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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FQP13N06MOSFET N-CH 60V 13A TO220-3 Fairchild Semiconductor |
36,013 |
|
Tabla de datos |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 13A (Tc) | 10V | 135mOhm @ 6.5A, 10V | 4V @ 250µA | 7.5 nC @ 10 V | ±25V | 310 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
|
FDMA0104TRANS MOSFET N-CH 20V 9.4A 6PIN Fairchild Semiconductor |
11,154 |
|
Tabla de datos |
PowerTrench® | 6-WDFN Exposed Pad | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 9.4A (Ta) | - | 14.5mOhm @ 9.4A, 4.5V | 1V @ 250µA | 17.5 nC @ 4.5 V | - | 1680 pF @ 10 V | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-MicroFET (2x2) |
|
|
FQP4N20MOSFET N-CH 200V 3.6A TO220-3 Fairchild Semiconductor |
10,753 |
|
Tabla de datos |
QFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 3.6A (Tc) | 10V | 1.4Ohm @ 1.8A, 10V | 5V @ 250µA | 6.5 nC @ 10 V | ±30V | 220 pF @ 25 V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-3 |
|
FQB9N08TMMOSFET N-CH 80V 9.3A D2PAK Fairchild Semiconductor |
7,169 |
|
Tabla de datos |
QFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 9.3A (Tc) | 10V | 210mOhm @ 4.65A, 10V | 4V @ 250µA | 7.7 nC @ 10 V | ±25V | 250 pF @ 25 V | - | 3.75W (Ta), 40W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
SFU9230BTUP-CHANNEL POWER MOSFET Fairchild Semiconductor |
5,040 |
|
Tabla de datos |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 5.4A (Tc) | 10V | 800mOhm @ 2.7A, 10V | 4V @ 250µA | 45 nC @ 10 V | ±30V | 1000 pF @ 25 V | - | 2.5W (Ta), 49W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |
|
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FQI4N20TUMOSFET N-CH 200V 3.6A I2PAK Fairchild Semiconductor |
5,000 |
|
Tabla de datos |
QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 3.6A (Tc) | 10V | 1.4Ohm @ 1.8A, 10V | 5V @ 250µA | 6.5 nC @ 10 V | ±30V | 220 pF @ 25 V | - | 3.13W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262 (I2PAK) |
|
FQD1N60TMMOSFET N-CH 600V 1A DPAK Fairchild Semiconductor |
4,980 |
|
Tabla de datos |
QFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 1A (Tc) | 10V | 11.5Ohm @ 500mA, 10V | 5V @ 250µA | 6 nC @ 10 V | ±30V | 150 pF @ 25 V | - | 2.5W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
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FQI5N20TUMOSFET N-CH 200V 4.5A I2PAK Fairchild Semiconductor |
4,195 |
|
Tabla de datos |
QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 4.5A (Tc) | 10V | 1.2Ohm @ 2.25A, 10V | 5V @ 250µA | 7.5 nC @ 10 V | ±30V | 270 pF @ 25 V | - | 3.13W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262 (I2PAK) |
|
|
FQI3N25TUMOSFET N-CH 250V 2.8A I2PAK Fairchild Semiconductor |
3,648 |
|
Tabla de datos |
QFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 2.8A (Tc) | 10V | 2.2Ohm @ 1.4A, 10V | 5V @ 250µA | 5.2 nC @ 10 V | ±30V | 170 pF @ 25 V | - | 3.13W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262 (I2PAK) |
|
IRF610BN-CHANNEL POWER MOSFET Fairchild Semiconductor |
3,625 |
|
Tabla de datos |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 3.3A (Tc) | 10V | 1.5Ohm @ 1.65A, 10V | 4V @ 250µA | 9.3 nC @ 10 V | ±30V | 225 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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