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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPI075N15N3GHKSA1MOSFET N-CH 150V 100A TO262-3 Infineon Technologies |
3,522 |
|
Tabla de datos |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 100A (Tc) | 8V, 10V | 7.5mOhm @ 100A, 10V | 4V @ 270µA | 93 nC @ 10 V | ±20V | 5470 pF @ 75 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
|
IPP075N15N3GHKSA1MOSFET N-CH 150V 100A TO220-3 Infineon Technologies |
4,480 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 100A (Tc) | 8V, 10V | 7.5mOhm @ 100A, 10V | 4V @ 270µA | 93 nC @ 10 V | ±20V | 5470 pF @ 75 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
IRF6623TR1PBFMOSFET N-CH 20V 16A DIRECTFET Infineon Technologies |
3,032 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric ST | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 16A (Ta), 55A (Tc) | 4.5V, 10V | 5.7mOhm @ 15A, 10V | 2.2V @ 250µA | 17 nC @ 4.5 V | ±20V | 1360 pF @ 10 V | - | 1.4W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ ST |
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BSC042N03S GMOSFET N-CH 30V 20A/95A TDSON Infineon Technologies |
4,245 |
|
Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Ta), 95A (Tc) | 4.5V, 10V | 4.2mOhm @ 50A, 10V | 2V @ 50µA | 28 nC @ 5 V | ±20V | 3660 pF @ 15 V | - | 2.8W (Ta), 62.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-5 |
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IRFS23N20DTRLPMOSFET N-CH 200V 24A D2PAK Infineon Technologies |
4,246 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 24A (Tc) | 10V | 100mOhm @ 14A, 10V | 5.5V @ 250µA | 86 nC @ 10 V | ±30V | 1960 pF @ 25 V | - | 3.8W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
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IRFS52N15DTRRPMOSFET N-CH 150V 51A D2PAK Infineon Technologies |
2,563 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 51A (Tc) | 10V | 32mOhm @ 36A, 10V | 5V @ 250µA | 89 nC @ 10 V | ±30V | 2770 pF @ 25 V | - | 3.8W (Ta), 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IPA60R125CPXKSA1MOSFET N-CH 650V 25A TO220-FP Infineon Technologies |
2,939 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 Full Pack | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 25A (Tc) | 10V | 125mOhm @ 16A, 10V | 3.5V @ 1.1mA | 70 nC @ 10 V | ±20V | 2500 pF @ 100 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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SPD07N60C3TMOSFET N-CH 650V 7.3A TO252-3 Infineon Technologies |
2,689 |
|
Tabla de datos |
CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 650 V | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 3.9V @ 350µA | 27 nC @ 10 V | ±20V | 790 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
|
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IPB120N04S3-02MOSFET N-CH 40V 120A D2PAK Infineon Technologies |
3,046 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 10V | 2mOhm @ 80A, 10V | 4V @ 230µA | 210 nC @ 10 V | ±20V | 14300 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IRFH4210DTRPBFMOSFET N-CH 25V 44A PQFN Infineon Technologies |
4,761 |
|
Tabla de datos |
HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 25 V | 44A (Ta) | 4.5V, 10V | 1.1mOhm @ 50A, 10V | 2.1V @ 100µA | 77 nC @ 10 V | ±20V | 4812 pF @ 13 V | - | 3.5W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PQFN (5x6) |
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