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FET, MOSFET
| 制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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全部重置
应用所有
结果:
| Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT20M22B2VRGMOSFET N-CH 200V 100A T-MAX Microsemi Corporation |
2,403 | - |
|
Tabla de datos |
POWER MOS V® | TO-247-3 Variant | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 100A (Tc) | 10V | 22mOhm @ 500mA, 10V | 4V @ 2.5mA | 435 nC @ 10 V | ±30V | 10200 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
|
APT70SM70BSICFET N-CH 700V 65A TO247 Microsemi Corporation |
3,228 | - |
|
- |
- | TO-247-3 | Bulk | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 700 V | 65A (Tc) | 20V | 70mOhm @ 32.5A, 20V | 2.5V @ 1mA | 125 nC @ 20 V | +25V, -10V | - | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 [B] |
|
APT53N60SC6MOSFET N-CH 600V 53A D3PAK Microsemi Corporation |
2,270 | - |
|
- |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 53A (Tc) | 10V | 70mOhm @ 25.8A, 10V | 3.5V @ 1.72mA | 154 nC @ 10 V | ±20V | 4020 pF @ 25 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
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APT10M09B2VFRGMOSFET N-CH 100V 100A T-MAX Microsemi Corporation |
4,524 | - |
|
Tabla de datos |
POWER MOS V® | TO-247-3 Variant | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 10V | 9mOhm @ 50A, 10V | 4V @ 2.5mA | 350 nC @ 10 V | ±30V | 9875 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
|
APT70SM70SSICFET N-CH 700V 65A D3PAK Microsemi Corporation |
2,122 | - |
|
- |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Bulk | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 700 V | 65A (Tc) | 20V | 70mOhm @ 32.5A, 20V | 2.5V @ 1mA | 125 nC @ 20 V | +25V, -10V | - | - | 220W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D3PAK |
|
APT36N90BC3GMOSFET N-CH 900V 36A TO247 Microsemi Corporation |
4,294 | - |
|
- |
CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 36A (Tc) | 10V | 120mOhm @ 18A, 10V | 3.5V @ 2.9mA | 252 nC @ 10 V | ±20V | 7463 pF @ 25 V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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APT20M22B2VFRGMOSFET N-CH 200V 100A T-MAX Microsemi Corporation |
2,909 | - |
|
Tabla de datos |
POWER MOS V® | TO-247-3 Variant | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 100A (Tc) | 10V | 22mOhm @ 500mA, 10V | 4V @ 2.5mA | 435 nC @ 10 V | ±30V | 10200 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
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APT50M80B2VRGMOSFET N-CH 500V 58A T-MAX Microsemi Corporation |
2,875 | - |
|
- |
POWER MOS V® | TO-247-3 Variant | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 58A (Tc) | 10V | 80mOhm @ 29A, 10V | 4V @ 2.5mA | 423 nC @ 10 V | - | 8797 pF @ 25 V | - | - | - | - | - | Through Hole | T-MAX™ [B2] |
|
APT40M70LVFRGMOSFET N-CH 400V 57A TO264 Microsemi Corporation |
4,222 | - |
|
- |
POWER MOS V® | TO-264-3, TO-264AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 57A (Tc) | 10V | 70mOhm @ 500mA, 10V | 4V @ 2.5mA | 495 nC @ 10 V | ±30V | 8890 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
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APT40SM120BSICFET N-CH 1200V 41A TO247 Microsemi Corporation |
4,216 | - |
|
- |
- | TO-247-3 | Bulk | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 41A (Tc) | 20V | 100mOhm @ 20A, 20V | 3V @ 1mA (Typ) | 130 nC @ 20 V | +25V, -10V | 2560 pF @ 1000 V | - | 273W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
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