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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    FDMC7200

    FDMC7200

    MOSFET 2N-CH 30V 6A/8A 8PWR33

    onsemi

    3,000
    RFQ
    FDMC7200

    Tabla de datos

    PowerTrench® 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 6A, 8A 23.5mOhm @ 6A, 10V 3V @ 250µA 10nC @ 10V 660pF @ 15V 700mW, 900mW -55°C ~ 150°C (TJ) - - Surface Mount 8-Power33 (3x3)
    US6M1TR

    US6M1TR

    MOSFET N/P-CH 30V/20V 1.4A TUMT6

    Rohm Semiconductor

    11,776
    RFQ
    US6M1TR

    Tabla de datos

    - 6-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V, 20V 1.4A, 1A 240mOhm @ 1.4A, 10V 2.5V @ 1mA 2nC @ 5V 70pF @ 10V 1W 150°C (TJ) - - Surface Mount TUMT6
    US6J2TR

    US6J2TR

    MOSFET 2P-CH 20V 1A TUMT6

    Rohm Semiconductor

    4,354
    RFQ
    US6J2TR

    Tabla de datos

    - 6-SMD, Flat Leads Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 1A 390mOhm @ 1A, 4.5V 2V @ 1mA 2.1nC @ 4.5V 150pF @ 10V 1W 150°C (TJ) - - Surface Mount TUMT6
    SQ3985EV-T1_BE3

    SQ3985EV-T1_BE3

    MOSFET 2P-CH 20V 3.9A 6TSOP

    Vishay Siliconix

    2,867
    RFQ
    SQ3985EV-T1_BE3

    Tabla de datos

    TrenchFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 20V 3.9A (Tc) 145mOhm @ 2.8A, 4.5V 1.5V @ 250µA 4.6nC @ 10V 350pF @ 10V 3W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 6-TSOP
    PJL9602_R2_00001

    PJL9602_R2_00001

    MOSFET N/P-CH 30V 6.1A 8SOP

    Panjit International Inc.

    2,159
    RFQ
    PJL9602_R2_00001

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Complementary - 30V 6.1A (Ta), 6A (Ta) 28mOhm @ 6A, 10V, 30mOhm @ 4A, 10V 2.1V @ 250µA, 2.5V @ 250µA 7.8nC @ 10V, 4.5V 343pF @ 15V, 870pF @ 15V 1.7W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
    MCQD05N06-TP

    MCQD05N06-TP

    MOSFET 2N-CH 60V 5A 8SOP

    Micro Commercial Co

    337
    RFQ
    MCQD05N06-TP

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 5A 44mOhm @ 5A, 10V 2.5V @ 250µA 15nC @ 10V 800pF @ 30V 3.1W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
    CSD87333Q3D

    CSD87333Q3D

    MOSFET 2N-CH 30V 15A 8VSON

    Texas Instruments

    4,652
    RFQ
    CSD87333Q3D

    Tabla de datos

    NexFET™ 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical Logic Level Gate, 5V Drive 30V 15A 14.3mOhm @ 4A, 8V 1.2V @ 250µA 4.6nC @ 4.5V 662pF @ 15V 6W 125°C (TJ) - - Surface Mount 8-VSON (3.3x3.3)
    SH8K25GZ0TB

    SH8K25GZ0TB

    MOSFET 2N-CH 40V 5.2A 8SOP

    Rohm Semiconductor

    1,770
    RFQ
    SH8K25GZ0TB

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 5.2A (Ta) 85mOhm @ 5.2A, 10V 2.5V @ 1mA 1.7nC @ 5V 100pF @ 10V 2W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
    DMN6022SSD-13

    DMN6022SSD-13

    MOSFET 2N-CH 60V 6A 8SO

    Diodes Incorporated

    2,373
    RFQ
    DMN6022SSD-13

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 6A (Ta), 14A (Tc) 29mOhm @ 5A, 10V 3V @ 250µA 32nC @ 10V 2110pF @ 30V 1.2W (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount 8-SO
    ECH8655R-TL-H

    ECH8655R-TL-H

    MOSFET 2N-CH 24V 9A 8ECH

    onsemi

    1,350
    RFQ
    ECH8655R-TL-H

    Tabla de datos

    - 8-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 24V 9A 17mOhm @ 4.5A, 4.5V - 16.8nC @ 10V - 1.5W 150°C (TJ) - - Surface Mount 8-ECH
    DMG4511SK4-13

    DMG4511SK4-13

    MOSFET N/P-CH 35V 5.3A TO252-4L

    Diodes Incorporated

    2,465
    RFQ
    DMG4511SK4-13

    Tabla de datos

    - TO-252-5, DPAK (4 Leads + Tab), TO-252AD Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel, Common Drain Logic Level Gate 35V 5.3A, 5A 35mOhm @ 8A, 10V 3V @ 250µA 18.7nC @ 10V 850pF @ 25V 1.54W -55°C ~ 150°C (TJ) - - Surface Mount TO-252-4L
    ECH8654-TL-H

    ECH8654-TL-H

    MOSFET 2P-CH 20V 5A 8ECH

    onsemi

    129
    RFQ
    ECH8654-TL-H

    Tabla de datos

    - 8-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 5A 38mOhm @ 3A, 4.5V - 11nC @ 4.5V 960pF @ 10V 1.5W 150°C (TJ) - - Surface Mount 8-ECH
    DMC1028UFDB-7

    DMC1028UFDB-7

    MOSFET N/P-CH 12V/20V 6A 6UDFN

    Diodes Incorporated

    4,571
    RFQ
    DMC1028UFDB-7

    Tabla de datos

    - 6-UDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 12V, 20V 6A, 3.4A 25mOhm @ 5.2A, 4.5V 1V @ 250µA 18.5nC @ 8V 787pF @ 6V 1.36W -55°C ~ 150°C (TJ) - - Surface Mount U-DFN2020-6 (Type B)
    QH8KC5TCR

    QH8KC5TCR

    MOSFET 2N-CH 60V 3A TSMT8

    Rohm Semiconductor

    157
    RFQ
    QH8KC5TCR

    Tabla de datos

    - 8-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 3A (Ta) 90mOhm @ 3A, 10V 2.5V @ 1mA 3.1nC @ 10V 135pF @ 30V 1.1W (Ta) 150°C (TJ) - - Surface Mount TSMT8
    UT6JA3TCR

    UT6JA3TCR

    MOSFET 2P-CH 20V 5A HUML2020L8

    Rohm Semiconductor

    2,224
    RFQ
    UT6JA3TCR

    Tabla de datos

    - 6-PowerUDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 20V 5A (Ta) 59mOhm @ 5A, 4.5V 1.5V @ 1mA 6.5nC @ 4.5V 460pF @ 10V 2W (Ta) 150°C (TJ) - - Surface Mount HUML2020L8
    DMP2060UFDB-7

    DMP2060UFDB-7

    MOSFET 2P-CH 20V 3.2A 6UDFN

    Diodes Incorporated

    2,075
    RFQ
    DMP2060UFDB-7

    Tabla de datos

    - 6-UDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 20V 3.2A 90mOhm @ 2.9A, 4.5V 1.4V @ 250µA 18nC @ 8V 881pF @ 10V 1.4W -55°C ~ 150°C (TJ) - - Surface Mount U-DFN2020-6 (Type B)
    UT6JC5TCR

    UT6JC5TCR

    MOSFET 2P-CH 60V 2.5A HUML2020L8

    Rohm Semiconductor

    1,106
    RFQ
    UT6JC5TCR

    Tabla de datos

    - 6-PowerUDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 60V 2.5A (Ta) 280mOhm @ 2.5A, 10V 2.5V @ 1mA 6.3nC @ 10V 265pF @ 30V 2W (Ta) 150°C (TJ) - - Surface Mount HUML2020L8
    HS8K1TB

    HS8K1TB

    MOSFET 2N-CH 30V 10A HSML3030L10

    Rohm Semiconductor

    9,651
    RFQ
    HS8K1TB

    Tabla de datos

    - 8-UDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 10A (Ta), 11A (Ta) 14.6mOhm @ 10A, 10V, 11.8mOhm @ 11A, 10V 2.5V @ 1mA 6nC @ 10V, 7.4nC @ 10V 348pF @ 15V, 429pF @ 15V 2W (Ta) 150°C (TJ) - - Surface Mount HSML3030L10
    DMT3011LDT-7

    DMT3011LDT-7

    MOSFET 2N-CH 30V 8A/10.7A 8VDFN

    Diodes Incorporated

    8,153
    RFQ
    DMT3011LDT-7

    Tabla de datos

    - 8-VDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical - 30V 8A, 10.7A 20mOhm @ 6A, 10V 3V @ 250µA 13.2nC @ 10V 641pF @ 15V 1.9W -55°C ~ 155°C (TJ) - - Surface Mount V-DFN3030-8 (Type K)
    EFC6601R-TR

    EFC6601R-TR

    MOSFET 2N-CH EFCP2718

    onsemi

    5,000
    RFQ
    EFC6601R-TR

    Tabla de datos

    - 6-XFBGA, FCBGA Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 2.5V Drive - - - - 48nC @ 4.5V - 2W 150°C (TJ) - - Surface Mount EFCP2718-6CE-020
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