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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GS-065-014-6-L-TRGS-065-014-6-L-TR Infineon Technologies Canada Inc. |
2,032 |
|
- |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 700 V | 15.2A (Tc) | 6V | 138mOhm @ 4A, 6V | 2.6V @ 3mA | 2.7 nC @ 6 V | +7V, -10V | 85 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PDFN (5x6) |
|
AUIRF1405ZS-7TRLMOSFET N-CH 55V 120A D2PAK Infineon Technologies |
4,181 |
|
Tabla de datos |
HEXFET® | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 120A (Tc) | 10V | 4.9mOhm @ 88A, 10V | 4V @ 150µA | 230 nC @ 10 V | ±20V | 5360 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK (7-Lead) |
|
IRLU3103MOSFET N-CH 30V 55A I-PAK Infineon Technologies |
4,959 |
|
Tabla de datos |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 55A (Tc) | 4.5V, 10V | 19mOhm @ 33A, 10V | 1V @ 250µA | 50 nC @ 4.5 V | ±16V | 1600 pF @ 25 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
|
|
IPB100N12S305ATMA2MOSFET_(120V 300V) Infineon Technologies |
3,383 |
|
Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 100A (Tc) | 10V | 5.1mOhm @ 100A, 10V | 4V @ 240µA | 185 nC @ 10 V | ±20V | 11570 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-3-2 |
|
IRF7201MOSFET N-CH 30V 7.3A 8SO Infineon Technologies |
4,946 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 7.3A (Tc) | 4.5V, 10V | 30mOhm @ 7.3A, 10V | 1V @ 250µA | 28 nC @ 10 V | ±20V | 550 pF @ 25 V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
IRL3705NSTRLMOSFET N-CH 55V 89A D2PAK Infineon Technologies |
4,054 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 89A (Tc) | 4V, 10V | 10mOhm @ 46A, 10V | 2V @ 250µA | 98 nC @ 5 V | ±16V | 3600 pF @ 25 V | - | 3.8W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IPP100N08S2L07AKSA1MOSFET N-CH 75V 100A TO220-3 Infineon Technologies |
4,538 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 100A (Tc) | 4.5V, 10V | 6.8mOhm @ 80A, 10V | 2V @ 250µA | 246 nC @ 10 V | ±20V | 5400 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
SPB160N04S203CTMA1MOSFET N-CH 40V 160A TO263-7 Infineon Technologies |
4,289 |
|
Tabla de datos |
OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 10V | 2.9mOhm @ 80A, 10V | 4V @ 250µA | 170 nC @ 10 V | ±20V | 7320 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-3 |
|
|
SPB160N04S2L03DTMA1MOSFET N-CH 40V 160A TO263-7 Infineon Technologies |
3,059 |
|
Tabla de datos |
OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 10V | 2.7mOhm @ 80A, 10V | 2V @ 250µA | 230 nC @ 10 V | ±20V | 8000 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-3 |
|
IRFSL3207MOSFET N-CH 75V 180A TO262 Infineon Technologies |
2,850 |
|
Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 180A (Tc) | 10V | 4.5mOhm @ 75A, 10V | 4V @ 250µA | 260 nC @ 10 V | ±20V | 7600 pF @ 50 V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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