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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IXFH78N60X3MOSFET ULTRA JCT 600V 78A TO247 |
3,113 |
|
Tabla de datos |
HiPerFET™, Ultra X3 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 78A | 10V | 38mOhm @ 39A, 10V | 5V @ 4mA | 70 nC @ 10 V | ±20V | 4700 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
|
APT77N60BC6MOSFET N-CH 600V 77A TO247 |
3 |
|
Tabla de datos |
CoolMOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 77A (Tc) | 10V | 41mOhm @ 44.4A, 10V | 3.6V @ 2.96mA | 260 nC @ 10 V | ±20V | 13600 pF @ 25 V | - | 481W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
|
SIHG80N60E-GE3MOSFET N-CH 600V 80A TO247AC |
3,100 |
|
Tabla de datos |
E | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 80A (Tc) | 10V | 30mOhm @ 40A, 10V | 4V @ 250µA | 443 nC @ 10 V | ±30V | 6900 pF @ 100 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AC |
|
STW75N65DM6-4N-CHANNEL 650 V, 33 MOHM TYP., 7 |
4,161 |
|
Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 75A (Tc) | 10V | 36mOhm @ 37.5A, 10V | 4.75V @ 250µA | 118 nC @ 10 V | ±25V | 5700 pF @ 100 V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-4 |
|
SCT040H65G3AGAUTOMOTIVE-GRADE SILICON CARBIDE |
3,506 |
|
Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 30A (Tc) | 15V, 18V | 55mOhm @ 20A, 18V | 4.2V @ 1mA | 39.5 nC @ 18 V | +18V, -5V | 920 pF @ 400 V | - | 221W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | H2PAK-7 |
|
IPW65R037C6FKSA1MOSFET N-CH 650V 83.2A TO247-3 |
3,045 |
|
Tabla de datos |
CoolMOS™ C6 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 83.2A (Tc) | 10V | 37mOhm @ 33.1A, 10V | 3.5V @ 3.3mA | 330 nC @ 10 V | ±20V | 7240 pF @ 100 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3 |
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|
IXFX180N15PMOSFET N-CH 150V 180A PLUS247-3 |
5 |
|
Tabla de datos |
HiPerFET™, Polar | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 180A (Tc) | 10V | 11mOhm @ 90A, 10V | 5V @ 4mA | 240 nC @ 10 V | ±20V | 7000 pF @ 25 V | - | 830W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PLUS247™-3 |
|
SCT3105KLGC11SICFET N-CH 1200V 24A TO247N |
2,709 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 24A (Tc) | 18V | 137mOhm @ 7.6A, 18V | 5.6V @ 3.81mA | 51 nC @ 18 V | +22V, -4V | 574 pF @ 800 V | - | 134W | 175°C (TJ) | - | - | Through Hole | TO-247N |
|
SCTW35N65G2VSICFET N-CH 650V 45A HIP247 |
2,412 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 45A (Tc) | 18V, 20V | 67mOhm @ 20A, 20V | 5V @ 1mA | 73 nC @ 20 V | +22V, -10V | 1370 pF @ 400 V | - | 240W (Tc) | -55°C ~ 200°C (TJ) | Automotive | AEC-Q101 | Through Hole | HiP247™ |
|
TK62J60W,S1VQMOSFET N-CH 600V 61.8A TO3P |
2 |
|
Tabla de datos |
DTMOSIV | TO-3P-3, SC-65-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 61.8A (Ta) | 10V | 38mOhm @ 30.9A, 10V | 3.7V @ 3.1mA | 180 nC @ 10 V | ±30V | 6500 pF @ 300 V | - | 400W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3P(N) |
|
|
SCTW35N65G2VAGSICFET N-CH 650V 45A HIP247 |
4,932 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 45A (Tc) | 18V, 20V | 67mOhm @ 20A, 20V | 5V @ 1mA | 73 nC @ 20 V | +22V, -10V | 1370 pF @ 400 V | - | 240W (Tc) | -55°C ~ 200°C (TJ) | Automotive | AEC-Q101 | Through Hole | HiP247™ |
|
|
STW40N95DK5MOSFET N-CHANNEL 950V 38A TO247 |
3,422 |
|
Tabla de datos |
MDmesh™ DK5 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 950 V | 38A (Tc) | 10V | 130mOhm @ 19A, 10V | 5V @ 100µA | 100 nC @ 10 V | ±30V | 3480 pF @ 100 V | - | 450W (Tc) | -55°C ~ 150°C | - | - | Through Hole | TO-247 |
|
|
SCTH40N120G2V-7SILICON CARBIDE POWER MOSFET 120 |
3,313 |
|
Tabla de datos |
- | - | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 36A (Tc) | 18V | 100mOhm @ 20A, 18V | 4.9V @ 1mA | 61 nC @ 18 V | +22V, -10V | 1233 pF @ 800 V | - | 238W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | H2PAK-7 |
|
IXFK66N85XMOSFET N-CH 850V 66A TO264 |
4,301 |
|
Tabla de datos |
HiPerFET™, Ultra X | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 850 V | 66A (Tc) | 10V | 65mOhm @ 500mA, 10V | 5.5V @ 8mA | 230 nC @ 10 V | ±30V | 8900 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264AA |
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|
IXTH12N150MOSFET N-CH 1500V 12A TO247 |
3,564 |
|
Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1500 V | 12A (Tc) | 10V | 2Ohm @ 6A, 10V | 4.5V @ 250µA | 106 nC @ 10 V | ±30V | 3720 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 (IXTH) |
|
|
IXFK170N25X3MOSFET N-CH 250V 170A TO264 |
2 |
|
Tabla de datos |
HiPerFET™, Ultra X3 | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 170A (Tc) | 10V | 7.4mOhm @ 85A, 10V | 4.5V @ 4mA | 190 nC @ 10 V | ±20V | 13500 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264AA |
|
|
IXFK20N120PMOSFET N-CH 1200V 20A TO264AA |
3 |
|
Tabla de datos |
HiPerFET™, Polar | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 20A (Tc) | 10V | 570mOhm @ 10A, 10V | 6.5V @ 1mA | 193 nC @ 10 V | ±30V | 11100 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264AA (IXFK) |
|
APT31M100LMOSFET N-CH 1000V 32A TO264 |
2,916 |
|
Tabla de datos |
POWER MOS 8™ | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 32A (Tc) | 10V | 400mOhm @ 16A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | ±30V | 8500 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 |
|
|
SCTH40N120G2V7AGSICFET N-CH 1200V 33A H2PAK-7 |
4,891 |
|
Tabla de datos |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 33A (Tc) | 18V | 105mOhm @ 20A, 18V | 5V @ 1mA | 63 nC @ 18 V | +22V, -10V | 1230 pF @ 800 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | H2PAK-7 |
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|
IXFJ26N50P3MOSFET N-CH 500V 14A TO247 |
19 |
|
Tabla de datos |
HiPerFET™, Polar3™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 14A (Tc) | 10V | 265mOhm @ 13A, 10V | 5V @ 4mA | 42 nC @ 10 V | ±30V | 2220 pF @ 25 V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 (IXTH) |
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