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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IPI70N10S312AKSA1MOSFET N-CH 100V 70A TO262-3 Infineon Technologies |
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Tabla de datos |
OptiMOS™ T | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 70A (Tc) | 10V | 11.6mOhm @ 70A, 10V | 4V @ 83µA | 66 nC @ 10 V | ±20V | 4355 pF @ 25 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPI80N03S4L03AKSA1MOSFET N-CH 30V 80A TO262-3 Infineon Technologies |
0 |
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Tabla de datos |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 2.7mOhm @ 80A, 10V | 2.2V @ 90µA | 140 nC @ 10 V | ±16V | 9750 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPI80N04S306AKSA1MOSFET N-CH 40V 80A TO262-3 Infineon Technologies |
0 |
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Tabla de datos |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 5.7mOhm @ 80A, 10V | 4V @ 52µA | 47 nC @ 10 V | ±20V | 3250 pF @ 25 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPI80N06S208AKSA1MOSFET N-CH 55V 80A TO262-3 Infineon Technologies |
0 |
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Tabla de datos |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 8mOhm @ 58A, 10V | 4V @ 150µA | 96 nC @ 10 V | ±20V | 2860 pF @ 25 V | - | 215W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPI80N06S2L05AKSA1MOSFET N-CH 55V 80A TO262-3 Infineon Technologies |
0 |
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Tabla de datos |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 4.8mOhm @ 80A, 10V | 2V @ 250µA | 230 nC @ 10 V | ±20V | 5700 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPI80N06S2L11AKSA1MOSFET N-CH 55V 80A TO262-3 Infineon Technologies |
0 |
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Tabla de datos |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 11mOhm @ 60A, 10V | 2V @ 93µA | 80 nC @ 10 V | ±20V | 2075 pF @ 25 V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPI90R1K0C3XKSA1MOSFET N-CH 900V 5.7A TO262-3 Infineon Technologies |
0 |
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Tabla de datos |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 5.7A (Tc) | 10V | 1Ohm @ 3.3A, 10V | 3.5V @ 370µA | 34 nC @ 10 V | ±20V | 850 pF @ 100 V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPI90R1K2C3XKSA1MOSFET N-CH 900V 5.1A TO262-3 Infineon Technologies |
0 |
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Tabla de datos |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 5.1A (Tc) | 10V | 1.2Ohm @ 2.8A, 10V | 3.5V @ 310µA | 28 nC @ 10 V | ±20V | 710 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPI90R340C3XKSA1MOSFET N-CH 900V 15A TO262-3 Infineon Technologies |
0 |
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Tabla de datos |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 15A (Tc) | 10V | 340mOhm @ 9.2A, 10V | 3.5V @ 1mA | 94 nC @ 10 V | ±20V | 2400 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IPI90R500C3XKSA1MOSFET N-CH 900V 11A TO262-3 Infineon Technologies |
0 |
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Tabla de datos |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 11A (Tc) | 10V | 500mOhm @ 6.6A, 10V | 3.5V @ 740µA | 68 nC @ 10 V | ±20V | 1700 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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