制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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AM4499PMOSFET P-CH 60V 6.8A SOIC-8 |
2,300 | - |
|
![]() Tabla de datos |
- | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 6.8A (Ta) | 4.5V, 10V | 45mOhm @ 5.4A, 10V | 1V @ 250µA | 24 nC @ 4.5 V | ±20V | 1725 pF @ 15 V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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G75P04KMOSFET P-CH 40V 70A TO-252 |
15,000 | - |
|
![]() Tabla de datos |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | - | 70A (Tc) | 10V | 10mOhm @ 10A, 20V | 2.5V @ 250µA | - | ±20V | - | - | 130W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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FDME820NZTSMALL SIGNAL FIELD-EFFECT TRANSI |
9,500 | - |
|
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PowerTrench® | 6-PowerUFDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 9A (Ta) | 1.8V, 4.5V | 18mOhm @ 9A, 4.5V | 1V @ 250µA | 8.5 nC @ 4.5 V | ±12V | 865 pF @ 10 V | - | 2.1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | MicroFet 1.6x1.6 Thin |
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AM2390NMOSFET N-CH 150V 1.9A SOT-23 |
3,000 | - |
|
![]() Tabla de datos |
- | TO-236-3, SC-59, SOT-23-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 1.1A (Ta) | 4.5V, 10V | 700mOhm @ 1.1A, 10V | 1V @ 250µA | 3.5 nC @ 4.5 V | ±20V | 356 pF @ 15 V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23 |
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FDFM2P110MOSFET P-CH 20V 3.5A MICROFET |
2,879 | - |
|
![]() Tabla de datos |
PowerTrench® | 6-WDFN Exposed Pad | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 3.5A (Ta) | 2.5V, 4.5V | 140mOhm @ 3.5A, 4.5V | 1.5V @ 250µA | 4 nC @ 4.5 V | ±12V | 280 pF @ 10 V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | MicroFET 3x3mm |
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FDS6670ASMALL SIGNAL FIELD-EFFECT TRANSI |
2,525 | - |
|
![]() Tabla de datos |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Ta) | 4.5V, 10V | 8mOhm @ 13A, 10V | 3V @ 250µA | 30 nC @ 5 V | ±20V | 2220 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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AM7330NMOSFET N-CH 30V 19A DFN3X3 |
2,000 | - |
|
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* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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2SJ635-TL-E2SJ635 - P-CHANNEL SILICON MOSFE |
1,600 | - |
|
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- | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 12A (Ta) | 4V, 10V | 60mOhm @ 6A, 10V | 2.6V @ 1mA | 45 nC @ 10 V | ±20V | 2200 pF @ 20 V | - | 1W (Ta), 30W (Tc) | 150°C | - | - | Through Hole | TP |
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GT105N10FMOSFET N-CH 100V 33A TO-220F |
60,000 | - |
|
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SGT | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | - | 33A (Tc) | 4.5V, 10V | 10.5mOhm @ 11A, 10V | 2.5V @ 250µA | - | ±20V | - | - | 20.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F |
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NTTFS4C02NTAG-01N-Channel 30 V 170A (Tc) 91W (Tc |
4,416,000 | - |
|
- |
- | - | Tape & Reel (TR) | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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NTMFS4C09NAT1G-01N-Channel 30 V 9A (Ta), 52A (Tc) |
1,447,077 | - |
|
- |
- | - | Tape & Reel (TR) | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FDD8770POWER FIELD-EFFECT TRANSISTOR, 3 |
41,479 | - |
|
![]() Tabla de datos |
PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 35A (Tc) | 4.5V, 10V | 4mOhm @ 35A, 10V | 2.5V @ 250µA | 73 nC @ 10 V | ±20V | 3720 pF @ 13 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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FQU8P10TUPOWER FIELD-EFFECT TRANSISTOR, 6 |
27,370 | - |
|
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QFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 6.6A (Tc) | 10V | 530mOhm @ 3.3A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±30V | 470 pF @ 25 V | - | 2.5W (Ta), 44W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |
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FDS8817NZ-G30V N-CHANNEL POWERTRENCH MOSFET |
25,000 | - |
|
- |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 15A (Ta) | 4.5V, 10V | 7mOhm @ 15A, 10V | 3V @ 250µA | 45 nC @ 10 V | ±20V | 2400 pF @ 15 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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NTMFS4C09NBT1G-01N-Channel 30 V 9A (Ta), 52A (Tc) |
11,970 | - |
|
- |
- | - | Tape & Reel (TR) | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPI45N06S4L08AKSA2OPTLMOS N-CHANNEL POWER MOSFET |
11,000 | - |
|
![]() Tabla de datos |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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PSMN018-100ESFQNEXPERIA PSMN018 - NEXTPOWER 100 |
4,976 | - |
|
![]() Tabla de datos |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 53A (Ta) | 7V, 10V | 18mOhm @ 15A, 10V | 4V @ 1mA | 21.4 nC @ 10 V | ±20V | 1482 pF @ 50 V | - | 111W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | I2PAK |
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GT150N12TMOSFET N-CH 120V 55A TO-220 |
4,000 | - |
|
![]() Tabla de datos |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 55A (Tc) | 10V | 18mOhm @ 20A, 10V | 4.5V @ 250µA | 22 nC @ 10 V | ±20V | 1596 pF @ 60 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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IRLR2905ZTRLPBFMOSFET N-CH 55V 42A DPAK |
1,225 | - |
|
![]() Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | 4.5V, 10V | 13.5mOhm @ 36A, 10V | 3V @ 250µA | 35 nC @ 5 V | ±16V | 1570 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DPAK |
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GT105N10TMOSFET N-CH 100V 55A TO-220 |
10,000 | - |
|
![]() Tabla de datos |
SGT | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | - | 55A (Tc) | 4.5V, 10V | 10.5mOhm @ 35A, 10V | 2.5V @ 250µA | - | ±20V | - | - | 74W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |