Hola!! Ahora
+8619886240609(Alice)
+8619886240609(Alice)
Mi cuenta
FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPI180N10N3GXKSA1MOSFET N-CH 100V 43A TO262-3 Infineon Technologies |
4,224 |
|
Tabla de datos |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 43A (Tc) | 6V, 10V | 18mOhm @ 33A, 10V | 3.5V @ 33µA | 25 nC @ 10 V | ±20V | 1800 pF @ 50 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
|
SPP06N60C3HKSA1MOSFET N-CH 650V 6.2A TO220-3 Infineon Technologies |
4,089 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 6.2A (Tc) | 10V | 750mOhm @ 3.9A, 10V | 3.9V @ 260µA | 31 nC @ 10 V | ±20V | 620 pF @ 25 V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
IRF7416GTRPBFMOSFET P-CH 30V 10A 8SO Infineon Technologies |
4,485 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 10A (Ta) | 4.5V, 10V | 20mOhm @ 5.6A, 10V | 1V @ 250µA | 92 nC @ 10 V | ±20V | 1700 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
IRFHM4234TRPBFMOSFET N-CH 25V 20A PQFN Infineon Technologies |
4,881 |
|
Tabla de datos |
FASTIRFET™, HEXFET® | 8-TQFN Exposed Pad | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 20A (Ta) | 4.5V, 10V | 4.4mOhm @ 30A, 10V | 2.1V @ 25µA | 17 nC @ 10 V | ±20V | 1011 pF @ 13 V | - | 2.8W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | - |
|
IPN70R1K2P7SATMA1MOSFET N-CH 700V 4.5A SOT223 Infineon Technologies |
3,381 |
|
Tabla de datos |
CoolMOS™ P7 | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 700 V | 4.5A (Tc) | 10V | 1.2Ohm @ 900mA, 10V | 3.5V @ 40µA | 4.8 nC @ 10 V | ±16V | 174 pF @ 400 V | - | 6.3W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223 |
|
SPB47N10MOSFET N-CH 100V 47A TO263-3 Infineon Technologies |
2,381 |
|
Tabla de datos |
SIPMOS® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 47A (Tc) | 10V | 33mOhm @ 33A, 10V | 4V @ 2mA | 105 nC @ 10 V | ±20V | 2500 pF @ 25 V | - | 175W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
|
SPB47N10LMOSFET N-CH 100V 47A TO263-3 Infineon Technologies |
2,765 |
|
Tabla de datos |
SIPMOS® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 47A (Tc) | 4.5V, 10V | 26mOhm @ 33A, 10V | 2V @ 2mA | 135 nC @ 10 V | ±20V | 2500 pF @ 25 V | - | 175W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
|
IPP040N06N3GHKSA1MOSFET N-CH 60V 90A TO220-3 Infineon Technologies |
4,791 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 90A (Tc) | 10V | 4mOhm @ 90A, 10V | 4V @ 90µA | 98 nC @ 10 V | ±20V | 11000 pF @ 30 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
|
IPB80N06S2L-H5MOSFET N-CH 55V 80A TO263-3 Infineon Technologies |
4,615 |
|
Tabla de datos |
OptiMOS™ 3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 4.5V, 10V | 4.7mOhm @ 80A, 10V | 2V @ 250µA | 190 nC @ 10 V | ±20V | 5000 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
AUIRFR2905ZTRLMOSFET N-CH 55V 42A DPAK Infineon Technologies |
2,365 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | 10V | 14.5mOhm @ 36A, 10V | 4V @ 250µA | 44 nC @ 10 V | ±20V | 1380 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
- Envío rápido La puerta rápida y convenienteEntrega a domicilio.
- Seguridad de pago Más de 5 diferentes métodos de pago seguro.
- Estricto Control de calidad 365 días de servicio post-venta y garantía
- Simple y profesional Soluciones de adquisición electrónica integral.
