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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF3711SMOSFET N-CH 20V 110A D2PAK Infineon Technologies |
2,589 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 110A (Tc) | 4.5V, 10V | 6mOhm @ 15A, 10V | 3V @ 250µA | 44 nC @ 4.5 V | ±20V | 2980 pF @ 10 V | - | 3.1W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D2PAK |
|
IRF1104LMOSFET N-CH 40V 100A TO262 Infineon Technologies |
2,445 |
|
Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 9mOhm @ 60A, 10V | 4V @ 250µA | 93 nC @ 10 V | ±20V | 2900 pF @ 25 V | - | 2.4W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
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IRF1104SMOSFET N-CH 40V 100A D2PAK Infineon Technologies |
3,731 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 9mOhm @ 60A, 10V | 4V @ 250µA | 93 nC @ 10 V | ±20V | 2900 pF @ 25 V | - | 2.4W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IRF7809PBFMOSFET N-CH 28V 14.5A 8SO Infineon Technologies |
3,406 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 28 V | 14.5A (Ta) | 4.5V | - | 1V @ 250µA | - | ±12V | - | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
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IRFZ46NSTRLPBFMOSFET N-CH 55V 53A D2PAK Infineon Technologies |
2,070 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 53A (Tc) | 10V | 16.5mOhm @ 28A, 10V | 4V @ 250µA | 72 nC @ 10 V | ±20V | 1696 pF @ 25 V | - | 3.8W (Ta), 107W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
BSF450NE7NH3XUMA1MOSFET N-CH 75V 5A/15A 2WDSON Infineon Technologies |
4,134 |
|
Tabla de datos |
OptiMOS™ | 3-WDSON | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 5A (Ta), 15A (Tc) | 7V, 10V | 45mOhm @ 8A, 10V | 3.5V @ 8µA | 6 nC @ 10 V | ±20V | 390 pF @ 37.5 V | - | 2.2W (Ta), 18W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | MG-WDSON-2, CanPAK M™ |
|
IRLU2905MOSFET N-CH 55V 42A I-PAK Infineon Technologies |
4,697 |
|
Tabla de datos |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | 4V, 10V | 27mOhm @ 25A, 10V | 2V @ 250µA | 48 nC @ 5 V | ±16V | 1700 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
|
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IRLU2905ZMOSFET N-CH 55V 42A I-PAK Infineon Technologies |
4,788 |
|
Tabla de datos |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | 4.5V, 10V | 13.5mOhm @ 36A, 10V | 3V @ 250µA | 35 nC @ 5 V | ±16V | 1570 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
|
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IRL1104SMOSFET N-CH 40V 104A D2PAK Infineon Technologies |
4,849 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 104A (Tc) | 4.5V, 10V | 8mOhm @ 62A, 10V | 1V @ 250µA | 68 nC @ 4.5 V | ±16V | 3445 pF @ 25 V | - | 2.4W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IRL1104MOSFET N-CH 40V 104A TO220AB Infineon Technologies |
4,608 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 104A (Tc) | 4.5V, 10V | 8mOhm @ 62A, 10V | 1V @ 250µA | 68 nC @ 4.5 V | ±16V | 3445 pF @ 25 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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