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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRLR7843TRLPBFMOSFET N-CH 30V 161A DPAK Infineon Technologies |
4,152 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 161A (Tc) | 4.5V, 10V | 3.3mOhm @ 15A, 10V | 2.3V @ 250µA | 50 nC @ 4.5 V | ±20V | 4380 pF @ 15 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
BSC0803LSATMA1MOSFET N-CH 100V 10A/44A TDSON-6 Infineon Technologies |
4,040 |
|
Tabla de datos |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 10A (Ta), 44A (Tc) | 4.5V, 10V | 14.6mOhm @ 22A, 10V | 2.3V @ 23µA | 10 nC @ 4.5 V | ±20V | 1300 pF @ 50 V | - | 2.5W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-6 |
|
|
IRFR12N25DMOSFET N-CH 250V 14A DPAK Infineon Technologies |
3,505 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 14A (Tc) | 10V | 260mOhm @ 8.4A, 10V | 5V @ 250µA | 35 nC @ 10 V | ±30V | 810 pF @ 25 V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
SPI80N10LMOSFET N-CH 100V 80A TO262-3 Infineon Technologies |
3,179 |
|
Tabla de datos |
SIPMOS® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 80A (Tc) | 4.5V, 10V | 14mOhm @ 58A, 10V | 2V @ 2mA | 240 nC @ 10 V | ±20V | 4540 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
|
SPP80N10LMOSFET N-CH 100V 80A TO220-3 Infineon Technologies |
4,971 |
|
Tabla de datos |
SIPMOS® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 80A (Tc) | 4.5V, 10V | 14mOhm @ 58A, 10V | 2V @ 2mA | 240 nC @ 10 V | ±20V | 4540 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
IRL2203NSTRRMOSFET N-CH 30V 116A D2PAK Infineon Technologies |
3,480 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 116A (Tc) | 4.5V, 10V | 7mOhm @ 60A, 10V | 3V @ 250µA | 60 nC @ 4.5 V | ±16V | 3290 pF @ 25 V | - | 3.8W (Ta), 180W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRFU9N20DMOSFET N-CH 200V 9.4A IPAK Infineon Technologies |
3,618 |
|
Tabla de datos |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 9.4A (Tc) | 10V | 380mOhm @ 5.6A, 10V | 5.5V @ 250µA | 27 nC @ 10 V | ±30V | 560 pF @ 25 V | - | 86W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK (TO-251AA) |
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IRF7459MOSFET N-CH 20V 12A 8SO Infineon Technologies |
3,875 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 12A (Ta) | 2.8V, 10V | 9mOhm @ 12A, 10V | 2V @ 250µA | 35 nC @ 4.5 V | ±12V | 2480 pF @ 10 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
IRF1010NPBFMOSFET N-CH 55V 85A TO220AB Infineon Technologies |
3,102 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 85A (Tc) | 10V | 11mOhm @ 43A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | 3210 pF @ 25 V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
IRF6603MOSFET N-CH 30V 27A DIRECTFET Infineon Technologies |
4,887 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric MT | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 27A (Ta), 92A (Tc) | 4.5V, 10V | 3.4mOhm @ 25A, 10V | 2.5V @ 250µA | 72 nC @ 4.5 V | +20V, -12V | 6590 pF @ 15 V | - | 3.6W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MT |
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