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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    SP8K32HZGTB

    SP8K32HZGTB

    MOSFET 2N-CH 60V 4.5A 8SOP

    Rohm Semiconductor

    2,126
    RFQ
    SP8K32HZGTB

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 4.5A (Ta) 65mOhm @ 4.5A, 10V 2.5V @ 1mA 10nC @ 5V 500pF @ 10V 2W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
    BSC155N06NDATMA1

    BSC155N06NDATMA1

    MOSFET 2N-CH 60V 20A 8TDSON

    Infineon Technologies

    7,129
    RFQ
    BSC155N06NDATMA1

    Tabla de datos

    OptiMOS™ T2 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 20A (Tc) 15.5mOhm @ 17A, 10V 4V @ 20µA 29nC @ 10V 2250pF @ 30V 50W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TDSON-8-4
    SH8K32GZETB

    SH8K32GZETB

    MOSFET 2N-CH 60V 4.5A 8SOP

    Rohm Semiconductor

    6,426
    RFQ
    SH8K32GZETB

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 4.5A (Ta) 65mOhm @ 4.5A, 10V 2.5V @ 1mA 10nC @ 5V 500pF @ 10V 1.4W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
    SI7923DN-T1-GE3

    SI7923DN-T1-GE3

    MOSFET 2P-CH 30V 4.3A PPAK 1212

    Vishay Siliconix

    32,227
    RFQ
    SI7923DN-T1-GE3

    Tabla de datos

    TrenchFET® PowerPAK® 1212-8 Dual Tape & Reel (TR) Last Time Buy MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 4.3A 47mOhm @ 6.4A, 10V 3V @ 250µA 21nC @ 10V - 1.3W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8 Dual
    BUK7K15-80EX

    BUK7K15-80EX

    MOSFET 2N-CH 80V 23A LFPAK56D

    Nexperia USA Inc.

    5,347
    RFQ
    BUK7K15-80EX

    Tabla de datos

    - SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 80V 23A (Ta) 15mOhm @ 10A, 10V 4V @ 1mA 35.1nC @ 10V 2457pF @ 25V 68W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56D
    SQ4949EY-T1_GE3

    SQ4949EY-T1_GE3

    MOSFET 2P-CH 30V 7.5A 8SOIC

    Vishay Siliconix

    45,729
    RFQ
    SQ4949EY-T1_GE3

    Tabla de datos

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 30V 7.5A (Tc) 35mOhm @ 5.9A, 10V 2.5V @ 250µA 30nC @ 10V 1020pF @ 25V 3.3W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-SOIC
    SQJ264EP-T1_GE3

    SQJ264EP-T1_GE3

    MOSFET 2N-CH 60V 20A PPAK SO8

    Vishay Siliconix

    4,797
    RFQ
    SQJ264EP-T1_GE3

    Tabla de datos

    TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical - 60V 20A (Tc), 54A (Tc) 20mOhm @ 6A, 10V, 8.6mOhm @ 10A, 10V 3.5V @ 250µA 16nC @ 10V, 32nC @ 10V 1000pF @ 25V, 2100pF @ 25V 27W (Tc), 48W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8 Dual Asymmetric
    BUK7K13-60EX

    BUK7K13-60EX

    MOSFET 2N-CH 60V 40A LFPAK56D

    Nexperia USA Inc.

    2,162
    RFQ
    BUK7K13-60EX

    Tabla de datos

    - SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 40A 10mOhm @ 10A, 10V 4V @ 1mA 30.1nC @ 10V 2163pF @ 25V 64W -55°C ~ 175°C (TJ) Automotive AEC-Q100 Surface Mount LFPAK56D
    IPG20N06S4L11ATMA2

    IPG20N06S4L11ATMA2

    MOSFET 2N-CH 60V 20A 8TDSON

    Infineon Technologies

    41,669
    RFQ
    IPG20N06S4L11ATMA2

    Tabla de datos

    OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 20A (Tc) 11.2mOhm @ 17A, 10V 2.2V @ 28µA 53nC @ 10V 4020pF @ 25V 65W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PG-TDSON-8-10
    SQ4284EY-T1_BE3

    SQ4284EY-T1_BE3

    MOSFET 2N-CH 40V 8A 8SOIC

    Vishay Siliconix

    4,201
    RFQ
    SQ4284EY-T1_BE3

    Tabla de datos

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 8A (Tc) 13.5mOhm @ 7A, 10V 2.5V @ 250µA 45nC @ 10V 2200pF @ 25V 3.9W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-SOIC
    NP16N06QLK-E1-AY

    NP16N06QLK-E1-AY

    MOSFET 2N-CH 60V 16A 8HSON

    Renesas Electronics Corporation

    4,125
    RFQ
    NP16N06QLK-E1-AY

    Tabla de datos

    - 8-PowerLDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 16A (Tc) 39mOhm @ 8A, 10V 2.5V @ 250µA 17nC @ 10V 750pF @ 25V 1W (Ta), 25W (Tc) 175°C Automotive AEC-Q101 Surface Mount 8-HSON (5x5.4)
    CSD87355Q5D

    CSD87355Q5D

    MOSFET 2N-CH 30V 8LSON

    Texas Instruments

    2,102
    RFQ
    CSD87355Q5D

    Tabla de datos

    NexFET™ 8-PowerLDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical - 30V - - 1.9V @ 250µA 13.7nC @ 4.5V 1860pF @ 15V 12W -55°C ~ 150°C (TJ) - - Surface Mount 8-LSON (5x6)
    BUK9K22-80EX

    BUK9K22-80EX

    MOSFET 2N-CH 80V 21A LFPAK56D

    Nexperia USA Inc.

    1,174
    RFQ
    BUK9K22-80EX

    Tabla de datos

    - SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 80V 21A (Ta) 19mOhm @ 10A, 10V 2.1V @ 1mA 23.1nC @ 5V 3115pF @ 25V 64W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56D
    BUK7K5R6-30E,115

    BUK7K5R6-30E,115

    MOSFET 2N-CH 30V 40A LFPAK56D

    Nexperia USA Inc.

    2,895
    RFQ
    BUK7K5R6-30E,115

    Tabla de datos

    TrenchMOS™ SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 40A 5.6mOhm @ 25A, 10V 4V @ 1mA 29.7nC @ 10V 1969pF @ 25V 64W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56D
    BUK9K5R6-30EX

    BUK9K5R6-30EX

    MOSFET 2N-CH 30V 40A LFPAK56D

    Nexperia USA Inc.

    1,226
    RFQ
    BUK9K5R6-30EX

    Tabla de datos

    - SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 40A 5.8mOhm @ 10A, 5V 2.1V @ 1mA 22.6nC @ 5V 2480pF @ 25V 64W -55°C ~ 175°C (TJ) Automotive AEC-Q100 Surface Mount LFPAK56D
    UT6KC5TCR

    UT6KC5TCR

    MOSFET 2N-CH 60V 3.5A 8DFN

    Rohm Semiconductor

    1,091
    RFQ
    UT6KC5TCR

    Tabla de datos

    - 8-PowerUDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 3.5A (Ta) 95mOhm @ 3.5A, 10V 2.5V @ 1mA 3.1nC @ 10V 135pF @ 30V 2W (Ta) 150°C (TJ) - - Surface Mount DFN2020-8D
    SI7949DP-T1-E3

    SI7949DP-T1-E3

    MOSFET 2P-CH 60V 3.2A PPAK SO8

    Vishay Siliconix

    9,628
    RFQ
    SI7949DP-T1-E3

    Tabla de datos

    TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 60V 3.2A 64mOhm @ 5A, 10V 3V @ 250µA 40nC @ 10V - 1.5W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8 Dual
    IPG20N10S4L22AATMA1

    IPG20N10S4L22AATMA1

    MOSFET 2N-CH 100V 20A 8TDSON

    Infineon Technologies

    21,565
    RFQ
    IPG20N10S4L22AATMA1

    Tabla de datos

    OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 100V 20A 22mOhm @ 17A, 10V 2.1V @ 25µA 27nC @ 10V 1755pF @ 25V 60W -55°C ~ 175°C (TJ) - - Surface Mount, Wettable Flank PG-TDSON-8-10
    SH8MB5TB1

    SH8MB5TB1

    MOSFET N/P-CH 40V 8.5A 8SOP

    Rohm Semiconductor

    8,392
    RFQ
    SH8MB5TB1

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 40V 8.5A (Ta) 19.4mOhm @ 8.5A, 10V, 16.8mOhm @ 8.5A, 10V 2.5V @ 1mA 10.6nC @ 20V, 51nC @ 20V 530pF @ 20V, 2870pF @ 20V 2W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
    SQ4920EY-T1_BE3

    SQ4920EY-T1_BE3

    MOSFET 2N-CH 30V 8A 8SOIC

    Vishay Siliconix

    1,047
    RFQ
    SQ4920EY-T1_BE3

    Tabla de datos

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 8A (Tc) 14.5mOhm @ 6A, 10V 2.5V @ 250µA 30nC @ 10V 1465pF @ 15V 4.4W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-SOIC
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