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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FDS8449-G40V N-CHANNEL POWERTRENCH MOSFET |
65,000 |
|
- |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 7.6A (Ta) | 4.5V, 10V | 29mOhm @ 7.6A, 10V | 3V @ 250µA | 11 nC @ 5 V | ±20V | 760 pF @ 20 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
|
NTTFS4C08NTAG-01MOSFET N-Channel 30V 9.3A (Ta) 8 |
56,606 |
|
- |
- | - | Tape & Reel (TR) | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
2SK3447TZ-E2SK3447TZ-E - SILICON N CHANNEL |
10,000 |
|
Tabla de datos |
- | TO-226-3, TO-92-3 Long Body | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 1A (Ta) | 4V, 10V | 1.95Ohm @ 500mA, 10V | 2.5V @ 1mA | 4.5 nC @ 10 V | ±20V | 85 pF @ 10 V | - | 900mW (Ta) | 150°C | - | - | Through Hole | TO-92MOD |
|
|
2SJ632-TD-E2SJ632 - P-CHANNEL SILICON MOSFE |
11,431 |
|
Tabla de datos |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
AM7434NMOSFET N-CH 30V 27A DFN5X6 |
4,300 |
|
Tabla de datos |
- | 8-PowerVDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 27A (Ta) | 4.5V, 10V | 4.9mOhm @ 27A, 10V | 1V @ 250µA | 16 nC @ 4.5 V | ±20V | 2031 pF @ 15 V | - | 5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (5x6) |
|
NVD4806NT4G-VF01NVD4806 - SINGLE N-CHANNEL POWER |
2,500 |
|
Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 11.3A (Ta), 79A (Tc) | 4.5V, 11.5V | 6mOhm @ 30A, 11.5V | 2.5V @ 250µA | 37 nC @ 11.5 V | ±20V | 2142 pF @ 12 V | - | 1.4W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | DPAK-3 |
|
|
AM4841P-CTMOSFET P-CH -40V 7.7A SOIC-8 |
2,200 |
|
Tabla de datos |
- | SOIC-8 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 7.7A (Ta) | 4.5V, 10V | 45mOhm @ 4.9A, 4.5V | 1V @ 250µA | 23 nC @ 4.5 V | ±20V | 1826 pF @ 15 V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOIC-8 |
|
FDD8896POWER FIELD-EFFECT TRANSISTOR, 1 |
850,700 |
|
Tabla de datos |
PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 17A (Ta), 94A (Tc) | 4.5V, 10V | 5.7mOhm @ 35A, 10V | 2.5V @ 250µA | 60 nC @ 10 V | ±20V | 2525 pF @ 15 V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
|
NVTFS5C680NLWFTAG-01MOSFET N-CHANNEL 60V 7.82A (TA) |
568,930 |
|
- |
- | 8-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 7.82A (Ta), 20A (Tc) | 4.5V, 10V | 26.5mOhm @ 10A, 10V | 2.2V @ 13µA | 6 nC @ 10 V | ±20V | 327 pF @ 25 V | - | 3W (Ta), 20W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-WDFN (3.3x3.3) |
|
FQPF3N25MOSFET N-CH 250V 2.3A TO220F |
204,011 |
|
Tabla de datos |
QFET® | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 2.3A (Tc) | 10V | 2.2Ohm @ 1.15A, 10V | 5V @ 250µA | 5.2 nC @ 10 V | ±30V | 170 pF @ 25 V | - | 27W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
|
FDD8447LPOWER FIELD-EFFECT TRANSISTOR, 2 |
18,050 |
|
Tabla de datos |
PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 15.2A (Ta), 50A (Tc) | 4.5V, 10V | 8.5mOhm @ 14A, 10V | 3V @ 250µA | 52 nC @ 10 V | ±20V | 1970 pF @ 20 V | - | 3.1W (Ta), 44W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
FQU5N60CTUPOWER FIELD-EFFECT TRANSISTOR, 2 |
4,040 |
|
Tabla de datos |
QFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 2.8A (Tc) | 10V | 2.5Ohm @ 1.4A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±30V | 670 pF @ 25 V | - | 2.5W (Ta), 49W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |
|
|
G020N03TMOSFET N-CH 30V 140A TO-220 |
2,000 |
|
Tabla de datos |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 140A (Tc) | 4.5V, 10V | 2.3mOhm @ 50A, 10V | 2V @ 250µA | 110 nC @ 10 V | ±20V | 6005 pF @ 15 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
|
|
FQB27N25TM-F085P250V, 26A, 108M, D2PAKN-CHANNEL |
1,600 |
|
- |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 25.5A (Tc) | 10V | 131mOhm @ 25.5A, 10V | 5V @ 250µA | 49 nC @ 10 V | ±30V | 1330 pF @ 25 V | - | 417W (Tj) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
|
FDD8880-SN00319FDD8880 - 35A, 30V, N-CHANNEL PO |
305,603 |
|
Tabla de datos |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
BUK7675-55A,118NEXPERIA BUK7675-55A - POWER FIE |
75,680 |
|
Tabla de datos |
TrenchMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 20.3A (Tc) | 10V | 75mOhm @ 10A, 10V | 4V @ 1mA | - | ±20V | 483 pF @ 25 V | - | 62W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | D2PAK |
|
|
BUK6610-75C,118NEXPERIA BUK6610 - N-CHANNEL TRE |
7,474 |
|
Tabla de datos |
TrenchMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 78A (Tc) | 10V | 10mOhm @ 25A, 10V | 2.8V @ 1mA | 81 nC @ 10 V | ±16V | 5251 pF @ 25 V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | D2PAK |
|
|
BUK6610-75C,118NEXPERIA BUK6610 - N-CHANNEL TRE |
7,200 |
|
Tabla de datos |
TrenchMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 78A (Tc) | 10V | 10mOhm @ 25A, 10V | 2.8V @ 1mA | 81 nC @ 10 V | ±16V | 5251 pF @ 25 V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | D2PAK |
|
|
GT013N04D5MOSFET N-CH 40V 195A 96W 1.7m(ma |
5,000 |
|
Tabla de datos |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 1.7mOhm @ 30A, 10V | 4V @ 250µA | 50 nC @ 10 V | ±20V | 3927 pF @ 20 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
|
|
GT750P10MMOSFET P-CH 100V 24A TO-263 |
3,200 |
|
Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 24A (Tc) | 4.5V, 10V | 65mOhm @ 20A, 10V | 3V @ 250µA | 40 nC @ 10 V | ±20V | 1902 pF @ 50 V | - | 79W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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