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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPB260N06N3GATMA1MOSFET N-CH 60V 27A D2PAK Infineon Technologies |
3,090 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 27A (Tc) | 10V | 25.7mOhm @ 27A, 10V | 4V @ 11µA | 15 nC @ 10 V | ±20V | 1200 pF @ 30 V | - | 36W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
IRFH3702TRPBFMOSFET N-CH 30V 16A/42A 8PQFN Infineon Technologies |
3,058 |
|
Tabla de datos |
HEXFET® | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 16A (Ta), 42A (Tc) | 4.5V, 10V | 7.1mOhm @ 16A, 10V | 2.35V @ 25µA | 14 nC @ 4.5 V | ±20V | 1510 pF @ 15 V | - | 2.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (3x3) |
|
BSC882N03LSGATMA1MOSFET N-CH 34V 8TDSON Infineon Technologies |
4,164 |
|
Tabla de datos |
- | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 34 V | - | 10V | 4.2mOhm @ 30A, 10V | 2.2V @ 250µA | 46 nC @ 10 V | ±20V | 3700 pF @ 15 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-1 |
|
IPP057N08N3GHKSA1MOSFET N-CH 80V 80A TO220-3 Infineon Technologies |
3,657 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 80A (Tc) | 6V, 10V | 5.7mOhm @ 80A, 10V | 3.5V @ 90µA | 69 nC @ 10 V | ±20V | 4750 pF @ 40 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
IRLU2703MOSFET N-CH 30V 23A I-PAK Infineon Technologies |
3,215 |
|
Tabla de datos |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 23A (Tc) | 4.5V, 10V | 45mOhm @ 14A, 10V | 1V @ 250µA | 15 nC @ 4.5 V | ±16V | 450 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
|
IRFU3518-701PBFMOSFET N-CH 80V 38A IPAK Infineon Technologies |
3,103 |
|
Tabla de datos |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 38A (Tc) | 10V | 29mOhm @ 18A, 10V | 4V @ 250µA | 56 nC @ 10 V | ±20V | 1710 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK (TO-251AA) |
|
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IPP072N10N3GHKSA1MOSFET N-CH 100V 80A TO220-3 Infineon Technologies |
3,871 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 80A (Tc) | 6V, 10V | 7.2mOhm @ 80A, 10V | 3.5V @ 90µA | 68 nC @ 10 V | ±20V | 4910 pF @ 50 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
IRLBD59N04ETRLPMOSFET N-CH 40V 59A TO263-5 Infineon Technologies |
2,604 |
|
Tabla de datos |
HEXFET® | TO-263-6, D2PAK (5 Leads + Tab), TO-263BA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 59A (Tc) | 5V, 10V | 18mOhm @ 35A, 10V | 2V @ 250µA | 50 nC @ 5 V | ±10V | 2190 pF @ 25 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-5 |
|
|
IAUC120N06S5L015ATMA1MOSFET_)40V 60V) Infineon Technologies |
4,894 |
|
Tabla de datos |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 235A (Tj) | 4.5V, 10V | 1.5mOhm @ 60A, 10V | 2.2V @ 94µA | 114 nC @ 10 V | ±20V | 8193 pF @ 30 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TDSON-8-43 |
|
|
IPB35N10S3L26ATMA2MOSFET_(75V 120V( Infineon Technologies |
2,284 |
|
Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 35A (Tc) | 4.5V, 10V | 26.3mOhm @ 35A, 10V | 2.4V @ 39µA | 39 nC @ 10 V | ±20V | 2700 pF @ 25 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-3-2 |
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