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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPD50P03P4L11ATMA1MOSFET P-CH 30V 50A TO252-3 Infineon Technologies |
2,332 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 10.5mOhm @ 50A, 10V | 2V @ 85µA | 55 nC @ 10 V | +5V, -16V | 3770 pF @ 25 V | - | 58W (Tc) | -55°C ~ 155°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
|
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IPD70N04S3-07MOSFET N-CH 40V 82A TO252-3 Infineon Technologies |
2,231 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 82A (Tc) | 10V | 6mOhm @ 70A, 10V | 4V @ 50µA | 40 nC @ 10 V | ±20V | 2700 pF @ 25 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
|
|
IPD80N06S3-09MOSFET N-CH 55V 80A TO252-3 Infineon Technologies |
2,157 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 8.4mOhm @ 40A, 10V | 4V @ 55µA | 88 nC @ 10 V | ±20V | 6100 pF @ 25 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
|
|
IPD90P03P4L04ATMA1MOSFET P-CH 30V 90A TO252-3 Infineon Technologies |
2,093 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 90A (Tc) | 4.5V, 10V | 4.1mOhm @ 90A, 10V | 2V @ 253µA | 160 nC @ 10 V | +5V, -16V | 11300 pF @ 25 V | - | 137W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3-11 |
|
IPI024N06N3GHKSA1MOSFET N-CH 60V 120A TO262-3 Infineon Technologies |
4,998 |
|
Tabla de datos |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 2.4mOhm @ 100A, 10V | 4V @ 196µA | 275 nC @ 10 V | ±20V | 23000 pF @ 30 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
|
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IPI028N08N3GHKSA1MOSFET N-CH 80V 100A TO262-3 Infineon Technologies |
4,704 |
|
Tabla de datos |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 100A (Tc) | 6V, 10V | 2.8mOhm @ 100A, 10V | 3.5V @ 270µA | 206 nC @ 10 V | ±20V | 14200 pF @ 40 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
|
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IPI030N10N3GHKSA1MOSFET N-CH 100V 100A TO262-3 Infineon Technologies |
3,528 |
|
Tabla de datos |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 6V, 10V | 3mOhm @ 100A, 10V | 3.5V @ 275µA | 206 nC @ 10 V | ±20V | 14800 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
|
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IPI032N06N3 GMOSFET N-CH 60V 120A TO262-3 Infineon Technologies |
4,528 |
|
Tabla de datos |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 3.2mOhm @ 100A, 10V | 4V @ 118µA | 165 nC @ 10 V | ±20V | 13000 pF @ 30 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
|
|
IPI037N06L3GHKSA1MOSFET N-CH 60V 90A TO262-3 Infineon Technologies |
4,057 |
|
Tabla de datos |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 90A (Tc) | 10V | 3.7mOhm @ 90A, 10V | 2.2V @ 93µA | 79 nC @ 4.5 V | ±20V | 13000 pF @ 30 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
|
|
IPI037N08N3GHKSA1MOSFET N-CH 80V 100A TO262-3 Infineon Technologies |
4,699 |
|
Tabla de datos |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 100A (Tc) | 6V, 10V | 3.75mOhm @ 100A, 10V | 3.5V @ 155µA | 117 nC @ 10 V | ±20V | 8110 pF @ 40 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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