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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFH8330TR2PBFMOSFET N-CH 30V 14A 5X6 PQFN Infineon Technologies |
2,197 |
|
Tabla de datos |
- | 8-PowerTDFN | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 17A (Ta), 56A (Tc) | - | 6.6mOhm @ 20A, 10V | 2.35V @ 25µA | 20 nC @ 10 V | - | 1450 pF @ 25 V | - | - | - | - | - | Surface Mount | PQFN (5x6) |
|
IPD50R380CEATMA1MOSFET N-CH 500V 14.1A TO252-3 Infineon Technologies |
2,945 |
|
Tabla de datos |
CoolMOS™ CE | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 14.1A (Tc) | 13V | 380mOhm @ 3.2A, 13V | 3.5V @ 260µA | 24.8 nC @ 10 V | ±20V | 584 pF @ 100 V | - | 98W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
IPLK70R1K4P7ATMA1MOSFET N-CH 700V TDSON-8 Infineon Technologies |
2,392 |
|
Tabla de datos |
CoolMOS™ P7 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-TDSON-8 |
|
SPP11N60S5HKSA1MOSFET N-CH 650V 11A TO220-3 Infineon Technologies |
3,778 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 380mOhm @ 7A, 10V | 5.5V @ 500µA | 54 nC @ 10 V | ±20V | 1460 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
SPI11N60S5BKSA1MOSFET N-CH 600V 11A TO262-3 Infineon Technologies |
2,466 |
|
Tabla de datos |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 380mOhm @ 7A, 10V | 5.5V @ 500µA | 54 nC @ 10 V | ±20V | 1460 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
|
|
IRF2804LPBFMOSFET N-CH 40V 75A TO262 Infineon Technologies |
2,005 |
|
Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 75A (Tc) | - | 2.3mOhm @ 75A, 10V | 4V @ 250µA | 240 nC @ 10 V | - | 6450 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
IRF7705MOSFET P-CH 30V 8A 8TSSOP Infineon Technologies |
2,708 |
|
Tabla de datos |
HEXFET® | 8-TSSOP (0.173", 4.40mm Width) | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 8A (Tc) | 4.5V, 10V | 18mOhm @ 8A, 10V | 2.5V @ 250µA | 88 nC @ 10 V | ±20V | 2774 pF @ 25 V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-TSSOP |
|
ISC0605NLSATMA1TRENCH 40<-<100V Infineon Technologies |
3,409 |
|
Tabla de datos |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 25A (Ta), 195A (Tc) | 4.5V, 10V | 2.3mOhm @ 50A, 10V | 2.3V @ 115µA | 55 nC @ 4.5 V | ±20V | 7500 pF @ 40 V | - | 2.5W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8 |
|
SPB80N04S2L-03MOSFET N-CH 40V 80A TO263-3 Infineon Technologies |
2,723 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 4.5V, 10V | 3.1mOhm @ 80A, 10V | 2V @ 250µA | 213 nC @ 10 V | ±20V | 7930 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
|
SPB80N06S2L-05MOSFET N-CH 55V 80A TO263-3 Infineon Technologies |
4,388 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 4.5V, 10V | 4.5mOhm @ 80A, 10V | 2V @ 250µA | 230 nC @ 10 V | ±20V | 7530 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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