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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BSC0805LSATMA1MOSFET N-CH 100V 79A TDSON-8-6 Infineon Technologies |
4,562 |
|
Tabla de datos |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 79A (Tc) | 4.5V, 10V | 7mOhm @ 40A, 10V | 2.3V @ 49µA | 20 nC @ 4.5 V | ±20V | 2700 pF @ 50 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-6 |
|
IRF3315LMOSFET N-CH 150V 21A TO262 Infineon Technologies |
3,306 |
|
Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 21A (Tc) | 10V | 82mOhm @ 12A, 10V | 4V @ 250µA | 95 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3.8W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
IRF3709ZSTRRPBFMOSFET N-CH 30V 87A D2PAK Infineon Technologies |
3,832 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 87A (Tc) | 4.5V, 10V | 6.3mOhm @ 21A, 10V | 2.25V @ 250µA | 26 nC @ 4.5 V | ±20V | 2130 pF @ 15 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
|
IRF5210STRRMOSFET P-CH 100V 40A D2PAK Infineon Technologies |
2,373 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 40A (Tc) | 10V | 60mOhm @ 24A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±20V | 2700 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IRFB33N15DMOSFET N-CH 150V 33A TO220AB Infineon Technologies |
4,228 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 33A (Tc) | 10V | 56mOhm @ 20A, 10V | 5.5V @ 250µA | 90 nC @ 10 V | ±30V | 2020 pF @ 25 V | - | 3.8W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
IRF7220MOSFET P-CH 14V 11A 8SO Infineon Technologies |
3,018 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 14 V | 11A (Ta) | 2.5V, 4.5V | 12mOhm @ 11A, 4.5V | 600mV @ 250µA (Min) | 125 nC @ 5 V | ±12V | 8075 pF @ 10 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
|
IRF7324D1MOSFET P-CH 20V 2.2A 8SO Infineon Technologies |
3,407 |
|
Tabla de datos |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 2.2A (Ta) | 2.7V, 4.5V | 270mOhm @ 1.2A, 4.5V | 700mV @ 250µA (Min) | 7.8 nC @ 4.5 V | ±12V | 260 pF @ 15 V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
|
IRF7233MOSFET P-CH 12V 9.5A 8SO Infineon Technologies |
2,979 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12 V | 9.5A (Ta) | 2.5V, 4.5V | 20mOhm @ 9.5A, 4.5V | 600mV @ 250µA (Min) | 74 nC @ 5 V | ±12V | 6000 pF @ 10 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
|
IRF7322D1MOSFET P-CH 20V 5.3A 8SO Infineon Technologies |
2,676 |
|
Tabla de datos |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 5.3A (Ta) | 2.7V, 4.5V | 62mOhm @ 2.9A, 4.5V | 700mV @ 250µA (Min) | 29 nC @ 4.5 V | ±12V | 780 pF @ 15 V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
|
IRFS33N15DMOSFET N-CH 150V 33A D2PAK Infineon Technologies |
2,193 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 33A (Tc) | 10V | 56mOhm @ 20A, 10V | 5.5V @ 250µA | 90 nC @ 10 V | ±30V | 2020 pF @ 25 V | - | 3.8W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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