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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FQD4N50TMMOSFET N-CH 500V 2.6A DPAK Fairchild Semiconductor |
3,035 |
|
Tabla de datos |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 2.6A (Tc) | 10V | 2.7Ohm @ 1.3A, 10V | 5V @ 250µA | 13 nC @ 10 V | ±30V | 460 pF @ 25 V | - | 2.5W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
IRL620AN-CHANNEL POWER MOSFET Fairchild Semiconductor |
1,890 |
|
Tabla de datos |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 5A (Tc) | 5V | 800mOhm @ 2.5A, 5V | 2V @ 250µA | 15 nC @ 5 V | ±20V | 430 pF @ 25 V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
|
HUFA76619D3STMOSFET N-CH 100V 18A TO252AA Fairchild Semiconductor |
1,688 |
|
Tabla de datos |
UltraFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 18A (Tc) | 4.5V, 10V | 85mOhm @ 18A, 10V | 3V @ 250µA | 29 nC @ 10 V | ±16V | 767 pF @ 25 V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
FDG330PMOSFET P-CH 12V 2A SC88 Fairchild Semiconductor |
219,496 |
|
Tabla de datos |
PowerTrench® | 6-TSSOP, SC-88, SOT-363 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 2A (Ta) | - | 110mOhm @ 2A, 4.5V | 1.5V @ 250µA | 7 nC @ 4.5 V | ±8V | 477 pF @ 6 V | - | 480mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SC-88 (SC-70-6) |
|
NDH832PMOSFET P-CH 20V 4.2A SUPERSOT8 Fairchild Semiconductor |
73,243 |
|
Tabla de datos |
- | 8-TSOP (0.130", 3.30mm Width) | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 4.2A (Ta) | 2.7V, 4.5V | 60mOhm @ 4.2A, 4.5V | 1V @ 250µA | 30 nC @ 4.5 V | -8V | 1000 pF @ 10 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SuperSOT™-8 |
|
|
IRFW740BTMN-CHANNEL POWER MOSFET Fairchild Semiconductor |
70,400 |
|
Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 10A (Tc) | 10V | 540mOhm @ 5A, 10V | 4V @ 250µA | 53 nC @ 10 V | ±30V | 1800 pF @ 25 V | - | 3.13W (Ta), 134W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D2PAK |
|
HUFA75309T3STMOSFET N-CH 55V 3A SOT223-4 Fairchild Semiconductor |
34,459 |
|
Tabla de datos |
UltraFET™ | TO-261-4, TO-261AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 3A (Ta) | 10V | 70mOhm @ 3A, 10V | 4V @ 250µA | 23 nC @ 20 V | ±20V | 352 pF @ 25 V | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223-4 |
|
|
ISL9N306AS3STN-CHANNEL POWER MOSFET Fairchild Semiconductor |
33,931 |
|
Tabla de datos |
UltraFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 75A (Tc) | 4.5V, 10V | 6mOhm @ 75A, 10V | 3V @ 250µA | 90 nC @ 10 V | ±20V | 3400 pF @ 15 V | - | 125W (Ta) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263AB |
|
|
IRFW644BTMN-CHANNEL POWER MOSFET Fairchild Semiconductor |
19,077 |
|
Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 14A (Tc) | 10V | 280mOhm @ 7A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±30V | 1600 pF @ 25 V | - | 3.13W (Ta), 139W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
|
SSP2N60AN-CHANNEL POWER MOSFET Fairchild Semiconductor |
9,000 |
|
Tabla de datos |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 2A (Tc) | 10V | 5Ohm @ 1A, 10V | 4V @ 250µA | 21 nC @ 10 V | ±30V | 410 pF @ 25 V | - | 54W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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