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FET, MOSFET
| 制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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全部重置
应用所有
结果:
| Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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R6004PND3FRATLMOSFET N-CH 600V 4A TO252 Rohm Semiconductor |
4,512 | - |
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Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 4A (Tc) | 10V | 1.8Ohm @ 2A, 10V | 4.5V @ 1mA | 11 nC @ 10 V | ±25V | 280 pF @ 25 V | - | 65W (Tc) | 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-252 |
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RS1P600BHTB1NCH 100V 60A, HSOP8, POWER MOSFE Rohm Semiconductor |
2,425 | - |
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Tabla de datos |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 18A (Ta), 60A (Tc) | 6V, 10V | 8.8mOhm @ 18A, 10V | 4V @ 1mA | 64 nC @ 10 V | ±20V | 4080 pF @ 50 V | - | 3W (Ta), 35W (Tc) | 150°C (TJ) | - | - | Surface Mount | 8-HSOP |
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R6530ENZ4C13650V 30A TO-247, LOW-NOISE POWER Rohm Semiconductor |
482 | - |
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Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 10V | 140mOhm @ 14.5A, 10V | 4V @ 960µA | 90 nC @ 10 V | ±20V | 2100 pF @ 25 V | - | 305W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247G |
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R6530KNZ4C13650V 30A TO-247, HIGH-SPEED SWIT Rohm Semiconductor |
353 | - |
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Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 10V | 140mOhm @ 14.5A, 10V | 5V @ 960µA | 56 nC @ 10 V | ±20V | 2350 pF @ 25 V | - | 305W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247G |
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RCX450N20MOSFET N-CH 200V 45A TO220FM Rohm Semiconductor |
425 | - |
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Tabla de datos |
- | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 45A (Tc) | 10V | 55mOhm @ 22.5A, 10V | 5V @ 1mA | 80 nC @ 10 V | ±30V | 4200 pF @ 25 V | - | 2.23W (Ta), 40W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FM |
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R8002ANJGTLNCH 800V 2A POWER MOSFET : R8002 Rohm Semiconductor |
925 | - |
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Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 2A (Tc) | 10V | 4.3Ohm @ 1A, 10V | 5V @ 1mA | 13 nC @ 10 V | ±30V | 250 pF @ 25 V | - | 62W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-263S |
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R6030ENXC7G600V 30A TO-220FM, LOW-NOISE POW Rohm Semiconductor |
846 | - |
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Tabla de datos |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 130mOhm @ 14.5A, 10V | 4V @ 1mA | 85 nC @ 10 V | ±20V | 2100 pF @ 25 V | - | 86W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FM |
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R8005ANJFRGTLMOSFET N-CH 800V 5A LPTS Rohm Semiconductor |
1,848 | - |
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Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 5A (Tc) | 10V | 2.1Ohm @ 2.5A, 10V | 5V @ 1mA | 20 nC @ 10 V | ±30V | 500 pF @ 25 V | - | 120W (Tc) | 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | LPTS |
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R6024KNZ4C13MOSFET N-CH 600V 24A TO247 Rohm Semiconductor |
570 | - |
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Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 10V | 165mOhm @ 11.3A, 10V | 5V @ 1mA | 45 nC @ 10 V | ±20V | 2000 pF @ 25 V | - | 245W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
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R6011KNXC7G600V 11A TO-220FM, HIGH-SPEED SW Rohm Semiconductor |
680 | - |
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Tabla de datos |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Ta) | 10V | 390mOhm @ 3.8A, 10V | 5V @ 1mA | 22 nC @ 10 V | ±20V | 740 pF @ 25 V | - | 53W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FM |
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