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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ISP75DP06LMXTSA1MOSFET P-CH 60V 1.1A SOT223-4 Infineon Technologies |
1,011 |
|
Tabla de datos |
OptiMOS™ | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 1.1A (Ta) | 4.5V, 10V | 750mOhm @ 1.1A, 10V | 2V @ 77µA | 4 nC @ 10 V | ±20V | 120 pF @ 30 V | - | 1.8W (Ta), 4.2W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |
|
IPA50R500CEXKSA2MOSFET N-CH 500V 5.4A TO220 Infineon Technologies |
34 |
|
Tabla de datos |
CoolMOS™ CE | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 5.4A (Tc) | 13V | 500mOhm @ 2.3A, 13V | 3.5V @ 200µA | 18.7 nC @ 10 V | ±20V | 433 pF @ 100 V | - | 28W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-FP |
|
IPD42DP15LMATMA1TRENCH >=100V PG-TO252-3 Infineon Technologies |
75 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 1.7A (Ta), 9A (Tc) | 4.5V, 10V | 420mOhm @ 8.2A, 10V | 2V @ 1.04mA | 43 nC @ 10 V | ±20V | 2100 pF @ 75 V | - | 3W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
IPP082N10NF2SAKMA1TRENCH >=100V Infineon Technologies |
68 |
|
Tabla de datos |
StrongIRFET™ 2 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 15A (Ta), 77A (Tc) | 6V, 10V | 8.2mOhm @ 50A, 10V | 3.8V @ 46µA | 42 nC @ 10 V | ±20V | 2000 pF @ 50 V | - | 3.8W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
IPP040N06N3GXKSA1MOSFET N-CH 60V 90A TO220-3 Infineon Technologies |
55 |
|
- |
OptiMOS™ | TO-220-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 60 V | 90A (Tc) | 10V | 4mOhm @ 90A, 10V | 4V @ 90µA | 98 nC @ 10 V | ±20V | 11000 pF @ 30 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
|
IPA60R280CFD7XKSA1MOSFET N-CH 650V 6A TO220 Infineon Technologies |
30 |
|
Tabla de datos |
CoolMOS™ CFD7 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 6A (Tc) | 10V | 280mOhm @ 3.6A, 10V | 4.5V @ 180µA | 18 nC @ 10 V | ±20V | 807 pF @ 400 V | - | 24W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
|
IPA60R230P6XKSA1MOSFET N-CH 600V 16.8A TO220-FP Infineon Technologies |
90 |
|
Tabla de datos |
CoolMOS™ P6 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 16.8A (Tc) | 10V | 230mOhm @ 6.4A, 10V | 4.5V @ 530µA | 31 nC @ 10 V | ±20V | 1450 pF @ 100 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
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IPA029N06NXKSA1MOSFET N-CH 60V 84A TO220-FP Infineon Technologies |
92 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 84A (Tc) | 6V, 10V | 2.9mOhm @ 84A, 10V | 3.3V @ 75µA | 66 nC @ 10 V | ±20V | 5125 pF @ 30 V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
IPW60R170CFD7XKSA1MOSFET N-CH 650V 14A TO247-3 Infineon Technologies |
71 |
|
Tabla de datos |
CoolMOS™ CFD7 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 14A (Tc) | 10V | 170mOhm @ 6A, 10V | 4.5V @ 300µA | 28 nC @ 10 V | ±20V | 1199 pF @ 400 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-21 |
|
IPW60R160C6FKSA1MOSFET N-CH 600V 23.8A TO247-3 Infineon Technologies |
56 |
|
Tabla de datos |
CoolMOS™ | TO-247-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 23.8A (Tc) | 10V | 160mOhm @ 11.3A, 10V | 3.5V @ 750µA | 75 nC @ 10 V | ±20V | 1660 pF @ 100 V | - | 176W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
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