制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IRFR12N25DTRRPMOSFET N-CH 250V 14A DPAK Infineon Technologies |
3,570 | - |
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HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 14A (Tc) | 10V | 260mOhm @ 8.4A, 10V | 5V @ 250µA | 35 nC @ 10 V | ±30V | 810 pF @ 25 V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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SPB10N10MOSFET N-CH 100V 10.3A TO263-3 Infineon Technologies |
2,122 | - |
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SIPMOS® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 10.3A (Tc) | 10V | 170mOhm @ 7.8A, 10V | 4V @ 21µA | 19.4 nC @ 10 V | ±20V | 426 pF @ 25 V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IPB06N03LATMOSFET N-CH 25V 50A TO263-3 Infineon Technologies |
2,037 | - |
|
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OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 50A (Tc) | 4.5V, 10V | 5.9mOhm @ 30A, 10V | 2V @ 40µA | 22 nC @ 5 V | ±20V | 2653 pF @ 15 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IRFR2407TRRPBFMOSFET N-CH 75V 42A DPAK Infineon Technologies |
3,044 | - |
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HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 42A (Tc) | 10V | 26mOhm @ 25A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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SPN03N60S5MOSFET N-CH 600V 700MA SOT223-4 Infineon Technologies |
4,347 | - |
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CoolMOS™ | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 700mA (Ta) | 10V | 1.4Ohm @ 2A, 10V | 5.5V @ 135µA | 12.8 nC @ 10 V | ±20V | 440 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |
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IRFR3504TRLPBFMOSFET N-CH 40V 30A DPAK Infineon Technologies |
2,381 | - |
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HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 30A (Tc) | 10V | 9.2mOhm @ 30A, 10V | 4V @ 250µA | 71 nC @ 10 V | ±20V | 2150 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRFR3504TRRPBFMOSFET N-CH 40V 30A DPAK Infineon Technologies |
4,341 | - |
|
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HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 30A (Tc) | 10V | 9.2mOhm @ 30A, 10V | 4V @ 250µA | 71 nC @ 10 V | ±20V | 2150 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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BSC106N025S GMOSFET N-CH 25V 13A/30A TDSON Infineon Technologies |
4,135 | - |
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OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 13A (Ta), 30A (Tc) | 4.5V, 10V | 10.6mOhm @ 30A, 10V | 2V @ 20µA | 11 nC @ 5 V | ±20V | 1370 pF @ 15 V | - | 2.8W (Ta), 43W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-1 |
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IPD65R950C6ATMA1MOSFET N-CH 650V 4.5A TO252-3 Infineon Technologies |
4,550 | - |
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CoolMOS™ C6 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 4.5A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 3.5V @ 200µA | 15.3 nC @ 10 V | ±20V | 328 pF @ 100 V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPB09N03LATMOSFET N-CH 25V 50A TO263-3 Infineon Technologies |
3,417 | - |
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OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 50A (Tc) | 4.5V, 10V | 8.9mOhm @ 30A, 10V | 2V @ 20µA | 13 nC @ 5 V | ±20V | 1642 pF @ 15 V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |