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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    SQJQ906EL-T1_GE3

    SQJQ906EL-T1_GE3

    MOSFET 2N-CH 40V 160A PPAK8X8

    Vishay Siliconix

    1,798
    RFQ
    SQJQ906EL-T1_GE3

    Tabla de datos

    TrenchFET® PowerPAK® 8 x 8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 160A (Tc) 4.3mOhm @ 5A, 10V 2.5V @ 250µA 45nC @ 10V 3238pF @ 20V 187W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® 8 x 8 Dual
    SQJQ980EL-T1_GE3

    SQJQ980EL-T1_GE3

    MOSFET 2N-CH 80V 36A PPAK8X8

    Vishay Siliconix

    5,492
    RFQ
    SQJQ980EL-T1_GE3

    Tabla de datos

    TrenchFET® PowerPAK® 8 x 8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 80V 36A (Tc) 13.5mOhm @ 5A, 10V 2.5V @ 250µA 36nC @ 10V 1995pF @ 40V 187W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® 8 x 8 Dual
    SQJQ906E-T1_GE3

    SQJQ906E-T1_GE3

    MOSFET 2N-CH 40V 95A PPAK8X8

    Vishay Siliconix

    1,375
    RFQ
    SQJQ906E-T1_GE3

    Tabla de datos

    TrenchFET® PowerPAK® 8 x 8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 95A (Tc) 3.3mOhm @ 5A, 10V 3.5V @ 250µA 42nC @ 10V 3600pF @ 20V 50W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® 8 x 8 Dual
    NVMJD3D0N04CTWG

    NVMJD3D0N04CTWG

    MOSFET N-CH 40V LFPACK57

    onsemi

    5,314
    RFQ
    NVMJD3D0N04CTWG

    Tabla de datos

    - - Tape & Reel (TR) Active - - - - - - - - - - - - - - -
    NTMFD1D1N02X

    NTMFD1D1N02X

    MOSFET 2N-CH 25V 14A 8PQFN

    onsemi

    5,890
    RFQ
    NTMFD1D1N02X

    Tabla de datos

    POWERTRENCH® 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 25V 14A (Ta), 75A (Tc), 27A (Ta), 178A (Tc) 3mOhm @ 20A, 10V, 0.87mOhm @ 37A, 10V 2.1V @ 240µA, 2.1V @ 850µA 15nC @ 10V, 59nC @ 10V 1080pF @ 12V, 4265pF @ 12V 960mW (Ta), 27W (Tc), 1W (Ta), 44W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
    NVMFD5C668NLT1G

    NVMFD5C668NLT1G

    MOSFET 2N-CH 60V 15.5A 8DFN

    onsemi

    1,094
    RFQ
    NVMFD5C668NLT1G

    Tabla de datos

    - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 15.5A (Ta), 68A (Tc) 6.5mOhm @ 20A, 10V 2V @ 50µA 21.3nC @ 10V 1440pF @ 25V 3W (Ta), 57.5W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
    FDPC8011S

    FDPC8011S

    MOSFET 2N-CH 25V 13A PWRCLIP-33

    onsemi

    1,964
    RFQ
    FDPC8011S

    Tabla de datos

    PowerTrench® 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical - 25V 13A (Ta), 20A (Tc), 27A (Ta), 60A (Tc) 6mOhm @ 13A, 10V, 1.8mOhm @ 27A, 10V 2.2V @ 250µA, 2.2V @ 1mA 19nC @ 10V, 64nC @ 10V 1240pF @ 13V, 4335pF @ 13V 800mW (Ta), 900mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount Powerclip-33
    SI7994DP-T1-GE3

    SI7994DP-T1-GE3

    MOSFET 2N-CH 30V 60A PPAK SO8

    Vishay Siliconix

    3,713
    RFQ
    SI7994DP-T1-GE3

    Tabla de datos

    TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 60A 5.6mOhm @ 20A, 10V 3V @ 250µA 80nC @ 10V 3500pF @ 15V 46W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8 Dual
    NVMFD5C446NLT1G

    NVMFD5C446NLT1G

    MOSFET 2N-CH 40V 25A 8DFN

    onsemi

    698
    RFQ
    NVMFD5C446NLT1G

    Tabla de datos

    - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 25A (Ta), 145A (Tc) 2.65mOhm @ 20A, 10V 2.2V @ 90µA 25nC @ 4.5V 3170pF @ 25V 3.5W (Ta) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
    FDMC8097AC

    FDMC8097AC

    MOSFET N/P-CH 150V 2.4A 8PWR33

    onsemi

    4,213
    RFQ
    FDMC8097AC

    Tabla de datos

    PowerTrench® 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 150V 2.4A (Ta), 900mA (Tc) 155mOhm @ 2.4A, 10V 4V @ 250µA 6.2nC @ 10V 395pF @ 75V, 230pF @ 75V 1.9W -55°C ~ 150°C (TJ) - - Surface Mount 8-Power33 (3x3)
    CSD88599Q5DCT

    CSD88599Q5DCT

    MOSFET 2N-CH 60V 22VSON-CLIP

    Texas Instruments

    241
    RFQ
    CSD88599Q5DCT

    Tabla de datos

    NexFET™ 22-PowerTFDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 60V - 2.1mOhm @ 30A, 10V 2.5V @ 250µA 27nC @ 4.5V 4840pF @ 30V 12W -55°C ~ 150°C (TJ) - - Surface Mount 22-VSON-CLIP (5x6)
    TC1550TG-G

    TC1550TG-G

    MOSFET N/P-CH 500V 8SOIC

    Microchip Technology

    3,803
    RFQ
    TC1550TG-G

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 500V - 60Ohm @ 50mA, 10V 4V @ 1mA - 55pF @ 25V, 70pF @ 25V - -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    SLA5086

    SLA5086

    MOSFET 5P-CH 60V 5A 12SIP

    Sanken Electric USA Inc.

    161
    RFQ
    SLA5086

    Tabla de datos

    - 12-SIP Exposed Tab Tube Not For New Designs MOSFET (Metal Oxide) 5 P-Channel, Common Source Logic Level Gate 60V 5A 220mOhm @ 3A, 10V 2V @ 250µA - 790pF @ 10V 5W 150°C (TJ) - - Through Hole 12-SIP
    EPC2102

    EPC2102

    MOSFET 2N-CH 60V 23A DIE

    EPC

    3,505
    RFQ
    EPC2102

    Tabla de datos

    eGaN® Die Tape & Reel (TR) Active GaNFET (Gallium Nitride) 2 N-Channel (Half Bridge) - 60V 23A 4.4mOhm @ 20A, 5V 2.5V @ 7mA 6.8nC @ 5V 830pF @ 30V - -40°C ~ 150°C (TJ) - - Surface Mount Die
    EPC2105

    EPC2105

    MOSFET 2N-CH 80V 9.5A/38A DIE

    EPC

    1,410
    RFQ
    EPC2105

    Tabla de datos

    eGaN® Die Tape & Reel (TR) Active GaNFET (Gallium Nitride) 2 N-Channel (Half Bridge) - 80V 9.5A, 38A 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V 2.5V @ 2.5mA, 2.5V @ 10mA 2.5nC @ 5V, 10nC @ 5V 300pF @ 40V, 1100pF @ 40V - -40°C ~ 150°C (TJ) - - Surface Mount Die
    EPC2101

    EPC2101

    MOSFET 2N-CH 60V 9.5A/38A DIE

    EPC

    469
    RFQ
    EPC2101

    Tabla de datos

    eGaN® Die Tape & Reel (TR) Active GaNFET (Gallium Nitride) 2 N-Channel (Half Bridge) - 60V 9.5A, 38A 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V 2.5V @ 3mA, 2.5V @ 12mA 2.7nC @ 5V, 12nC @ 5V 300pF @ 30V, 1200pF @ 30V - -40°C ~ 150°C (TJ) - - Surface Mount Die
    TC8020K6-G

    TC8020K6-G

    MOSFET 6N/6P-CH 200V 56QFN

    Microchip Technology

    722
    RFQ
    TC8020K6-G

    Tabla de datos

    - 56-VFQFN Exposed Pad Tray Active MOSFET (Metal Oxide) 6 N and 6 P-Channel - 200V - 8Ohm @ 1A, 10V 2.4V @ 1mA - 50pF @ 25V - -55°C ~ 150°C (TJ) - - Surface Mount 56-QFN (8x8)
    SH32N65DM6AG

    SH32N65DM6AG

    MOSFET 2N-CH 650V 32A 9ACEPACK

    STMicroelectronics

    197
    RFQ
    SH32N65DM6AG

    Tabla de datos

    ECOPACK® 9-PowerSMD Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 650V 32A (Tc) 97mOhm @ 23A, 10V 4.75V @ 250µA 47nC @ 10V 2211pF @ 100V 208W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 9-ACEPACK SMIT
    CBB021M12FM3

    CBB021M12FM3

    MOSFET 4N-CH 1200V 105A

    Wolfspeed, Inc.

    43
    RFQ
    CBB021M12FM3

    Tabla de datos

    - Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 105A (Tj) 14mOhm @ 100A, 15V 3.6V @ 35mA 324nC @ 15V 10300pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount -
    CAB006M12GM3

    CAB006M12GM3

    SIC 2N-CH 1200V

    Wolfspeed, Inc.

    52
    RFQ
    CAB006M12GM3

    Tabla de datos

    WolfPACK™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) - 6.9mOhm @ 200A, 15V 3.6V @ 69mA 708nC @ 15V 20400pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount -
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