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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPD30N03S2L10ATMA1MOSFET N-CH 30V 30A TO252-3 Infineon Technologies |
4,022 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 10mOhm @ 30A, 10V | 2V @ 50µA | 42 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
|
IPSA70R1K2P7SAKMA1MOSFET N-CH 700V 4.5A TO251-3 Infineon Technologies |
2 |
|
Tabla de datos |
CoolMOS™ P7 | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 700 V | 4.5A (Tc) | 10V | 1.2Ohm @ 900mA, 10V | 3.5V @ 40µA | 4.8 nC @ 400 V | ±16V | 174 pF @ 400 V | - | 25W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
|
|
IRFR9N20DTRLMOSFET N-CH 200V 9.4A DPAK Infineon Technologies |
3,018 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 9.4A (Tc) | 10V | 380mOhm @ 5.6A, 10V | 5.5V @ 250µA | 27 nC @ 10 V | ±30V | 560 pF @ 25 V | - | 86W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
IRF7807D1TRPBFMOSFET N-CH 30V 8.3A 8SO Infineon Technologies |
4,099 |
|
Tabla de datos |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | 1V @ 250µA | 17 nC @ 5 V | ±12V | - | Schottky Diode (Isolated) | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
|
IRF7353D2TRPBFMOSFET N-CH 30V 6.5A 8SO Infineon Technologies |
2,717 |
|
Tabla de datos |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 6.5A (Ta) | 4.5V, 10V | 29mOhm @ 5.8A, 10V | 1V @ 250µA | 33 nC @ 10 V | ±20V | 650 pF @ 25 V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
IPB45P03P4L11ATMA2MOSFET_(20V 40V) PG-TO263-3 Infineon Technologies |
2,440 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 45A (Tc) | 4.5V, 10V | 10.8mOhm @ 45A, 10V | 2V @ 85µA | 55 nC @ 10 V | +5V, -16V | 3770 pF @ 25 V | - | 58W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-3-2 |
|
IRF4905SPBFMOSFET P-CH 55V 42A D2PAK Infineon Technologies |
2,028 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | 10V | 20mOhm @ 42A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±20V | 3500 pF @ 25 V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D2PAK |
|
IPP080N06N GMOSFET N-CH 60V 80A TO220-3 Infineon Technologies |
4,478 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 10V | 8mOhm @ 80A, 10V | 4V @ 150µA | 93 nC @ 10 V | ±20V | 3500 pF @ 30 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
IRF7703MOSFET P-CH 40V 6A 8TSSOP Infineon Technologies |
3,973 |
|
Tabla de datos |
HEXFET® | 8-TSSOP (0.173", 4.40mm Width) | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 6A (Ta) | 4.5V, 10V | 28mOhm @ 6A, 10V | 3V @ 250µA | 62 nC @ 4.5 V | ±20V | 5220 pF @ 25 V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-TSSOP |
|
IRLU3636PBFMOSFET N-CH 60V 50A IPAK Infineon Technologies |
4,694 |
|
Tabla de datos |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 4.5V, 10V | 6.8mOhm @ 50A, 10V | 2.5V @ 100µA | 49 nC @ 4.5 V | ±16V | 3779 pF @ 50 V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
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