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FET, MOSFET
| 制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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全部重置
应用所有
结果:
| Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPDQ60R040S7AXTMA1MOSFET Infineon Technologies |
720 | - |
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Tabla de datos |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 14A (Tc) | 12V | 40mOhm @ 13A, 12V | 4.5V @ 790µA | 83 nC @ 12 V | ±20V | - | - | 272W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22-1 |
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IMZA65R060M2HXKSA1IMZA65R060M2HXKSA1 Infineon Technologies |
400 | - |
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Tabla de datos |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 32.8A (Tc) | 15V, 20V | 55mOhm @ 15.4A, 20V | 5.6V @ 3.1mA | 19 nC @ 18 V | +23V, -7V | 669 pF @ 400 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-8 |
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AIMZA75R090M1HXKSA1AUTOMOTIVE_SICMOS Infineon Technologies |
229 | - |
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Tabla de datos |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 23A (Tj) | 15V, 20V | 83mOhm @ 7.4A, 20V | 5.6V @ 2.6mA | 15 nC @ 18 V | +23V, -5V | 542 pF @ 500 V | - | 113W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4 |
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IMBG40R025M2HXTMA1SIC-MOS Infineon Technologies |
900 | - |
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Tabla de datos |
CoolSiC™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 400 V | 9A (Ta), 68A (Tc) | 15V, 18V | 32.1mOhm @ 15.7A, 18V | 5.6V @ 5.6mA | 36 nC @ 18 V | +23V, -7V | 1690 pF @ 200 V | - | 3.8W (Ta), 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-11 |
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AIMCQ120R080M1TXTMA1SIC_DISCRETE Infineon Technologies |
770 | - |
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- |
CoolSiC™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 34A (Tc) | 18V, 20V | 100mOhm @ 10A, 20V | 5.1V @ 3.3mA | 24 nC @ 20 V | +25V, -10V | 671 pF @ 800 V | - | 211W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22 |
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IPDQ60R035CFD7XTMA1HIGH POWER_NEW PG-HDSOP-22 Infineon Technologies |
750 | - |
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Tabla de datos |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | - | MOSFET (Metal Oxide) | 600 V | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-HDSOP-22-1 |
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IMLT65R040M2HXTMA1SILICON CARBIDE MOSFET Infineon Technologies |
327 | - |
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Tabla de datos |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPDQ65R040CFD7AXTMA1AUTOMOTIVE_COOLMOS Infineon Technologies |
392 | - |
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Tabla de datos |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 64A (Tc) | 10V | 40mOhm @ 24.8A, 10V | 4.5V @ 1.24mA | 97 nC @ 10 V | ±20V | 4975 pF @ 400 V | - | 357W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22-1 |
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IPQC65R040CFD7AXTMA1AUTOMOTIVE_COOLMOS Infineon Technologies |
200 | - |
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Tabla de datos |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 64A (Tc) | 10V | 40mOhm @ 24.8A, 10V | 4.5V @ 1.24mA | 97 nC @ 10 V | ±20V | 4975 pF @ 400 V | - | 357W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22-1 |
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IPZA60R037CM8XKSA1IPZA60R037CM8XKSA1 Infineon Technologies |
195 | - |
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- |
CoolMOS™ | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 64A (Tj) | 10V | 37mOhm @ 27A, 10V | 4.7V @ 680µA | 79 nC @ 10 V | ±20V | 3458 pF @ 400 V | - | 329W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-4-U02 |
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