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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFR3707TRPBFMOSFET N-CH 30V 61A DPAK Infineon Technologies |
4,702 |
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Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 61A (Tc) | 4.5V, 10V | 13mOhm @ 15A, 10V | 3V @ 250µA | 19 nC @ 4.5 V | ±20V | 1990 pF @ 15 V | - | 87W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
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IRLR8503TRPBFMOSFET N-CH 30V 44A DPAK Infineon Technologies |
2,684 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 44A (Tc) | 4.5V, 10V | 16mOhm @ 15A, 10V | 3V @ 250µA | 20 nC @ 5 V | ±20V | 1650 pF @ 25 V | - | 62W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRF7705TRPBFMOSFET P-CH 30V 8A 8TSSOP Infineon Technologies |
3,516 |
|
Tabla de datos |
HEXFET® | 8-TSSOP (0.173", 4.40mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 8A (Tc) | 4.5V, 10V | 18mOhm @ 8A, 10V | 2.5V @ 250µA | 88 nC @ 10 V | ±20V | 2774 pF @ 25 V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-TSSOP |
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IPLK70R1K2P7ATMA1MOSFET N-CH 700V TDSON-8 Infineon Technologies |
2,342 |
|
Tabla de datos |
CoolMOS™ P7 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-TDSON-8 |
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ISK057N04LM6ATLA1MOSFET N-CH 40V 64A 6VSON Infineon Technologies |
3,488 |
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Tabla de datos |
OptiMOS™ 6 | 6-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 64A (Tc) | 4.5V, 10V | 5.75mOhm @ 20A, 10V | 2.3V @ 250µA | 12 nC @ 10 V | ±20V | 870 pF @ 20 V | - | 2.1W (Ta), 39.1W (Tc) | -55°C ~ 155°C (TJ) | - | - | Surface Mount | PG-VSON-6-1 |
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IRF7240TRMOSFET P-CH 40V 10.5A 8SO Infineon Technologies |
4,187 |
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Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 10.5A (Ta) | 4.5V, 10V | 15mOhm @ 10.5A, 10V | 3V @ 250µA | 110 nC @ 10 V | ±20V | 9250 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 155°C (TJ) | - | - | Surface Mount | 8-SOIC |
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SPP11N60CFDXKSA1MOSFET N-CH 650V 11A TO220-3 Infineon Technologies |
2,470 |
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Tabla de datos |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 440mOhm @ 7A, 10V | 5V @ 500µA | 64 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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SPP11N60CFDHKSA1MOSFET N-CH 600V 11A TO220-3 Infineon Technologies |
3,789 |
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Tabla de datos |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 440mOhm @ 7A, 10V | 5V @ 500µA | 64 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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BTS244Z E3043MOSFET N-CH 55V 35A TO220-5-43 Infineon Technologies |
4,746 |
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Tabla de datos |
TEMPFET® | TO-220-5 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 35A (Tc) | 4.5V, 10V | 13mOhm @ 19A, 10V | 2V @ 130µA | 130 nC @ 10 V | ±20V | 2660 pF @ 25 V | Temperature Sensing Diode | 170W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | P-TO220-5-43 |
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SPB80N06S2-05MOSFET N-CH 55V 80A TO263-3 Infineon Technologies |
2,983 |
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Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 4.8mOhm @ 80A, 10V | 4V @ 250µA | 170 nC @ 10 V | ±20V | 6790 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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