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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FQB6N60TMMOSFET N-CH 600V 6.2A D2PAK Fairchild Semiconductor |
18,992 |
|
Tabla de datos |
QFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.2A (Tc) | 10V | 1.5Ohm @ 3.1A, 10V | 5V @ 250µA | 25 nC @ 10 V | ±30V | 1000 pF @ 25 V | - | 3.13W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
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HUFA75639S3ST56A, 100V, 0.025OHM, N-CHANNEL, Fairchild Semiconductor |
1,559 |
|
Tabla de datos |
UltraFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 56A (Tc) | 10V | 25mOhm @ 56A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±20V | 2000 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263AB (D2PAK) |
|
HUF75637S3STMOSFET N-CH 100V 44A D2PAK Fairchild Semiconductor |
1,429 |
|
Tabla de datos |
UltraFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 44A (Tc) | 10V | 30mOhm @ 44A, 10V | 4V @ 250µA | 108 nC @ 20 V | ±20V | 1700 pF @ 25 V | - | 155W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
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HUF75639S3SMOSFET N-CH 100V 56A D2PAK Fairchild Semiconductor |
20,586 |
|
Tabla de datos |
UltraFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 56A (Tc) | 10V | 25mOhm @ 56A, 10V | 4V @ 250µA | 130 nC @ 20 V | ±20V | 2000 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
FDMS8570SDC28A, 25V, 0.0028OHM, N-CHANNEL, Fairchild Semiconductor |
8,053 |
|
Tabla de datos |
PowerTrench®, SyncFET™ | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 28A (Ta), 60A (Tc) | 4.5V, 10V | 2.8mOhm @ 28A, 10V | 2.2V @ 1mA | 42 nC @ 10 V | ±12V | 2825 pF @ 13 V | Schottky Diode (Body) | 3.3W (Ta), 59W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Dual Cool™56 |
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FCPF7N60NTPOWER FIELD-EFFECT TRANSISTOR, 6 Fairchild Semiconductor |
4,369 |
|
Tabla de datos |
SupreMOS™ | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.8A (Tc) | 10V | 520mOhm @ 3.4A, 10V | 4V @ 250µA | 35.6 nC @ 10 V | ±30V | 960 pF @ 100 V | - | 30.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
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HUF75344A3MOSFET N-CH 55V 75A TO3P Fairchild Semiconductor |
616 |
|
Tabla de datos |
UltraFET™ | TO-3P-3, SC-65-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 8mOhm @ 75A, 10V | 4V @ 250µA | 208 nC @ 20 V | ±20V | 4855 pF @ 25 V | - | 288.5W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-3P |
|
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FQB25N33TMMOSFET N-CH 330V 25A D2PAK Fairchild Semiconductor |
15,900 |
|
Tabla de datos |
QFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 330 V | 25A (Tc) | 10V | 230mOhm @ 12.5A, 10V | 5V @ 250µA | 75 nC @ 15 V | ±30V | 2010 pF @ 25 V | - | 3.1W (Ta), 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
FDMS0308CSMOSFET N-CH 30V 22A 8PQFN Fairchild Semiconductor |
9,000 |
|
Tabla de datos |
- | 8-PowerTDFN | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 22A (Ta) | - | 3mOhm @ 21A, 10V | 3V @ 1mA | 66 nC @ 10 V | - | 4225 pF @ 15 V | - | 2.5W (Ta), 65W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
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RFG40N10MOSFET N-CH 100V 40A TO247-3 Fairchild Semiconductor |
1,560 |
|
Tabla de datos |
- | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 40A (Tc) | 10V | 40mOhm @ 40A, 10V | 4V @ 250µA | 300 nC @ 20 V | ±20V | - | - | 160W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
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