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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFH7934TRPBFMOSFET N-CH 30V 24A/76A 8PQFN Infineon Technologies |
3,672 |
|
Tabla de datos |
HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 24A (Ta), 76A (Tc) | 4.5V, 10V | 3.5mOhm @ 24A, 10V | 2.35V @ 50µA | 30 nC @ 4.5 V | ±20V | 3100 pF @ 15 V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
|
SPD30N06S2-15MOSFET N-CH 55V 30A TO252-3 Infineon Technologies |
2,015 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 30A (Tc) | 10V | 14.7mOhm @ 30A, 10V | 4V @ 80µA | 52 nC @ 10 V | ±20V | 2070 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
|
IRLML6401GTRPBFMOSFET P-CH 12V 4.3A SOT-23-3 Infineon Technologies |
2,009 |
|
Tabla de datos |
HEXFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 4.3A (Ta) | 1.8V, 4.5V | 50mOhm @ 4.3A, 4.5V | 950mV @ 250µA | 15 nC @ 5 V | ±8V | 830 pF @ 10 V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Micro3™/SOT-23 |
|
IRLML6402GTRPBFMOSFET P-CH 20V 3.7A SOT23 Infineon Technologies |
2,392 |
|
Tabla de datos |
HEXFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 3.7A (Ta) | 2.5V, 4.5V | 65mOhm @ 3.7A, 4.5V | 1.2V @ 250µA | 12 nC @ 5 V | ±12V | 633 pF @ 10 V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Micro3™/SOT-23 |
|
IPAN60R800CEXKSA1MOSFET N-CH 600V 8.4A TO220 Infineon Technologies |
4,882 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 8.4A (Tc) | 10V | 800mOhm @ 2A, 10V | 3.5V @ 170µA | 17.2 nC @ 10 V | ±20V | 373 pF @ 100 V | - | 27W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
|
IPF06N03LA GMOSFET N-CH 25V 50A TO252-3 Infineon Technologies |
3,424 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 50A (Tc) | 4.5V, 10V | 5.7mOhm @ 30A, 10V | 2V @ 40µA | 22 nC @ 5 V | ±20V | 2653 pF @ 15 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-23 |
|
|
IPFH6N03LA GMOSFET N-CH 25V 50A TO252-3 Infineon Technologies |
2,137 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 50A (Tc) | 4.5V, 10V | 6.2mOhm @ 50A, 10V | 2V @ 30µA | 19 nC @ 5 V | ±20V | 2390 pF @ 15 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-23 |
|
SPP02N60C3HKSA1MOSFET N-CH 650V 1.8A TO220-3 Infineon Technologies |
4,638 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 1.8A (Tc) | 10V | 3Ohm @ 1.1A, 10V | 3.9V @ 80µA | 12.5 nC @ 10 V | ±20V | 200 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
IPB065N03LGATMA1MOSFET N-CH 30V 50A D2PAK Infineon Technologies |
3,884 |
|
Tabla de datos |
OptiMOS™ 3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 6.5mOhm @ 30A, 10V | 2.2V @ 250µA | 23 nC @ 10 V | ±20V | 2400 pF @ 15 V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
|
BUZ73E3046XKMOSFET N-CH 200V 7A TO220-3 Infineon Technologies |
2,626 |
|
Tabla de datos |
SIPMOS® | TO-220-3 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 200 V | 7A (Tc) | 10V | 400mOhm @ 4.5A, 10V | 4V @ 1mA | - | ±20V | 530 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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