 10 V | ±20V | 3449 pF @ 25 V | - | 119W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount, Wettable Flank | PowerPAK® 1212-8SLW |
|
|
PJQ44609AP-AU_R2_002A160V P-Channel Enhance Mode MSFT |
2,768 |
|
- |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
SISS5810DN-T1-GE3N-CHANNEL 80 V (D-S) MOSFET 150C |
4,979 |
|
Tabla de datos |
TrenchFET® Gen V | PowerPAK® 1212-8S | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 13.9A (Ta), 51A (Tc) | 7.5V, 10V | 10mOhm @ 10A, 10V | 4V @ 250µA | 18.5 nC @ 10 V | ±20V | 900 pF @ 40 V | - | 3.9W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8S |
|
|
SIR5208DP-T1-RE3N-CHANNEL 20 V (D-S) MOSFET 150C |
2,589 |
|
Tabla de datos |
TrenchFET® Gen V | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 48A (Ta), 165A (Tc) | 2.5V, 8V | 1.3mOhm @ 10A, 8V | 1.3V @ 250µA | 68 nC @ 10 V | +8V, -7V | 4100 pF @ 10 V | - | 4.8W (Ta), 56.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SIHFZ48S-GE3MOSFET N-CH 60V 50A D2PAK |
2,009 |
|
Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 10V | 18mOhm @ 43A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 3.7W (Ta), 190W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
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PJQ44607AP-AU_R2_002A160V P-Channel Enhance Mode MSFT |
3,280 |
|
- |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
SISS26LDN-T1-UE3N-CHANNEL 60 V (D-S) 150C MOSFET |
2,371 |
|
Tabla de datos |
TrenchFET® Gen IV | PowerPAK® 1212-8S | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 23.7A (Ta), 81.2A (Tc) | 4.5V, 10V | 4.3mOhm @ 15A, 10V | 2.5V @ 250µA | 48 nC @ 10 V | ±20V | 1980 pF @ 30 V | - | 4.8W (Ta), 57W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8S |
|
|
SIRA60DDP-T1-UE3N-CHANNEL 30 V (D-S) 150C MOSFET |
3,018 |
|
Tabla de datos |
TrenchFET® Gen IV | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 65A (Ta), 241A (Tc) | 4.5V, 10V | 0.9mOhm @ 20A, 10V | 2.2V @ 250µA | 125 nC @ 10 V | +20V, -16V | 7975 pF @ 15 V | - | 5.7W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
PJQ4441P_R2_0000140V P-CHANNEL ENHANCEMENT MODE M |
2,974 |
|
Tabla de datos |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 8.5A (Ta), 44A (Tc) | 4.5V, 10V | 17mOhm @ 10A, 10V | 2.5V @ 250µA | 19 nC @ 4.5 V | ±20V | 2030 pF @ 25 V | - | 2W (Ta), 59.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DFN3333-8 |
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