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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    ZXMC3A16DN8TA

    ZXMC3A16DN8TA

    MOSFET N/P-CH 30V 4.9A/4.1A 8SO

    Diodes Incorporated

    28,290
    RFQ
    ZXMC3A16DN8TA

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V 4.9A, 4.1A 35mOhm @ 9A, 10V 1V @ 250µA (Min) 17.5nC @ 10V 796pF @ 25V 1.25W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    ZXMC3A16DN8TC

    ZXMC3A16DN8TC

    MOSFET N/P-CH 30V 4.9A/4.1A 8SO

    Diodes Incorporated

    20,377
    RFQ
    ZXMC3A16DN8TC

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V 4.9A, 4.1A 35mOhm @ 9A, 10V 1V @ 250µA (Min) 17.5nC @ 10V 796pF @ 25V 1.25W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    SQJ910AEP-T1_GE3

    SQJ910AEP-T1_GE3

    MOSFET 2N-CH 30V 30A PPAK SO8

    Vishay Siliconix

    5,945
    RFQ
    SQJ910AEP-T1_GE3

    Tabla de datos

    TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 30A (Tc) 7mOhm @ 12A, 10V 2.5V @ 250µA 39nC @ 10V 1869pF @ 15V 48W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8 Dual
    SQJB90EP-T1_GE3

    SQJB90EP-T1_GE3

    MOSFET 2N-CH 80V 30A PPAK SO8

    Vishay Siliconix

    5,710
    RFQ
    SQJB90EP-T1_GE3

    Tabla de datos

    TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 80V 30A (Tc) 21.5mOhm @ 10A, 10V 3.5V @ 250µA 25nC @ 10V 1200pF @ 25V 48W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8 Dual
    SQJ912BEP-T1_GE3

    SQJ912BEP-T1_GE3

    MOSFET 2N-CH 40V 30A PPAK SO8

    Vishay Siliconix

    4,110
    RFQ
    SQJ912BEP-T1_GE3

    Tabla de datos

    TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 30A (Tc) 11mOhm @ 9A, 10V 2V @ 250µA 60nC @ 10V 3000pF @ 25V 48W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8 Dual
    BUK9K45-100E,115

    BUK9K45-100E,115

    MOSFET 2N-CH 100V 21A LFPAK56D

    Nexperia USA Inc.

    2,987
    RFQ
    BUK9K45-100E,115

    Tabla de datos

    TrenchMOS™ SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 100V 21A 42mOhm @ 5A, 10V 2.1V @ 1mA 33.5nC @ 10V 2152pF @ 25V 53W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56D
    BUK7K23-80EX

    BUK7K23-80EX

    MOSFET 2N-CH 80V 17A LFPAK56D

    Nexperia USA Inc.

    2,245
    RFQ
    BUK7K23-80EX

    Tabla de datos

    - SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 80V 17A (Ta) 23mOhm @ 10A, 10V 4V @ 1mA 22.8nC @ 10V 1542pF @ 25V 53W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56D
    IPG20N06S415ATMA2

    IPG20N06S415ATMA2

    MOSFET 2N-CH 60V 20A 8TDSON

    Infineon Technologies

    3,573
    RFQ
    IPG20N06S415ATMA2

    Tabla de datos

    OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 20A 15.5mOhm @ 17A, 10V 4V @ 20µA 29nC @ 10V 2260pF @ 25V 50W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TDSON-8-4
    FDMS3604S

    FDMS3604S

    MOSFET 2N-CH 30V 13A/23A POWER56

    onsemi

    1,464
    RFQ
    FDMS3604S

    Tabla de datos

    PowerTrench® 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical Logic Level Gate 30V 13A, 23A 8mOhm @ 13A, 10V 2.7V @ 250µA 29nC @ 10V 1785pF @ 15V 1W -55°C ~ 150°C (TJ) - - Surface Mount Power56
    SQJ504EP-T1_BE3

    SQJ504EP-T1_BE3

    MOSFET N/P-CH 40V 30A PPAK SO8

    Vishay Siliconix

    8,816
    RFQ
    SQJ504EP-T1_BE3

    Tabla de datos

    TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 40V 30A (Tc) 7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V 2.5V @ 250µA 30nC @ 10V, 85nC @ 10V 1900pF @ 25V, 4600pF @ 25V 34W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8 Dual
    BUK9K17-60EX

    BUK9K17-60EX

    MOSFET 2N-CH 60V 26A LFPAK56D

    Nexperia USA Inc.

    272
    RFQ
    BUK9K17-60EX

    Tabla de datos

    - SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 26A 15.6mOhm @ 10A, 10V 2.1V @ 1mA 16.5nC @ 5V 2223pF @ 25V 53W -55°C ~ 175°C (TJ) Automotive AEC-Q100 Surface Mount LFPAK56D
    IPG20N06S4L14AATMA1

    IPG20N06S4L14AATMA1

    MOSFET 2N-CH 60V 20A 8TDSON

    Infineon Technologies

    29,812
    RFQ
    IPG20N06S4L14AATMA1

    Tabla de datos

    OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 20A 13.7mOhm @ 17A, 10V 2.2V @ 20µA 39nC @ 10V 2890pF @ 25V 50W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PG-TDSON-8-10
    BUK9K8R7-40EX

    BUK9K8R7-40EX

    MOSFET 2N-CH 40V 30A LFPAK56D

    Nexperia USA Inc.

    6,730
    RFQ
    BUK9K8R7-40EX

    Tabla de datos

    TrenchMOS™ SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 40V 30A 8mOhm @ 10A, 10V 2.1V @ 1mA 15.7nC @ 5V 2110pF @ 25V 53W -55°C ~ 175°C (TJ) Automotive AEC-Q100 Surface Mount LFPAK56D
    CSD87312Q3E

    CSD87312Q3E

    MOSFET 2N-CH 30V 27A 8VSON

    Texas Instruments

    1,320
    RFQ
    CSD87312Q3E

    Tabla de datos

    NexFET™ 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Source Logic Level Gate 30V 27A 33mOhm @ 7A , 8V 1.3V @ 250µA 8.2nC @ 4.5V 1250pF @ 15V 2.5W -55°C ~ 150°C (TJ) - - Surface Mount 8-VSON (3.3x3.3)
    FDZ1323NZ

    FDZ1323NZ

    MOSFET 2N-CH 20V 10A 6WLCSP

    onsemi

    14,617
    RFQ
    FDZ1323NZ

    Tabla de datos

    PowerTrench® 6-XFBGA, WLCSP Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain Logic Level Gate 20V 10A 13mOhm @ 1A, 4.5V 1.2V @ 250µA 24nC @ 10V 2055pF @ 10V 500mW -55°C ~ 150°C (TJ) - - Surface Mount 6-WLCSP (1.3x2.3)
    SQJ204EP-T1_GE3

    SQJ204EP-T1_GE3

    MOSFET 2N-CH 12V 20A PPAK SO8

    Vishay Siliconix

    8,490
    RFQ
    SQJ204EP-T1_GE3

    Tabla de datos

    TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical - 12V 20A (Tc), 60A (Tc) 8.3mOhm @ 4A, 10V, 3mOhm @ 10A, 10V 1.5V @ 250µA 20nC @ 10V, 50nC @ 10V 1400pF @ 6V, 3700pF @ 6V 27W (Tc), 48W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8 Dual Asymmetric
    FDMS7620S

    FDMS7620S

    MOSFET 2N-CH 30V 10.1A POWER56

    onsemi

    5,245
    RFQ
    FDMS7620S

    Tabla de datos

    PowerTrench® 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 10.1A, 12.4A 20mOhm @ 10.1A, 10V 3V @ 250µA 11nC @ 10V 608pF @ 15V 1W -55°C ~ 150°C (TJ) - - Surface Mount Power56
    SQJ244EP-T1_GE3

    SQJ244EP-T1_GE3

    MOSFET 2N-CH 40V 20A PPAK SO8

    Vishay Siliconix

    3,911
    RFQ
    SQJ244EP-T1_GE3

    Tabla de datos

    TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical - 40V 20A (Tc), 60A (Tc) 11mOhm @ 4A, 10V, 4.5mOhm @ 10A, 10V 2.5V @ 250µA 20nC @ 10V, 45nC @ 10V 1200pF @ 25V, 2800pF @ 25V 27W (Tc), 48W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8 Dual Asymmetric
    FDMS7602S

    FDMS7602S

    MOSFET 2N-CH 30V 12A/17A POWER56

    onsemi

    9,430
    RFQ
    FDMS7602S

    Tabla de datos

    PowerTrench® 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 12A, 17A 7.5mOhm @ 12A, 10V 3V @ 250µA 28nC @ 10V 1750pF @ 15V 1W -55°C ~ 150°C (TJ) - - Surface Mount Power56
    SP8K31HZGTB

    SP8K31HZGTB

    MOSFET 2N-CH 60V 3.5A 8SOP

    Rohm Semiconductor

    4,880
    RFQ
    SP8K31HZGTB

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 3.5A (Ta) 120mOhm @ 3.5A, 10V 2.5V @ 1mA 5.2nC @ 5V 250pF @ 10V 2W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
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