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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFR110ATMN-CHANNEL POWER MOSFET Fairchild Semiconductor |
4,197 |
|
Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 4.7A (Ta) | 10V | 400mOhm @ 2.35A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 240 pF @ 25 V | - | 2.5W (Ta), 20W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
|
|
SFR2955TFP-CHANNEL POWER MOSFET Fairchild Semiconductor |
2,000 |
|
Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 7.6A (Tc) | 10V | 300mOhm @ 3.8A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±20V | 600 pF @ 25 V | - | 2.5W (Ta), 32W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
FDFMA3P029ZMOSFET P-CH 30V 3.3A 6MICROFET Fairchild Semiconductor |
1,964 |
|
Tabla de datos |
PowerTrench® | 6-WDFN Exposed Pad | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 3.3A (Ta) | - | 87mOhm @ 3.3A, 10V | 3V @ 250µA | 10 nC @ 10 V | - | 435 pF @ 15 V | Schottky Diode (Isolated) | 1.4W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-MLP (2x2) |
|
|
IRFW820BTMN-CHANNEL POWER MOSFET Fairchild Semiconductor |
1,574 |
|
Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 2.5A (Tc) | 10V | 2.6Ohm @ 1.25A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±30V | 610 pF @ 25 V | - | 3.13W (Ta), 49W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
SI4835DYP-CHANNEL MOSFET Fairchild Semiconductor |
1,298 |
|
Tabla de datos |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 8.8A (Ta) | 4.5V, 10V | 20mOhm @ 8.8A, 10V | 3V @ 250µA | 27 nC @ 10 V | ±25V | 1680 pF @ 15 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
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HUFA76409D3SMOSFET N-CH 60V 18A TO252AA Fairchild Semiconductor |
1,222 |
|
Tabla de datos |
UltraFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 18A (Tc) | 4.5V, 10V | 63mOhm @ 18A, 10V | 3V @ 250µA | 15 nC @ 10 V | ±16V | 485 pF @ 25 V | - | 49W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
|
FDMS7698POWER FIELD-EFFECT TRANSISTOR, 1 Fairchild Semiconductor |
7,000 |
|
Tabla de datos |
PowerTrench® | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 13.5A (Ta), 22A (Tc) | 4.5V, 10V | 10mOhm @ 13.5A, 10V | 3V @ 250µA | 24 nC @ 10 V | ±20V | 1605 pF @ 15 V | - | 2.5W (Ta), 29W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
|
FDS6690A-NBNP006SINGLE N-CHANNEL, LOGIC LEVEL, P Fairchild Semiconductor |
5,311 |
|
Tabla de datos |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta) | 4.5V, 10V | 12.5mOhm @ 11A, 10V | 3V @ 250µA | 16 nC @ 5 V | ±20V | 1205 pF @ 15 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
FDFS2P753ZMOSFET P-CH 30V 3A 8SOIC Fairchild Semiconductor |
389,380 |
|
Tabla de datos |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 3A (Ta) | - | 115mOhm @ 3A, 10V | 3V @ 250µA | 9.3 nC @ 10 V | ±25V | 455 pF @ 10 V | Schottky Diode (Isolated) | 1.6W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
ISL9N312AD3N-CHANNEL POWER MOSFET Fairchild Semiconductor |
209,433 |
|
Tabla de datos |
UltraFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 12mOhm @ 50A, 10V | 3V @ 250µA | 38 nC @ 10 V | ±20V | 1450 pF @ 15 V | - | 75W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
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