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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FDW264PMOSFET P-CH 20V 9.7A 8TSSOP Fairchild Semiconductor |
1,494 |
|
Tabla de datos |
- | 8-TSSOP (0.173", 4.40mm Width) | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 9.7A (Ta) | 2.5V, 4.5V | 10mOhm @ 9.7A, 4.5V | 1.5V @ 250µA | 135 nC @ 5 V | ±12V | 7225 pF @ 10 V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-TSSOP |
|
FQB46N15TMN-CHANNEL POWER MOSFET Fairchild Semiconductor |
570 |
|
Tabla de datos |
QFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 45.6A (Tc) | 10V | 42mOhm @ 22.8A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±25V | 3250 pF @ 25 V | - | 3.75W (Ta), 210W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
FQPF32N12V2MOSFET N-CH 120V 32A TO220F Fairchild Semiconductor |
83,103 |
|
Tabla de datos |
QFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 120 V | 32A (Tc) | 10V | 50mOhm @ 16A, 10V | 4V @ 250µA | 53 nC @ 10 V | ±30V | 1860 pF @ 25 V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220F-3 |
|
FQA10N80MOSFET N-CH 800V 9.8A TO3P Fairchild Semiconductor |
9,066 |
|
Tabla de datos |
QFET® | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 9.8A (Tc) | 10V | 1.05Ohm @ 4.9A, 10V | 5V @ 250µA | 71 nC @ 10 V | ±30V | 2700 pF @ 25 V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3P |
|
FQB7N65CTMMOSFET N-CH 650V 7A D2PAK Fairchild Semiconductor |
7,686 |
|
Tabla de datos |
QFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 7A (Tc) | 10V | 1.4Ohm @ 3.5A, 10V | 4V @ 250µA | 36 nC @ 10 V | ±30V | 1245 pF @ 25 V | - | 173W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
FDU8770MOSFET N-CH 25V 35A IPAK Fairchild Semiconductor |
7,050 |
|
Tabla de datos |
PowerTrench® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 35A (Tc) | 4.5V, 10V | 4mOhm @ 35A, 10V | 2.5V @ 250µA | 73 nC @ 10 V | ±20V | 3720 pF @ 13 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
|
|
FDB2570MOSFET N-CH 150V 22A TO263AB Fairchild Semiconductor |
4,529 |
|
Tabla de datos |
PowerTrench® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 22A (Ta) | 6V, 10V | 80mOhm @ 11A, 10V | 4V @ 250µA | 56 nC @ 10 V | ±20V | 1911 pF @ 75 V | - | 93W (Tc) | -65°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
HRF3205MOSFET N-CH 55V 100A TO220-3 Fairchild Semiconductor |
80,660 |
|
Tabla de datos |
- | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 100A (Tc) | - | 8mOhm @ 59A, 10V | 4V @ 250µA | 170 nC @ 10 V | ±20V | 4000 pF @ 25 V | - | 175W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
|
|
ISL9N304AS3STN-CHANNEL POWER MOSFET Fairchild Semiconductor |
3,200 |
|
Tabla de datos |
UltraFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 75A (Tc) | 4.5V, 10V | 4.5mOhm @ 75A, 10V | 3V @ 250µA | 105 nC @ 10 V | ±20V | 4075 pF @ 15 V | - | 145W (Ta) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263AB |
|
FQA8N80N-CHANNEL POWER MOSFET Fairchild Semiconductor |
72,211 |
|
Tabla de datos |
QFET® | TO-3P-3, SC-65-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 8.4A (Tc) | 10V | 1.2Ohm @ 4.2A, 10V | 5V @ 250µA | 57 nC @ 10 V | ±30V | 2350 pF @ 25 V | - | 220W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3P |
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