制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IRF7471TRPBFMOSFET N-CH 40V 10A 8SO Infineon Technologies |
2,772 | - |
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HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 10A (Ta) | 4.5V, 10V | 13mOhm @ 10A, 10V | 3V @ 250µA | 32 nC @ 4.5 V | ±20V | 2820 pF @ 20 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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BSC205N10LS GMOSFET N-CH 100V 7.4A/45A TDSON Infineon Technologies |
4,171 | - |
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OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 7.4A (Ta), 45A (Tc) | 4.5V, 10V | 20.5mOhm @ 45A, 10V | 2.4V @ 43µA | 41 nC @ 10 V | ±20V | 2900 pF @ 50 V | - | 76W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-1 |
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BSC0703LSATMA1MOSFET N-CH 60V 15A/64A TDSON Infineon Technologies |
3,298 | - |
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OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 15A (Ta), 64A (Tc) | 4.5V, 10V | 6.5mOhm @ 32A, 10V | 2.3V @ 20µA | 13 nC @ 4.5 V | ±20V | 1800 pF @ 30 V | - | 2.5W (Ta), 46W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-6 |
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IPP062NE7N3GXKSA1MOSFET N-CH 75V 80A TO220-3 Infineon Technologies |
3,205 | - |
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OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 80A (Tc) | 10V | 6.2mOhm @ 73A, 10V | 3.8V @ 70µA | 55 nC @ 10 V | ±20V | 3840 pF @ 37.5 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPP06CNE8N GMOSFET N-CH 85V 100A TO220-3 Infineon Technologies |
4,248 | - |
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OptiMOS™ 2 | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 85 V | 100A (Tc) | 10V | 6.5mOhm @ 100A, 10V | 4V @ 180µA | 138 nC @ 10 V | ±20V | 9240 pF @ 40 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IRF6611MOSFET N-CH 30V 32A DIRECTFET Infineon Technologies |
2,905 | - |
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HEXFET® | DirectFET™ Isometric MX | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 32A (Ta), 150A (Tc) | 4.5V, 10V | 2.6mOhm @ 27A, 10V | 2.25V @ 250µA | 56 nC @ 4.5 V | ±20V | 4860 pF @ 15 V | - | 3.9W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |
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IGLD65R140D2AUMA1GAN HV Infineon Technologies |
4,699 | - |
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CoolGaN™ | 8-LDFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 12A (Tc) | - | - | 1.6V @ 1mA | 2.6 nC @ 3 V | -10V | 130 pF @ 400 V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-LSON-8-1 |
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SPI70N10LMOSFET N-CH 100V 70A TO262-3 Infineon Technologies |
2,947 | - |
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SIPMOS® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 70A (Tc) | 4.5V, 10V | 16mOhm @ 50A, 10V | 2V @ 2mA | 240 nC @ 10 V | ±20V | 4540 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
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IRFU2407MOSFET N-CH 75V 42A IPAK Infineon Technologies |
4,386 | - |
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HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 42A (Tc) | 10V | 26mOhm @ 25A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK (TO-251AA) |
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IRF7456TRPBFMOSFET N-CH 20V 16A 8SO Infineon Technologies |
3,729 | - |
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HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 16A (Ta) | 2.8V, 10V | 6.5mOhm @ 16A, 10V | 2V @ 250µA | 62 nC @ 5 V | ±12V | 3640 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |