制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IRFH7446TR2PBFMOSFET N CH 40V 85A PQFN 5X6 Infineon Technologies |
3,239 | - |
|
![]() Tabla de datos |
- | 8-PowerTDFN | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 85A (Tc) | - | 3.3mOhm @ 50A, 10V | 3.9V @ 100µA | 98 nC @ 10 V | - | 3174 pF @ 25 V | - | - | - | - | - | Surface Mount | 8-PQFN (5x6) |
![]() |
IRFZ44ESMOSFET N-CH 60V 48A D2PAK Infineon Technologies |
3,278 | - |
|
![]() Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 48A (Tc) | 10V | 23mOhm @ 29A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 1360 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
![]() |
IRF1010ZMOSFET N-CH 55V 75A TO220AB Infineon Technologies |
4,841 | - |
|
![]() Tabla de datos |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 7.5mOhm @ 75A, 10V | 4V @ 250µA | 95 nC @ 10 V | ±20V | 2840 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
![]() |
BSO203SPNTMA1MOSFET P-CH 20V 9A 8DSO Infineon Technologies |
2,687 | - |
|
![]() Tabla de datos |
OptiMOS™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 9A (Ta) | 2.5V, 4.5V | 21mOhm @ 9A, 4.5V | 1.2V @ 100µA | 50.4 nC @ 4.5 V | ±12V | 2265 pF @ 15 V | - | 2.35W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-8 |
![]() |
IRF6810STRPBFMOSFET N CH 25V 16A S1 Infineon Technologies |
2,212 | - |
|
![]() Tabla de datos |
HEXFET® | DirectFET™ Isometric S1 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 16A (Ta), 50A (Tc) | 4.5V, 10V | 5.2mOhm @ 16A, 10V | 2.1V @ 25µA | 11 nC @ 4.5 V | ±16V | 1038 pF @ 13 V | - | 2.1W (Ta), 20W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric S1 |
![]() |
IRFB3006GPBFMOSFET N-CH 60V 195A TO220AB Infineon Technologies |
3,833 | - |
|
![]() Tabla de datos |
HEXFET® | TO-220-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 60 V | 195A (Tc) | 10V | 2.5mOhm @ 170A, 10V | 4V @ 250µA | 300 nC @ 10 V | ±20V | 8970 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
![]() |
IRF6618TR1MOSFET N-CH 30V 30A DIRECTFET Infineon Technologies |
4,344 | - |
|
![]() Tabla de datos |
HEXFET® | DirectFET™ Isometric MT | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Ta), 170A (Tc) | 4.5V, 10V | 2.2mOhm @ 30A, 10V | 2.35V @ 250µA | 65 nC @ 4.5 V | ±20V | 5640 pF @ 15 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MT |
|
IRF7702TRMOSFET P-CH 12V 8A 8TSSOP Infineon Technologies |
3,771 | - |
|
![]() Tabla de datos |
HEXFET® | 8-TSSOP (0.173", 4.40mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12 V | 8A (Tc) | 1.8V, 4.5V | 14mOhm @ 8A, 4.5V | 1.2V @ 250µA | 81 nC @ 4.5 V | ±8V | 3470 pF @ 10 V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-TSSOP |
![]() |
IRF7204MOSFET P-CH 20V 5.3A 8SO Infineon Technologies |
4,972 | - |
|
![]() Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 5.3A (Ta) | 4.5V, 10V | 60mOhm @ 5.3A, 10V | 2.5V @ 250µA | 25 nC @ 10 V | ±12V | 860 pF @ 10 V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
![]() |
IRF7207MOSFET P-CH 20V 5.4A 8SO Infineon Technologies |
2,548 | - |
|
![]() Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 5.4A (Tc) | 2.7V, 4.5V | 60mOhm @ 5.4A, 4.5V | 700mV @ 250µA (Min) | 22 nC @ 4.5 V | ±12V | 780 pF @ 15 V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |