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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BTS244Z E3062AMOSFET N-CH 55V 35A TO220-5-62 Infineon Technologies |
3,419 |
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Tabla de datos |
TEMPFET® | TO-263-5, D2PAK (4 Leads + Tab), TO-263BB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 35A (Tc) | 4.5V, 10V | 13mOhm @ 19A, 10V | 2V @ 130µA | 130 nC @ 10 V | ±20V | 2660 pF @ 25 V | Temperature Sensing Diode | 170W (Tc) | -40°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO220-5-62 |
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IPA60R190E6XKSA1MOSFET N-CH 600V 20.2A TO220-FP Infineon Technologies |
2,747 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 Full Pack | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 20.2A (Tc) | 10V | 190mOhm @ 9.5A, 10V | 3.5V @ 630µA | 63 nC @ 10 V | ±20V | 1400 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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IRF1104STRRMOSFET N-CH 40V 100A D2PAK Infineon Technologies |
2,200 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 9mOhm @ 60A, 10V | 4V @ 250µA | 93 nC @ 10 V | ±20V | 2900 pF @ 25 V | - | 2.4W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRFR120NTRLPBFMOSFET N-CH 100V 9.4A DPAK Infineon Technologies |
19 |
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Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 9.4A (Tc) | 10V | 210mOhm @ 5.6A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±20V | 330 pF @ 25 V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPD068P03L3GBTMA1MOSFET P-CH 30V 70A TO252-3 Infineon Technologies |
3,846 |
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Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 70A (Tc) | 4.5V, 10V | 6.8mOhm @ 70A, 10V | 2V @ 150µA | 91 nC @ 10 V | ±20V | 7720 pF @ 15 V | - | 100W (Tc) | -55°C ~ 155°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPP037N08N3GHKSA1MOSFET N-CH 80V 100A TO220-3 Infineon Technologies |
4,434 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 100A (Tc) | 6V, 10V | 3.75mOhm @ 100A, 10V | 3.5V @ 155µA | 117 nC @ 10 V | ±20V | 8110 pF @ 40 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IRFZ44NSTRRMOSFET N-CH 55V 49A D2PAK Infineon Technologies |
3,224 |
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Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 49A (Tc) | 10V | 17.5mOhm @ 25A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1470 pF @ 25 V | - | 3.8W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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SPA11N60CFDXKSA1MOSFET N-CH 600V 11A TO220-3 Infineon Technologies |
3,358 |
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Tabla de datos |
CoolMOS™ | TO-220-3 Full Pack | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 440mOhm @ 7A, 10V | 5V @ 1.9mA | 64 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-31 |
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IRFZ34EMOSFET N-CH 60V 28A TO220AB Infineon Technologies |
3,970 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 28A (Tc) | 10V | 42mOhm @ 17A, 10V | 4V @ 250µA | 30 nC @ 10 V | ±20V | 680 pF @ 25 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRL520NSMOSFET N-CH 100V 10A D2PAK Infineon Technologies |
3,967 |
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Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 10A (Tc) | 4V, 10V | 180mOhm @ 6A, 10V | 2V @ 250µA | 20 nC @ 5 V | ±16V | 440 pF @ 25 V | - | 3.8W (Ta), 48W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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