制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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BSC080N03LSGATMA1MOSFET N-CH 30V 14A/53A TDSON Infineon Technologies |
4,370 | - |
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OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta), 53A (Tc) | 4.5V, 10V | 8mOhm @ 30A, 10V | 2.2V @ 250µA | 21 nC @ 10 V | ±20V | 1700 pF @ 15 V | - | 2.5W (Ta), 35W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-5 |
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IQE057N10NM6SCATMA1TRENCH >=100V Infineon Technologies |
3,127 | - |
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- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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SPB100N03S2-03MOSFET N-CH 30V 100A TO263-3 Infineon Technologies |
3,486 | - |
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OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 100A (Tc) | 10V | 3mOhm @ 80A, 10V | 4V @ 250µA | 150 nC @ 10 V | ±20V | 7020 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IPA057N06N3GXKSA1MOSFET N-CH 60V 60A TO220-3-31 Infineon Technologies |
2,993 | - |
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OptiMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 60A (Tc) | 10V | 5.7mOhm @ 60A, 10V | 4V @ 58µA | 82 nC @ 10 V | ±20V | 6600 pF @ 30 V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-31 |
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BSB056N10NN3GXUMA2TRENCH >=100V Infineon Technologies |
2,809 | - |
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- | DirectFET™ Isometric MN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 9A (Ta), 83A (Tc) | 6V, 10V | 5.6mOhm @ 30A, 10V | 3.5V @ 100µA | 74 nC @ 10 V | ±20V | 5500 pF @ 50 V | - | 2.8W (Ta), 78W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | MG-WDSON-5-3 |
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BSB056N10NN3GXUMA3TRENCH >=100V Infineon Technologies |
4,273 | - |
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- | DirectFET™ Isometric MN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 9A (Ta), 83A (Tc) | 6V, 10V | 5.6mOhm @ 30A, 10V | 3.5V @ 100µA | 74 nC @ 10 V | ±20V | 5500 pF @ 50 V | - | 2.8W (Ta), 78W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | MG-WDSON-5-3 |
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IPB80N03S4L02ATMA1MOSFET N-CH 30V 80A TO263-3 Infineon Technologies |
3,046 | - |
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OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 2.4mOhm @ 80A, 10V | 2.2V @ 90µA | 140 nC @ 10 V | ±16V | 9750 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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SPP70N10LMOSFET N-CH 100V 70A TO220-3 Infineon Technologies |
4,004 | - |
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SIPMOS® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 70A (Tc) | 4.5V, 10V | 16mOhm @ 50A, 10V | 2V @ 2mA | 240 nC @ 10 V | ±20V | 4540 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IRFU5410MOSFET P-CH 100V 13A IPAK Infineon Technologies |
4,317 | - |
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HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 13A (Tc) | 10V | 205mOhm @ 7.8A, 10V | 4V @ 250µA | 58 nC @ 10 V | ±20V | 760 pF @ 25 V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK (TO-251AA) |
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IPP08CN10N GMOSFET N-CH 100V 95A TO220-3 Infineon Technologies |
2,583 | - |
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OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 95A (Tc) | 10V | 8.5mOhm @ 95A, 10V | 4V @ 130µA | 100 nC @ 10 V | ±20V | 6660 pF @ 50 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |