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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    BUK9K35-60RAX

    BUK9K35-60RAX

    MOSFET 2N-CH 60V 22A LFPAK56D

    Nexperia USA Inc.

    2,521
    RFQ
    BUK9K35-60RAX

    Tabla de datos

    - SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 22A (Ta) 32mOhm @ 5A, 10V 2.1V @ 1mA 7.8nC @ 5V 1081pF @ 25V 38W (Ta) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56D
    SIZ926DT-T1-GE3

    SIZ926DT-T1-GE3

    MOSFET 2N-CH 25V 40A 8POWERPAIR

    Vishay Siliconix

    2,500
    RFQ
    SIZ926DT-T1-GE3

    Tabla de datos

    TrenchFET® Gen IV 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 25V 40A (Tc), 60A (Tc) 4.8mOhm @ 5A, 10V, 2.2mOhm @ 8A, 10V 2.2V @ 250µA 19nC @ 10V, 41nC @ 10V 925pF @ 10V, 2150pF @ 10V 20.2W, 40W -55°C ~ 150°C (TJ) - - Surface Mount 8-PowerPair® (6x5)
    SQJB60EP-T1_BE3

    SQJB60EP-T1_BE3

    MOSFET 2N-CH 60V 30A PPAK SO8

    Vishay Siliconix

    4,430
    RFQ
    SQJB60EP-T1_BE3

    Tabla de datos

    TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 30A (Tc) 12mOhm @ 10A, 10V 2.5V @ 250µA 30nC @ 10V 1600pF @ 25V 48W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8 Dual Asymmetric
    SIZ256DT-T1-GE3

    SIZ256DT-T1-GE3

    MOSFET 2N-CH 70V 11.5A 8PWRPAIR

    Vishay Siliconix

    3,000
    RFQ
    SIZ256DT-T1-GE3

    Tabla de datos

    TrenchFET® Gen IV 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 70V 11.5A (Ta), 31.8A (Tc) 17.6mOhm @ 7A, 4.5V 1.5V @ 250µA 27nC @ 10V 1060pF @ 35V 4.3W (Ta), 33W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PowerPair® (3.3x3.3)
    SQJ202EP-T2_GE3

    SQJ202EP-T2_GE3

    MOSFET 2N-CH 12V 20A PPAK SO8

    Vishay Siliconix

    9,000
    RFQ
    SQJ202EP-T2_GE3

    Tabla de datos

    TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 12V 20A (Tc), 60A (Tc) 6.5mOhm @ 15A, 10V, 3.3mOhm @ 20A, 10V 2V @ 250µA 22nC @ 10V, 54nC @ 10V 975pF @ 6V, 2525pF @ 6V 27W (Tc), 48W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8 Dual Asymmetric
    TQM150NB04DCR RLG

    TQM150NB04DCR RLG

    MOSFET 2N-CH 40V 9A 8PDFNU

    Taiwan Semiconductor Corporation

    1,670
    RFQ
    TQM150NB04DCR RLG

    Tabla de datos

    - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 9A (Ta), 39A (Tc) 15mOhm @ 9A, 10V 4V @ 250µA 18nC @ 10V 1135pF @ 20V 2.4W (Ta), 48W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount, Wettable Flank 8-PDFNU (5x6)
    IPG20N06S2L35ATMA1

    IPG20N06S2L35ATMA1

    MOSFET 2N-CH 55V 20A 8TDSON

    Infineon Technologies

    14,440
    RFQ
    IPG20N06S2L35ATMA1

    Tabla de datos

    OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 55V 20A 35mOhm @ 15A, 10V 2V @ 27µA 23nC @ 10V 790pF @ 25V 65W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TDSON-8-4
    NTMFD020N06CT1G

    NTMFD020N06CT1G

    MOSFET 2N-CH 60V 8A 8DFN

    onsemi

    1,270
    RFQ
    NTMFD020N06CT1G

    Tabla de datos

    - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 8A (Ta), 27A (Tc) 20.3mOhm @ 4A, 10V 4V @ 20µA 5.8nC @ 10V 355pF @ 30V 3.1W (Ta), 31W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
    NTMFD2D4N03P8

    NTMFD2D4N03P8

    MOSFET 2N-CH 30V 17A 8PQFN

    onsemi

    9,000
    RFQ
    NTMFD2D4N03P8

    Tabla de datos

    - 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical - 30V 17A (Ta), 56A (Tc), 25A (Ta), 84A (Tc) 5mOhm @ 17A, 10V, 2.4mOhm @ 25A, 10V 3V @ 250µA, 3V @ 1mA 24nC @ 10V, 55nC @ 10V 1715pF @ 15V, 3825pF @ 15V 1W (Ta), 23W (Tc), 1.1W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
    SIRB40DP-T1-GE3

    SIRB40DP-T1-GE3

    MOSFET 2N-CH 40V 40A PPAK SO8

    Vishay Siliconix

    9,000
    RFQ
    SIRB40DP-T1-GE3

    Tabla de datos

    TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 40A (Tc) 3.25mOhm @ 10A, 10V 2.4V @ 250µA 45nC @ 4.5V 4290pF @ 20V 46.2W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8 Dual
    SQJ990EP-T1_GE3

    SQJ990EP-T1_GE3

    MOSFET 2N-CH 100V 34A PPAK SO8

    Vishay Siliconix

    8,975
    RFQ
    SQJ990EP-T1_GE3

    Tabla de datos

    TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 100V 34A (Tc) 40mOhm @ 6A, 10V, 19mOhm @ 10A, 10V 2.5V @ 250µA 30nC @ 10V, 15nC @ 10V 1390pF @ 25V, 650pF @ 25V 48W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8 Dual Asymmetric
    PSMN013-40VLDX

    PSMN013-40VLDX

    MOSFET 2N-CH 40V 42A LFPAK56D

    Nexperia USA Inc.

    5,933
    RFQ
    PSMN013-40VLDX

    Tabla de datos

    - SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 40V 42A (Ta) 13.6mOhm @ 10A, 10V 2.2V @ 1mA 19.4nC @ 10V 1160pF @ 25V 46W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56D
    TQM250NB06DCR RLG

    TQM250NB06DCR RLG

    MOSFET 2N-CH 60V 6A 8PDFNU

    Taiwan Semiconductor Corporation

    7,395
    RFQ
    TQM250NB06DCR RLG

    Tabla de datos

    - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 6A (Ta), 30A (Tc) 25mOhm @ 6A, 10V 3.8V @ 250µA 24nC @ 10V 1398pF @ 30V 2.5W (Ta), 58W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 8-PDFNU (5x6)
    IPG20N06S2L35AATMA1

    IPG20N06S2L35AATMA1

    MOSFET 2N-CH 55V 20A 8TDSON

    Infineon Technologies

    14,700
    RFQ
    IPG20N06S2L35AATMA1

    Tabla de datos

    OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 55V 20A (Tc) 35mOhm @ 15A, 10V 2V @ 27µA 23nC @ 10V 790pF @ 25V 65W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PG-TDSON-8-10
    IPG20N10S4L35AATMA1

    IPG20N10S4L35AATMA1

    MOSFET 2N-CH 100V 20A 8TDSON

    Infineon Technologies

    3,095
    RFQ
    IPG20N10S4L35AATMA1

    Tabla de datos

    OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 100V 20A 35mOhm @ 17A, 10V 2.1V @ 16µA 17.4nC @ 10V 1105pF @ 25V 43W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PG-TDSON-8-10
    BUK9K13-40HX

    BUK9K13-40HX

    MOSFET 2N-CH 40V 42A LFPAK56D

    Nexperia USA Inc.

    2,965
    RFQ
    BUK9K13-40HX

    Tabla de datos

    TrenchMOS™ SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 40V 42A (Ta) 13.6mOhm @ 10A, 10V 2.2V @ 1mA 19.4nC @ 10V 1160pF @ 25V 46W (Ta) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56D
    SH8KA2GZETB

    SH8KA2GZETB

    MOSFET 2N-CH 30V 8A 8SOP

    Rohm Semiconductor

    2,503
    RFQ
    SH8KA2GZETB

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Not For New Designs - 2 N-Channel (Dual) - 30V 8A 28mOhm @ 8A, 10V 2.5V @ 1mA 8nC @ 10V 330pF @ 15V 2.8W 150°C (TJ) - - Surface Mount 8-SOP
    CSD87384MT

    CSD87384MT

    MOSFET 2N-CH 30V 30A 5PTAB

    Texas Instruments

    807
    RFQ
    CSD87384MT

    Tabla de datos

    NexFET™ 5-LGA Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) Logic Level Gate 30V 30A 7.7mOhm @ 25A, 8V 1.9V @ 250µA 9.2nC @ 4.5V 1150pF @ 15V 8W -55°C ~ 150°C (TJ) - - Surface Mount 5-PTAB (5x3.5)
    CSD87351Q5D

    CSD87351Q5D

    MOSFET 2N-CH 30V 32A 8LSON

    Texas Instruments

    11,661
    RFQ
    CSD87351Q5D

    Tabla de datos

    NexFET™ 8-PowerLDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 32A 7.6mOhm @ 20A, 8V 2.1V @ 250µA 7.7nC @ 4.5V 1255pF @ 15V 12W -55°C ~ 150°C (TJ) - - Surface Mount 8-LSON (5x6)
    SQJ940EP-T1_GE3

    SQJ940EP-T1_GE3

    MOSFET 2N-CH 40V 15A PPAK SO8

    Vishay Siliconix

    8,349
    RFQ
    SQJ940EP-T1_GE3

    Tabla de datos

    TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 40V 15A (Ta), 18A (Tc) 16mOhm @ 15A, 10V 2.5V @ 250µA 20nC @ 20V 896pF @ 20V 48W, 43W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8 Dual Asymmetric
    Total 5737 Record«Prev1... 5556575859606162...287Next»
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