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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AUIRFN8405TRMOSFET N-CH 40V 95A PQFN Infineon Technologies |
4,753 |
|
Tabla de datos |
HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 40 V | 95A (Tc) | 10V | 2mOhm @ 50A, 10V | 3.9V @ 100µA | 117 nC @ 10 V | ±20V | 5142 pF @ 25 V | - | 3.3W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PQFN (5x6) |
|
IQE057N10NM6CGSCATMA1TRENCH >=100V Infineon Technologies |
3,078 |
|
Tabla de datos |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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AUIRF4104STRLMOSFET N-CH 40V 75A D2PAK Infineon Technologies |
2,135 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 75A (Tc) | - | 5.5mOhm @ 75A, 10V | 4V @ 250µA | 100 nC @ 10 V | - | 3000 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IRF7326D2TRMOSFET P-CH 30V 3.6A 8SO Infineon Technologies |
3,243 |
|
Tabla de datos |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 3.6A (Ta) | 4.5V, 10V | 100mOhm @ 1.8A, 10V | 1V @ 250µA | 25 nC @ 10 V | ±20V | 440 pF @ 25 V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
IRFR3707ZTRPBFMOSFET N-CH 30V 56A DPAK Infineon Technologies |
3,633 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 56A (Tc) | 4.5V, 10V | 9.5mOhm @ 15A, 10V | 2.25V @ 25µA | 14 nC @ 4.5 V | ±20V | 1150 pF @ 15 V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
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IRLR2705TRLPBFMOSFET N-CH 55V 28A DPAK Infineon Technologies |
3,433 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 28A (Tc) | 4V, 10V | 40mOhm @ 17A, 10V | 2V @ 250µA | 25 nC @ 5 V | ±16V | 880 pF @ 25 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
IPB052N04NGATMA1MOSFET N-CH 40V 70A D2PAK Infineon Technologies |
4,268 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 70A (Tc) | 10V | 5.2mOhm @ 70A, 10V | 4V @ 33µA | 42 nC @ 10 V | ±20V | 3300 pF @ 20 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
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IPB60R950C6ATMA1MOSFET N-CH 600V 4.4A D2PAK Infineon Technologies |
3,039 |
|
Tabla de datos |
CoolMOS™ C6 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 4.4A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 3.5V @ 130µA | 13 nC @ 10 V | ±20V | 280 pF @ 100 V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
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IPB70N10S3L12ATMA2MOSFET_(75V 120V( Infineon Technologies |
3,616 |
|
Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 70A (Tc) | 4.5V, 10V | 12.1mOhm @ 70A, 10V | 2.4V @ 83µA | 80 nC @ 10 V | ±20V | 5570 pF @ 25 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-3-2 |
|
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BSB028N06NN3GXUMA2TRENCH 40<-<100V Infineon Technologies |
2,410 |
|
Tabla de datos |
- | DirectFET™ Isometric MN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 22A (Ta), 90A (Tc) | 10V | 2.8mOhm @ 30A, 10V | 4V @ 102µA | 143 nC @ 10 V | ±20V | 12000 pF @ 30 V | - | 2.2W (Ta), 78W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | MG-WDSON-5-3 |
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