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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXFK64N60Q3MOSFET N-CH 600V 64A TO264AA |
3 |
|
Tabla de datos |
HiPerFET™, Q3 Class | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 64A (Tc) | 10V | 95mOhm @ 32A, 10V | 6.5V @ 4mA | 190 nC @ 10 V | ±30V | 9930 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264AA (IXFK) |
|
MMIX1F230N20TMOSFET N-CH 200V 168A 24SMPD |
2,504 |
|
Tabla de datos |
GigaMOS™, HiPerFET™, TrenchT2™ | 24-PowerSMD, 21 Leads | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 168A (Tc) | 10V | 8.3mOhm @ 60A, 10V | 5V @ 8mA | 378 nC @ 10 V | ±20V | 28000 pF @ 25 V | - | 600W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 24-SMPD |
|
|
IXFL82N60PMOSFET N-CH 600V 55A ISOPLUS264 |
3,468 |
|
Tabla de datos |
HiPerFET™, Polar | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 55A (Tc) | 10V | 78mOhm @ 41A, 10V | 5V @ 8mA | 240 nC @ 10 V | ±30V | 23000 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS264™ |
|
MMIX1T600N04T2MOSFET N-CH 40V 600A 24SMPD |
4,827 |
|
Tabla de datos |
FRFET®, SupreMOS® | 24-PowerSMD, 21 Leads | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 600A (Tc) | 10V | 1.3mOhm @ 100A, 10V | 3.5V @ 250µA | 590 nC @ 10 V | ±20V | 40000 pF @ 25 V | - | 830W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 24-SMPD |
|
IXFN52N100XMOSFET N-CH 1000V 44A SOT227B |
2,729 |
|
Tabla de datos |
HiPerFET™, Ultra X | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 44A (Tc) | 10V | 125mOhm @ 26A, 10V | 6V @ 4mA | 245 nC @ 10 V | ±30V | 6725 pF @ 25 V | - | 830W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
|
IXTK8N150LMOSFET N-CH 1500V 8A TO264 |
3,165 |
|
Tabla de datos |
Linear | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1500 V | 8A (Tc) | 20V | 3.6Ohm @ 4A, 20V | 8V @ 250µA | 250 nC @ 15 V | ±30V | 8000 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 (IXTK) |
|
MMIX1T132N50P3MOSFET N-CH 500V 63A POLAR3 |
2,637 |
|
Tabla de datos |
Polar™ | 24-PowerSMD, 22 Leads | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 63A (Tc) | 10V | 43mOhm @ 66A, 10V | 5V @ 8mA | 267 nC @ 10 V | ±30V | 18600 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Polar3™ |
|
|
IXFN44N100PMOSFET N-CH 1000V 37A SOT-227B |
4,693 |
|
Tabla de datos |
HiPerFET™, Polar | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 37A (Tc) | 10V | 220mOhm @ 22A, 10V | 6.5V @ 1mA | 305 nC @ 10 V | ±30V | 19000 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
STE88N65M5MOSFET N-CH 650V 88A ISOTOP |
4,549 |
|
Tabla de datos |
MDmesh™ V | ISOTOP | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 88A (Tc) | 10V | 29mOhm @ 42A, 10V | 5V @ 250µA | 204 nC @ 10 V | ±25V | 8825 pF @ 100 V | - | 494W (Tc) | 150°C (TJ) | - | - | Chassis Mount | ISOTOP |
|
|
STE40NC60MOSFET N-CH 600V 40A ISOTOP |
3,667 |
|
Tabla de datos |
PowerMESH™ II | ISOTOP | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 40A (Tc) | 10V | 130mOhm @ 20A, 10V | 4V @ 250µA | 430 nC @ 10 V | ±30V | 11100 pF @ 25 V | - | 460W (Tc) | 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
|
|
MMIX1T550N055T2MOSFET N-CH 55V 550A 24SMPD |
4 |
|
Tabla de datos |
FRFET®, SupreMOS® | 24-PowerSMD, 21 Leads | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 550A (Tc) | 10V | 1.3mOhm @ 100A, 10V | 3.8V @ 250µA | 595 nC @ 10 V | ±20V | 40000 pF @ 25 V | - | 830W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 24-SMPD |
|
|
IXFN100N50Q3MOSFET N-CH 500V 82A SOT227B |
3 |
|
Tabla de datos |
HiPerFET™, Q3 Class | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 82A (Tc) | 10V | 49mOhm @ 50A, 10V | 6.5V @ 8mA | 255 nC @ 10 V | ±30V | 13800 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
|
IXFN44N100Q3MOSFET N-CH 1000V 38A SOT227B |
2,688 |
|
Tabla de datos |
HiPerFET™, Q3 Class | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 38A (Tc) | 10V | 220mOhm @ 22A, 10V | 6.5V @ 8mA | 264 nC @ 10 V | ±30V | 13600 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
|
IXTN120P20TMOSFET P-CH 200V 106A SOT227B |
3,443 |
|
Tabla de datos |
TrenchP™ | SOT-227-4, miniBLOC | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 106A (Tc) | 10V | 30mOhm @ 60A, 10V | 4.5V @ 250µA | 740 nC @ 10 V | ±15V | 73000 pF @ 25 V | - | 830W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
|
IXKN45N80CMOSFET N-CH 800V 44A SOT-227B |
4,147 |
|
Tabla de datos |
CoolMOS™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 44A (Tc) | 10V | 74mOhm @ 44A, 10V | 3.9V @ 4mA | 360 nC @ 10 V | ±20V | - | - | 380W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
|
IXFN110N85XMOSFET N-CH 850V 110A SOT227B |
2,408 |
|
Tabla de datos |
HiPerFET™, Ultra X | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 850 V | 110A (Tc) | 10V | 33mOhm @ 55A, 10V | 5.5V @ 8mA | 425 nC @ 10 V | ±30V | 17000 pF @ 25 V | - | 1170W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
|
IXFN74N100XMOSFET N-CH 1000V 74A SOT227B |
3,599 |
|
Tabla de datos |
HiPerFET™, Ultra X | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 74A (Tc) | 10V | 66mOhm @ 37A, 10V | 5.5V @ 8mA | 425 nC @ 10 V | ±30V | 17000 pF @ 25 V | - | 1170W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
|
FBG04N08ASHGAN FET HEMT 40V 8A 4FSMD-A |
2,769 |
|
Tabla de datos |
e-GaN® | 4-SMD, No Lead | Bulk | Active | N-Channel | GaNFET (Gallium Nitride) | 40 V | 8A (Tc) | 5V | 24mOhm @ 8A, 5V | 2.5V @ 2mA | 2.8 nC @ 5 V | +6V, -4V | 312 pF @ 20 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-SMD |
|
|
BSM300C12P3E301SICFET N-CH 1200V 300A MODULE |
4,051 |
|
Tabla de datos |
- | Module | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 300A (Tc) | - | - | 5.6V @ 80mA | - | +22V, -4V | 1500 pF @ 10 V | - | 1360W (Tc) | -40°C ~ 150°C (TJ) | - | - | - | Module |
|
HTNFET-TMOSFET N-CH 55V 4POWER TAB |
3,945 |
|
Tabla de datos |
HTMOS™ | 4-SIP | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | - | 5V | 400mOhm @ 100mA, 5V | 2.4V @ 100µA | 4.3 nC @ 5 V | 10V | 290 pF @ 28 V | - | 50W (Tj) | -55°C ~ 225°C (TJ) | - | - | Through Hole | 4-Power Tab |
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