制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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UPA1740TP-E1-AZUPA1740TP-E1-AZ - MOS FIELD EFFE |
155,000 | - |
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- | 8-PowerSOIC (0.173", 4.40mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 7A (Tc) | 10V | 440mOhm @ 3.5A, 10V | 4.5V @ 1mA | 12 nC @ 10 V | ±30V | 420 pF @ 10 V | - | 1W (Ta), 22W (Tc) | 150°C | - | - | Surface Mount | 8-HSOP |
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PSMN4R3-80PS,127NEXPERIA PSMN4R3-80PS - 120A, 80 |
1,756 | - |
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- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 10V | 4.3mOhm @ 25A, 10V | 4V @ 1mA | 111 nC @ 10 V | ±20V | 8161 pF @ 40 V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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AUIRL1404ZMOSFET N-CH 40V 160A TO220 |
10,859 | - |
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HEXFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 4.5V, 10V | 3.1mOhm @ 75A, 10V | 2.7V @ 250µA | 110 nC @ 5 V | ±16V | 5080 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220 |
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AM7482NMOSFET N-CH 80V 18A DFN5X6 |
3,500 | - |
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- | 8-PowerVDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 18A (Ta) | 4.5V, 10V | 11mOhm @ 14.4A, 10V | 1V @ 250µA | 72 nC @ 4.5 V | ±20V | 4021 pF @ 15 V | - | 5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (5x6) |
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BUK7107-55AIE,118NEXPERIA BUK7107 - N-CHANNEL TRE |
2,400 | - |
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TrenchMOS™ | TO-263-5, D2PAK (4 Leads + Tab), TO-263BB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 7mOhm @ 50A, 10V | 4V @ 1mA | 116 nC @ 10 V | ±20V | 4500 pF @ 25 V | Current Sensing | 272W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | D2PAK |
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HUF75542P3POWER FIELD-EFFECT TRANSISTOR, 7 |
1,690 | - |
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UltraFET™ | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 75A (Tc) | 10V | 14mOhm @ 75A, 10V | 4V @ 250µA | 180 nC @ 20 V | ±20V | 2750 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
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FCP11N60NPOWER FIELD-EFFECT TRANSISTOR, 1 |
800 | - |
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SupreMOS™ | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 10.8A (Tc) | 10V | 299mOhm @ 5.4A, 10V | 4V @ 250µA | 35.6 nC @ 10 V | ±30V | 1505 pF @ 100 V | - | 94W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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UPA2702TP-E2-AZUPA2702 - N CHANNEL MOSFET |
5,000 | - |
|
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- | 8-PowerSOIC (0.173", 4.40mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta), 35A (Tc) | 4V, 10V | 9.5mOhm @ 7A, 10V | 2.5V @ 1mA | 9 nC @ 5 V | ±20V | 900 pF @ 10 V | - | 3W (Ta), 22W (Tc) | 150°C | - | - | Surface Mount | 8-HSOP |
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TO220FMD12N65FMOSFET TO-220F N 650V 12A |
6,750 | - |
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TO-220F | - | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 12A (Tc) | 10V | 0.8Ohm @ 6A, 10V | - | 41.9 nC @ 10 V | ±30V | - | - | - | - | - | - | - | - |
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UPA2782GR-E1-AUPA2782GR-E1-A - SWITCHINGN-CHAN |
7,500 | - |
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- | 8-SOIC (0.173", 4.40mm Width) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta) | 4V, 10V | 15mOhm @ 5.5A, 10V | 2.5V @ 1mA | 7.1 nC @ 5 V | ±20V | 660 pF @ 10 V | - | 2W (Ta) | 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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IRFSL7537PBFMOSFET N-CH 60V 173A TO262 |
800 | - |
|
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HEXFET®, StrongIRFET™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 173A (Tc) | 6V, 10V | 3.3mOhm @ 100A, 10V | 3.7V @ 150µA | 210 nC @ 10 V | ±20V | 7020 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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FDA18N50POWER FIELD-EFFECT TRANSISTOR, 1 |
1,564 | - |
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UniFET™ | TO-3P-3, SC-65-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 19A (Tc) | 10V | 265mOhm @ 9.5A, 10V | 5V @ 250µA | 60 nC @ 10 V | ±30V | 2860 pF @ 25 V | - | 239W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3PN |
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BSC0588NSIATMA1BSC0588- N-CHANNEL POWER MOSFET |
215,000 | - |
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- |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRF3703PBFIRF3703 - 12V-300V N-CHANNEL POW |
15,791 | - |
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HEXFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 210A (Tc) | 7V, 10V | 2.8mOhm @ 76A, 10V | 4V @ 250µA | 209 nC @ 10 V | ±20V | 8250 pF @ 25 V | - | 3.8W (Ta), 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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AMIB075N15N3MOSFET N-CH 150V 90A TO-263 |
250 | - |
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 90A (Tc) | 6.5V, 10V | 10mOhm @ 20A, 10V | 2V @ 250µA | 55 nC @ 6.5 V | ±20V | 4329 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 |
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FQP12N60CPOWER FIELD-EFFECT TRANSISTOR, 1 |
4,340 | - |
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QFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 650mOhm @ 6A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±30V | 2290 pF @ 25 V | - | 225W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
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IRF2907ZPBFIRF2907 - 12V-300V N-CHANNEL POW |
18,857 | - |
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* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRFSL7730PBFIRFSL7730 - 12V-300V N-CHANNEL P |
899 | - |
|
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HEXFET®, StrongIRFET™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 195A (Tc) | 6V, 10V | 2.6mOhm @ 100A, 10V | 3.7V @ 250µA | 407 nC @ 10 V | ±20V | 13660 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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AUIRL7736M2TRMOSFET N-CH 40V 179A DIRECTFET |
13,183 | - |
|
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HEXFET® | DirectFET™ Isometric M4 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 179A (Tc) | 4.5V, 10V | 3mOhm @ 67A, 10V | 2.5V @ 150µA | 78 nC @ 4.5 V | ±16V | 5055 pF @ 25 V | - | 2.5W (Ta), 63W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric M4 |
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NP34N055SLE-E1-AYNP34N055 - POWER FIELD-EFFECT TR |
5,000 | - |
|
- |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 34A (Ta) | 4.5V, 10V | 18mOhm @ 17A, 10V | 2.5V @ 250µA | 72 nC @ 10 V | ±20V | 3000 pF @ 25 V | - | 1.2W (Ta), 88W (Tc) | 175°C | - | - | Surface Mount | TO-252 (MP-3ZK) |