制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IPD048N06L3GBTMA1MOSFET N-CH 60V 90A TO252-3 Infineon Technologies |
4,179 | - |
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OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 90A (Tc) | 4.5V, 10V | 4.8mOhm @ 90A, 10V | 2.2V @ 58µA | 50 nC @ 4.5 V | ±20V | 8400 pF @ 30 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IRFR5505GTRPBFMOSFET P-CH 55V 18A DPAK Infineon Technologies |
2,944 | - |
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HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 55 V | 18A (Tc) | 10V | 110mOhm @ 9.6A, 10V | 4V @ 250µA | 32 nC @ 10 V | ±20V | 650 pF @ 25 V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRL3202SMOSFET N-CH 20V 48A D2PAK Infineon Technologies |
4,377 | - |
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HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 48A (Tc) | 4.5V, 7V | 16mOhm @ 29A, 7V | 700mV @ 250µA (Min) | 43 nC @ 4.5 V | ±10V | 2000 pF @ 15 V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D2PAK |
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IRF7807ZMOSFET N-CH 30V 11A 8SO Infineon Technologies |
3,556 | - |
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HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta) | 4.5V, 10V | 13.8mOhm @ 11A, 10V | 2.25V @ 250µA | 11 nC @ 4.5 V | ±20V | 770 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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BSC057N03LSGATMA1MOSFET N-CH 30V 17A/71A TDSON Infineon Technologies |
3,095 | - |
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OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 17A (Ta), 71A (Tc) | 4.5V, 10V | 5.7mOhm @ 30A, 10V | 2.2V @ 250µA | 30 nC @ 10 V | ±20V | 2400 pF @ 15 V | - | 2.5W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-5 |
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IRFH7921TR2PBFMOSFET N-CH 30V 15A/34A PQFN Infineon Technologies |
4,682 | - |
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HEXFET® | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 15A (Ta), 34A (Tc) | 4.5V, 10V | 8.5mOhm @ 15A, 10V | 2.35V @ 25µA | 14 nC @ 4.5 V | ±20V | 1210 pF @ 15 V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PQFN (5x6) Single Die |
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IRFB4310ZPBFXKMA1TRENCH >=100V Infineon Technologies |
3,518 | - |
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- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 10V | 6mOhm @ 75A, 10V | 4V @ 1.037mA | 170 nC @ 10 V | ±20V | 6860 pF @ 50 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRF6626TR1MOSFET N-CH 30V 16A DIRECTFET Infineon Technologies |
4,582 | - |
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HEXFET® | DirectFET™ Isometric ST | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 16A (Ta), 72A (Tc) | 4.5V, 10V | 5.4mOhm @ 16A, 10V | 2.35V @ 250µA | 29 nC @ 4.5 V | ±20V | 2380 pF @ 15 V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ ST |
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IRFR4105TRRMOSFET N-CH 55V 27A DPAK Infineon Technologies |
4,626 | - |
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HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 27A (Tc) | 10V | 45mOhm @ 16A, 10V | 4V @ 250µA | 34 nC @ 10 V | ±20V | 700 pF @ 25 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRFU3711MOSFET N-CH 20V 100A IPAK Infineon Technologies |
4,650 | - |
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HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 100A (Tc) | 4.5V, 10V | 6.5mOhm @ 15A, 10V | 3V @ 250µA | 44 nC @ 4.5 V | ±20V | 2980 pF @ 10 V | - | 2.5W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK (TO-251AA) |