制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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CPH6424-TL-ECPH6424 - N-CHANNEL SILICON MOSF |
3,000 | - |
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![]() Tabla de datos |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ECH8607-TL-EN-CHANNEL SILICON MOSFET |
2,801 | - |
|
![]() Tabla de datos |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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G60N10TMOSFET N-CH 100V 60A TO-220 |
5,000 | - |
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TrenchFET® | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | - | 60A (Tc) | 4.5V, 10V | 17mOhm @ 20A, 10V | 2.5V @ 250µA | - | ±20V | - | - | 132W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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G050P03TMOSFET P-CH 30V 85A TO-220 |
2,000 | - |
|
![]() Tabla de datos |
TrenchFET® | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | - | 85A (Tc) | 4.5V, 10V | 5mOhm @ 20A, 10V | 2.5V @ 250µA | - | ±20V | - | - | 100W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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FDD8880_F0541-ELEMENT, N-CHANNEL POWER MOSFE |
13,660 | - |
|
![]() Tabla de datos |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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2N7002-CTMOSFET N-CH 60V 0.6A SOT-23 |
7,880 | - |
|
![]() Tabla de datos |
- | TO-236-3, SC-59, SOT-23-3 | Strip | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 600mA (Ta) | 4.5V, 10V | 3Ohm @ 600mA, 10V | 1V @ 250µA | 4 nC @ 4.5 V | ±20V | 474 pF @ 15 V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23 |
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FDU6N50TUMOSFET N-CH 500V 6A I-PAK |
4,579 | - |
|
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UniFET™ | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 6A (Tc) | 10V | 900mOhm @ 3A, 10V | 5V @ 250µA | 16.6 nC @ 10 V | ±30V | 940 pF @ 25 V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |
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2SK2628LS2SK2628 - N-CHANNEL SILICON MOSF |
3,166 | - |
|
![]() Tabla de datos |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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AM4432NMOSFET N-CH 30V 13.8A SO-8 |
2,500 | - |
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- | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 13.8A (Ta) | 2.5V, 4.5V | 11mOhm @ 16.8A, 4.5V | 1V @ 250µA | 24 nC @ 4.5 V | ±20V | 2047 pF @ 15 V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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AM90N08-04BMOSFET N-CH 80V 90A TO-263 |
2,400 | - |
|
![]() Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 90A (Tc) | 6.5V, 10V | 4.5mOhm @ 20A, 10V | 1V @ 250µA | 167 nC @ 6.5 V | ±20V | 11678 pF @ 15 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 |
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AM20N06-90DMOSFET N-CH 60V 19A TO-252 |
2,000 | - |
|
![]() Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 19A (Ta) | 4.5V, 10V | 94mOhm @ 15.2A, 10V | 1V @ 250µA | 5.1 nC @ 4.5 V | ±20V | 353 pF @ 15 V | - | 50W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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PHB18NQ10T,118MOSFET N-CH 100V 18A D2PAK |
1,966 | - |
|
![]() Tabla de datos |
TrenchMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 18A (Tc) | 10V | 90mOhm @ 9A, 10V | 4V @ 1mA | 21 nC @ 10 V | ±20V | 633 pF @ 25 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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NTMFS4C027NT1G-01NTMFS4C027NT1G-01 |
75,000 | - |
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* | - | Tape & Reel (TR) | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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NTMFS4C808NT1G-01NTMFS4C808NT1G-01 |
34,500 | - |
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- |
- | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Ta) | 4.5V, 10V | 4.8mOhm @ 18A, 10V | 2.1V @ 250µA | 8.4 nC @ 4.5 V | ±20V | 1670 pF @ 15 V | - | 760mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 5-DFN (5x6) (8-SOFL) |
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2SJ356(0)-T1-AY2SJ356 - SIGNAL DEVICE |
16,300 | - |
|
![]() Tabla de datos |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FDMC7672MOSFET N-CH 30V 16.9A/20A 8MLP |
9,009 | - |
|
![]() Tabla de datos |
PowerTrench®, SyncFET™ | 8-PowerWDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 16.9A (Ta), 20A (Tc) | 4.5V, 10V | 5.7mOhm @ 16.9A, 10V | 3V @ 250µA | 57 nC @ 10 V | ±20V | 3890 pF @ 15 V | - | 2.3W (Ta), 33W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-MLP (3.3x3.3) |
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IPL65R1K5C6SE8211ATMA1IPL65R1K5 - 650V AND 700V COOLMO |
7,514 | - |
|
![]() Tabla de datos |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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GT52N10D5MOSFET N-CH 100V 71A DFN5*6-8L |
20,000 | - |
|
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SGT | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 71A (Tc) | 4.5V, 10V | 7.5mOhm @ 50A, 10V | 2.5V @ 250µA | - | ±20V | - | - | 79W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
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PHB29N08T,118NEXPERIA PHB29N08T - 27A, 75V, 0 |
2,600 | - |
|
![]() Tabla de datos |
TrenchMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 27A (Tc) | 11V | 50mOhm @ 14A, 11V | 5V @ 2mA | 19 nC @ 10 V | ±30V | 810 pF @ 25 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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FQN1N60CTA-GPOWER MOSFET, N-CHANNEL, QFET, |
1,454 | - |
|
- |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |