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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPA075N15N3GXKSA1MOSFET N-CH 150V 43A TO220-3 Infineon Technologies |
61 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 43A (Tc) | 8V, 10V | 7.5mOhm @ 43A, 10V | 4V @ 270µA | 93 nC @ 10 V | ±20V | 7280 pF @ 75 V | - | 39W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
IMZA65R039M1HXKSA1SILICON CARBIDE MOSFET, PG-TO247 Infineon Technologies |
83 |
|
Tabla de datos |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 50A (Tc) | 18V | 50mOhm @ 25A, 18V | 5.7V @ 7.5mA | 41 nC @ 18 V | +20V, -2V | 1393 pF @ 400 V | - | 176W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-3 |
|
ISP20EP10LMXTSA1SMALL SIGNAL MOSFETS PG-SOT223-4 Infineon Technologies |
1,000 |
|
Tabla de datos |
OptiMOS™ | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 650mA (Ta), 990mA (Tc) | 4.5V, 10V | 2Ohm @ 600mA, 10V | 2V @ 78µA | 3.5 nC @ 10 V | ±20V | 170 pF @ 50 V | - | 1.8W (Ta), 4.2W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |
|
|
IRF60B217MOSFET N-CH 60V 60A TO220AB Infineon Technologies |
3,987 |
|
Tabla de datos |
StrongIRFET™ | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 60A (Tc) | 6V, 10V | 9mOhm @ 36A, 10V | 3.7V @ 50µA | 66 nC @ 10 V | ±20V | 2230 pF @ 25 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
|
IPA60R280P7XKSA1MOSFET N-CH 600V 12A TO220 Infineon Technologies |
3,701 |
|
Tabla de datos |
CoolMOS™ P7 | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 280mOhm @ 3.8A, 10V | 4V @ 190µA | 18 nC @ 10 V | ±20V | 761 pF @ 400 V | - | 24W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
IPI029N06NAKSA1MOSFET N-CH 60V 24A/100A TO262-3 Infineon Technologies |
26 |
|
Tabla de datos |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 24A (Ta), 100A (Tc) | 6V, 10V | 2.9mOhm @ 100A, 10V | 2.8V @ 75µA | 56 nC @ 10 V | ±20V | 4100 pF @ 30 V | - | 3W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
|
IPDD60R190G7XTMA1MOSFET N-CH 600V 13A HDSOP-10 Infineon Technologies |
65 |
|
Tabla de datos |
CoolMOS™ G7 | 10-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 10V | 190mOhm @ 4.2A, 10V | 4V @ 210µA | 18 nC @ 10 V | ±20V | 718 pF @ 400 V | - | 76W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-10-1 |
|
IPDD60R170CFD7XTMA1MOSFET N-CH 600V 19A HDSOP-10 Infineon Technologies |
37 |
|
Tabla de datos |
CoolMOS™ CFD7 | 10-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 19A (Tc) | - | 170mOhm @ 4.9A, 10V | 4.5V @ 240µA | 23 nC @ 10 V | ±20V | 1016 pF @ 400 V | - | 137W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-10-1 |
|
IPW65R190C7XKSA1MOSFET N-CH 650V 13A TO247-3 Infineon Technologies |
85 |
|
Tabla de datos |
CoolMOS™ C7 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 13A (Tc) | 10V | 190mOhm @ 5.7A, 10V | 4V @ 290µA | 23 nC @ 10 V | ±20V | 1150 pF @ 400 V | - | 72W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3 |
|
IPW60R125CFD7XKSA1MOSFET N-CH 600V 18A TO247-3 Infineon Technologies |
30 |
|
Tabla de datos |
OptiMOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 125mOhm @ 7.8A, 10V | 4.5V @ 390µA | 36 nC @ 10 V | ±20V | 1503 pF @ 400 V | - | 92W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3 |
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