制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IRLZ24NPBFMOSFET N-CH 55V 18A TO220AB Infineon Technologies |
4,128 | - |
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HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 18A (Tc) | 4V, 10V | 60mOhm @ 11A, 10V | 2V @ 250µA | 15 nC @ 5 V | ±16V | 480 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRFH8325TR2PBFMOSFET N-CH 30V 17A 5X6 PQFN Infineon Technologies |
3,027 | - |
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- | 8-PowerTDFN | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 21A (Ta), 82A (Tc) | - | 5mOhm @ 20A, 10V | 2.35V @ 50µA | 32 nC @ 10 V | - | 2487 pF @ 10 V | - | - | - | - | - | Surface Mount | PQFN (5x6) |
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IPA65R190E6XKSA1MOSFET N-CH 650V 20.2A TO220 Infineon Technologies |
2,068 | - |
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CoolMOS™ | TO-220-3 Full Pack | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 20.2A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 3.5V @ 730µA | 73 nC @ 10 V | ±20V | 1620 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-111 |
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IPP65R190C6XKSA1MOSFET N-CH 650V 20.2A TO220-3 Infineon Technologies |
3,843 | - |
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CoolMOS™ | TO-220-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 20.2A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 3.5V @ 730µA | 73 nC @ 10 V | ±20V | 1620 pF @ 100 V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IRF5802TRMOSFET N-CH 150V 0.9A 6-TSOP Infineon Technologies |
3,329 | - |
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- | SOT-23-6 Thin, TSOT-23-6 | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 900mA (Ta) | - | 1.2Ohm @ 540mA, 10V | 5.5V @ 250µA | 6.8 nC @ 10 V | - | 88 pF @ 25 V | - | - | - | - | - | Surface Mount | Micro6™(TSOP-6) |
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BSO4822MOSFET N-CH 30V 12.7A 8SO Infineon Technologies |
3,115 | - |
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OptiMOS™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 12.7A (Ta) | 4.5V, 10V | 10mOhm @ 12.7A, 10V | 2V @ 55µA | 26.2 nC @ 5 V | ±20V | 1640 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-8 |
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IRFR5410TRLPBFMOSFET P-CH 100V 13A DPAK Infineon Technologies |
3,588 | - |
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HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 13A (Tc) | 10V | 205mOhm @ 7.8A, 10V | 4V @ 250µA | 58 nC @ 10 V | ±20V | 760 pF @ 25 V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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BSO119N03SMOSFET N-CH 30V 9A 8DSO Infineon Technologies |
4,257 | - |
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OptiMOS™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Ta) | 4.5V, 10V | 11.9mOhm @ 11A, 10V | 2V @ 25µA | 13 nC @ 5 V | ±20V | 1730 pF @ 15 V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-8 |
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BSC014N03LSGATMA1MOSFET N-CH 30V 34A/100A TDSON Infineon Technologies |
4,682 | - |
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OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 34A (Ta), 100A (Tc) | 4.5V, 10V | 1.4mOhm @ 30A, 10V | 2.2V @ 250µA | 131 nC @ 10 V | ±20V | 10000 pF @ 15 V | - | 2.5W (Ta), 139W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-1 |
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BSC014N03MSGATMA1MOSFET N-CH 30V 30A/100A TDSON Infineon Technologies |
4,811 | - |
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OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Ta), 100A (Tc) | 4.5V, 10V | 1.4mOhm @ 30A, 10V | 2V @ 250µA | 173 nC @ 10 V | ±20V | 13000 pF @ 15 V | - | 2.5W (Ta), 139W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-1 |